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A method for preparing germanium nanotube arrays

A nanotube array, nanotube technology, applied in the fields of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problem that one-dimensional nanotubes are rarely studied, and achieve controllable diameter, controllable tube wall thickness, and simple method. Effect

Inactive Publication Date: 2011-12-28
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, one-dimensional germanium nanowire structures have been prepared by methods such as CVD and MBE (Eli Sutter, Birol Ozturk and Peter Sutter, Nanotechnology, 2008, 19, 435607; T.I.Kamins, X.Li, and R.Stanley Williams.Nano Letters, 2004, 4, 503; CN200810019793, CN200710070240.9), however, there is still little research on one-dimensional nanotubes of germanium

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  • A method for preparing germanium nanotube arrays
  • A method for preparing germanium nanotube arrays
  • A method for preparing germanium nanotube arrays

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Embodiment 1

[0025] 1) A platinum sheet was used as the counter electrode, a saturated calomel electrode was used as the reference electrode, and ITO glass was used as the working electrode. The aqueous solution of zinc chloride and potassium chloride is used as the electrolyte, the concentration of potassium chloride in the electrolyte is 0.1mol / L, and the concentration of zinc chloride is 0.05mmol / L. During the experiment, oxygen was continuously delivered through the catheter to the vicinity of the surface of the working electrode in the electrolyte for bubbling. A potential of -0.9 V relative to the reference electrode was applied to the working electrode by an electrochemical analyzer, and the temperature of the electrolyte was maintained at 70 °C. The electrochemical deposition time was 5 hours. The ITO glass was taken out to obtain a one-dimensional array of aligned zinc oxide nanowires grown on the ITO glass, wherein the diameter of the zinc oxide nanowires was about 100 nm and th...

Embodiment 2

[0028] 1) The platinum sheet was used as the counter electrode, the saturated calomel electrode was used as the reference electrode, and the copper sheet was used as the working electrode. The aqueous solution of zinc chloride and potassium chloride is used as the electrolytic solution, the concentration of potassium chloride in the electrolytic solution is 0.1mol / L, and the concentration of zinc chloride is 0.2mmol / L. During the experiment, oxygen was continuously delivered through the catheter to the vicinity of the surface of the working electrode in the electrolyte for bubbling. A potential of -0.8 V relative to the reference electrode was applied to the working electrode by an electrochemical analyzer, and the temperature of the electrolyte was maintained at 80°C. The electrochemical deposition time was 60 minutes. The copper sheet was taken out to obtain a one-dimensional array of aligned zinc oxide nanowires grown on the copper sheet, wherein the zinc oxide nanowires h...

Embodiment 3

[0031] 1) A platinum sheet is used as a counter electrode, a saturated calomel electrode is used as a reference electrode, and a silicon sheet is used as a working electrode. The aqueous solution of zinc chloride and potassium chloride is used as the electrolytic solution, the concentration of potassium chloride in the electrolytic solution is 0.1mol / L, and the concentration of zinc chloride is 0.1mmol / L. During the experiment, oxygen was continuously delivered through the catheter to the vicinity of the surface of the working electrode in the electrolyte for bubbling. A potential of -0.9 V relative to the reference electrode was applied to the working electrode by an electrochemical analyzer, and the temperature of the electrolyte was maintained at 90°C. The electrochemical deposition time was 3 hours. The silicon wafer was taken out to obtain an aligned one-dimensional array of zinc oxide nanowires grown on the silicon wafer, wherein the diameter of the zinc oxide nanowires...

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Abstract

The invention belongs to the technical field of preparation of nanometer materials, in particular to a method for preparing germanium nanotube arrays. The present invention uses the electrochemical deposition method to grow aligned zinc oxide nanowire arrays on a conductive substrate, and then uses the aligned zinc oxide nanowire arrays as a template to deposit a layer of germanium on the surface of the zinc oxide nanowires by thermal evaporation. The thin film is soaked in hydrochloric acid to remove the zinc oxide template to obtain a one-dimensional germanium nanotube array. The method of the invention is simple, and one end of the obtained germanium nanotube is closed, the length is 1-5 μm, the diameter is 100-500 nm, the thickness of the tube wall is 20-60 nm, and the structure is polycrystalline or amorphous. The germanium nanotubes prepared by the invention are arranged in an orderly manner on the conductive substrate, and the length, diameter and thickness of the tube wall are all controllable.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanometer materials, in particular to a method for preparing germanium nanotube arrays. Background technique [0002] One-dimensional nanomaterials have special physical and chemical properties different from bulk materials, and have important potential application prospects in the fields of biology, chemical engineering, and electronics. Nanotube is a special kind of one-dimensional nanomaterial, and its special hollow structure makes it have a larger specific surface area, so it will show excellent performance in photocatalysis and sensors. Due to the limitations of current technical means, the preparation of one-dimensional nanotubes is still relatively difficult, so how to effectively control the growth of nanotubes is still a difficult problem to be solved. [0003] Germanium is an important semiconductor material. Because germanium has a high electron transport speed, and the lattic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/08C30B29/62B82B3/00
Inventor 师文生凌世婷佘广为
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI