Method for welding target material and back board

A welding method and backplane technology, which are applied in welding media, welding equipment, welding/welding/cutting items, etc., can solve the problems of affecting the welding effect of target components and easy oxidation of tantalum targets.

Inactive Publication Date: 2009-09-30
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a welding method of the target and the back plate, which solves the problem that the tantalum target

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for welding target material and back board
  • Method for welding target material and back board
  • Method for welding target material and back board

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The following are the process steps and welding results of brazing the 99.99% high-purity Ta target and the 6061Al alloy back plate:

[0038] (1) Surface processing of the target material and the back plate: Machining the surface of the Ta target and the surface of the 6061Al alloy back plate to make them bright, and the smoothness reaches 0.2-1.6um.

[0039] (2) Chemical cleaning of the target material and the back plate: the Ta target is first cleaned with an acid solution, and then cleaned with an organic solvent; and the 6061Al alloy back plate is directly cleaned with an organic solvent. The acid solution used for cleaning can be hydrofluoric acid (HF) and nitric acid (HNO 3 ), the mixed solvent of hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the mixed solvent, the proportion of hydrofluoric acid is 3% to 15%, and the proportion of nitric acid can be 85% to 97%; preferably, HF:HNO 3 The matching ratio is 1:3. In addition, the acid solution can also be made...

Embodiment 2

[0048] The following are the process steps and welding results of brazing the 99.995% high-purity Ta target and the brass back plate:

[0049] (1) Surface processing of the target material and the back plate: Machining the surface of the Ta target and the surface of the brass back plate to make them bright, and the smoothness reaches 0.2-1.6um.

[0050] (2) Chemical cleaning of the target material and the back plate: the Ta target is first cleaned with an acid solution, and then cleaned with an organic solvent; and the brass back plate is directly cleaned with an organic solvent. The acid solution used for cleaning can be hydrofluoric acid (HF) and nitric acid (HNO 3 ), the mixed solvent of hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the mixed solvent, the proportion of hydrofluoric acid is 3% to 15%, and the proportion of nitric acid can be 85% to 97%; preferably, HF:HNO 3 The matching ratio is 1:3. In addition, the acid solution can also be made of hydrofluoric aci...

Embodiment 3

[0059] The following are the process steps and results of brazing the 99.99% high-purity Ta target and the oxygen-free copper backplane:

[0060] (1) Surface processing of target material and back plate: machine the surface of Ta target and oxygen-free copper back plate to make them bright, and the smoothness reaches 0.2-3.2um.

[0061] (2) Chemical cleaning of the target material and the backplane: the Ta target is first cleaned with an acid solution, and then cleaned with an organic solvent; and the oxygen-free copper backplane is directly cleaned with an organic solvent. The acid solution used for cleaning can be hydrofluoric acid (HF) and nitric acid (HNO 3 ), the mixed solvent of hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the mixed solvent, the proportion of hydrofluoric acid is 3% to 15%, and the proportion of nitric acid can be 85% to 97%; preferably, HF:HNO 3 The matching ratio is 1:3. In addition, the acid solution can also be made of hydrofluoric acid (HF)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method for welding a target material and a back board includes a step of providing a tantalum target material and a back board; a step of adding solder on a welding surface of the back board; a step of forming a metal central layer on a welding surface containing the tantalum target material in vacuum; a step of implementing thermal insulation and heat diffusion treatment; and a step of cooling the target material component, and removing the redundant solder through a mechanical treatment. By means of implementing a large area welding in a vacuum circumstance, the method of the invention is capable of preventing a metallic welding surface from being oxidized, is favorable to infiltrate the solder and the metal, the bonding strength between the tantalum target material and the back board is improved, thereby the abjunction of the tantalum target material is avoided from the back board during a sputtering process, and a sputter coating may be implemented normally.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method of a target material and a back plate. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. At present, metal tantalum (Ta) is mainly used as a target material to be coated by physical vapor deposition (PVD) and a barrier layer is formed, and magnetron sputtering is used in the sputtering process; High copper or aluminum material is used as the backplane material. [0003] The high-purity tantalum target and the back plate of copper or aluminum alloy are processed and welded to form the target components used in the semiconductor industry, and then...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B23K1/00B23K35/30B23K35/28B23K35/26B23K35/24B23K1/20C23G1/10C23G5/02C23C14/34B23K103/08B23K103/18B23K103/12B23K103/10
Inventor 姚力军潘杰陈勇军刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap