Quasi-planar high-speed bicolor InGaAs photoelectric detector and manufacturing method thereof

Abstract

The invention belongs to the field of semiconductor photoelectric devices, in particular to a quasi-planar high-speed bicolor InGaAs photoelectric detector and a manufacturing method thereof, and the method adopts a quasi-planar structure, namely adopts the planar diffusion technology for realizing the function of a PN junction and combines with the lithography technology and the mesa etching technology, thereby realizing the quasi-planar structure which wraps the PN junction in a mesa and simultaneously producing a pressure-welding point on a semi-insulating substrate below the mesa. The device prepared by adopting the method is compatible with the features of small dark current, high reliability and the like of the planar diffusion technology and the advantages of large photosensitive surface, small parasitic capacitance, high transmission rate and the like of the mesa technology; and the method is easy to realize the high-speed InGaAs photoelectric detector with large photosensitive surface, small dark current and the transmission rate of more than 10Gb / s, and can not only improve the responsiveness at the short wave of 850nm, but also keep the high response feature of the longwave of 1310-1550nm and realize the bicolor photoelectric detector which also has higher response at the short wave of 850nm.

Description

technical field [0001] The invention relates to a quasi-planar high-speed two-color indium gallium arsenic photodetector and a manufacturing method thereof, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] With the development of high-speed broadband optical fiber communication, data processing and Internet technology and the emergence of new fields such as high-speed optical interface technology, optical phased array radar and radio frequency optical fiber transmission, there is an urgent need for high sensitivity, high response, fast transmission rate and multiple Photodetectors for band detection. [0003] At present, there are two structures of high-speed InGaAs photodetectors. One is to use the conventional planar diffusion method on the N+ substrate to reduce the photosensitive surface of the detector to reduce the parasitic capacitance; the other is to use the semi-insulating substrate. The P-type layer is formed...

AI Technical Summary

Problems solved by technology

Compared with the two, the former has simple process, small dark current and high reliability, but has disadvantages such as difficult coupling; the latter has a large photosensitive surface, and the coupling is convenient and reliable, but the process is relatively complicated, and the side of the table needs passivation protection. Problems such as dark current increase and reliability degradation

Due to the reasons of materials, device manufacturing, etc., there is no two-color photodetector that takes into account both short-wavelength 850nm and long-wavelength 1310nm and 1550nm.

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