Novel red electroluminescent compounds and organic electroluminescent device using the same
A compound, organophosphorus technology, applied in the field of red phosphorescent compounds and organic electroluminescent devices
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preparation Embodiment 1
[0120] Preparation of Example 1-compound (11)
[0121]
[0122] Preparation of compound (A)
[0123] In an aqueous solution of hydrogen bromide (48% aq. HBr) (60 ml), 6-aminoquinoline (20.0 g, 138.7 mmol) was dissolved, and the solution was cooled to -10°C. After adding thereto an aqueous solution of sodium nitrate (10.9 g in 100 ml of water) (158.1 mmol), the reaction mixture was stirred at 0° C. for 10 minutes. To the mixture was added a solution of copper bromide (23.1 g, 160.9 mmol) dissolved in 240 mL of water and 65 mL of aqueous hydrogen bromide. The resulting mixture was stirred and heated at 60°C for 30 minutes. When the reaction was completed, the mixture was cooled to room temperature, and ice water was added thereto. After adjusting the pH to about 10 by using aqueous sodium hydroxide solution (4M), the mixture was extracted with ethyl acetate, and the extract was filtered under reduced pressure. Compound (A) (18.2 g, 87.4 mmol) was obtained by purificatio...
Embodiment 1
[0246] The manufacture of embodiment 1-OLED (1)
[0247] OLED devices were fabricated by using the red phosphorescent compounds according to the invention.
[0248] First, an ITO transparent electrode film (15 Ω / □) (2) made of glass for OLED (1) (manufactured by Samsung Corning) was ultrasonically washed with trichloroethylene, acetone, ethanol, and distilled water in sequence, and washed in Store in isopropanol until use.
[0249] Then, the ITO substrate was installed on the substrate folder (substrate folder) of the vacuum vapor deposition device, and 4,4',4"-tris(N,N-(2-naphthyl)-phenylamino)tri Aniline (2-TNATA) is placed in the unit (cell) of vacuum vapor deposition device, then it is ventilated to 10 in the chamber -6 Hold the vacuum. Application of current to the cell evaporated the 2-TNATA, thus providing vapor deposition of a 60 nm thick hole injection layer (3) on the ITO substrate.
[0250]
[0251] 2-TNATA
[0252] Then, N, N'-bis(α-naphthyl)-N, N'-diphenyl...
Embodiment 2
[0260] The manufacture of embodiment 2-OLED (2)
[0261] The hole injection layer and the hole transport layer were formed according to the steps of Example 1, and the electroluminescence layer was vapor-deposited as follows. Another unit of the vacuum vapor deposition device was charged with H-4 as the electroluminescent host material, and the red phosphorescent compound (compound 12) according to the present invention was still charged in another unit. The two materials are doped by evaporation at different speeds to vapor-deposit an electroluminescent layer (5) with a thickness of 30 nm on the hole transport layer. A suitable doping concentration is 4-10 mol% based on the host material. Then, following the same procedure as in Example 1, a hole blocking layer, an electron transport layer, and an electron injection layer were vapor-deposited, and thereafter an OLED was manufactured by vapor-depositing an Al cathode (8) to a thickness of 150 nm using another vacuum vapor dep...
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