Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd
A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve good reproducibility
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Embodiment 1
[0059] The content of hydrogen used is 1.17×10 -3 atomic % C 5 F 8 The gas was used as a raw material gas, and plasma treatment was performed using the above-mentioned plasma film forming apparatus, and a carbon fluoride film of 500 nm was formed on two bare silicon substrates. The hydrogen content is a value obtained by calculation from the water content. The content of water was determined by mass analysis, and the value was 0.5 ppm by weight. Process conditions such as flow rate and electric power are as described above.
[0060] One silicon substrate was heated at a temperature increase rate of 10°C / min in a vacuum atmosphere container, the weight was measured with an electronic balance, and the weight loss at each temperature was obtained in the range of room temperature to 425°C. The result is as Image 6 shown by the solid line a.
[0061] In addition, with respect to another silicon substrate, the hydrogen concentration in the carbon fluoride film was investigate...
Embodiment 2
[0113] Under a nitrogen stream, 30 parts of potassium fluoride and 47 parts of N,N-dimethylformamide were charged into a four-necked flask equipped with a dropping funnel, a distillation column, a thermometer and a stirring device. A -20°C cold medium was flowed into a Dimroth condenser provided at the top of the rectification column, and a fraction trap was provided on the atmospheric open line of the rectification column, and the temperature in the flask was raised to 135°C over 0.5 hours.
[0114] After the temperature in the flask reached 135°C, 50.2 parts of 1,2-dichloro-3,3,4,4,5,5-hexafluorocyclopentene was added dropwise from the dropping funnel at a rate of 17.1 parts / hour to start the reaction. . When 1.5 hours passed from the start of the reaction, it was confirmed that the temperature at the top of the column was stable at the boiling point (27°C) of the product, and the extraction of the fraction was started. After 3 hours from the extraction of the fraction, the...
Embodiment 3
[0119] Into a Hastelloy autoclave were charged 394 parts of commercially available pelletized potassium hydroxide (85% grade), and 1,1,1,2,3,4,4,5,5,5-decafluoropentane ( Du Pont-Mitsui Fluorochemical Co., Ltd.) 300 parts. The contents were sufficiently stirred and allowed to react at 200°C for 7.5 hours. After cooling the autoclave, the trap and vacuum pump were connected. Then, the vacuum pump was operated to depressurize the autoclave to distill off the reaction mixture, which was then trapped in a trap cooled with liquid ammonia. The catch yield was 182.5 parts. The collected product was analyzed by GC analysis and found to contain octafluoro-2-pentyne, 1,1,1,2,4,5,5,5-nonafluoro-2-pentene (hereinafter abbreviated as "reaction intermediate"). body A"), 1,1,1,3,4,5,5,5-nonafluoro-2-pentene (hereinafter referred to as "reaction intermediate B"), 1,1,1,2,3, 4,4,5,5,5-Decafluoropentane. Based on the charged raw materials, the yield of the target compound was 20.6%, and th...
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