Preparing method of p-type stannous oxide ditch film transistors

Abstract

The present invention discloses a preparing method of p-type stannous oxide ditch film transistors, and p-type conducting stannous oxide ditch layers are prepared by using electron beam evaporation technology and rapid thermal annealing technology. The preparing method is simple and controllable, and can realize low-temperature preparation. The p-type stannous oxide ditch film transistors have high field effect mobility, can be used for organic light-emitting diodes and development of oxide based compensating and logic circuits with low loss and the like, and have wide application prospects in the technical field of displays.

Description

technical field [0001] The invention relates to a preparation method of a thin film transistor, in particular to a preparation method of a p-type stannous oxide channel thin film transistor. Background technique [0002] Thin film transistors (TFTs) are generally composed of substrates, gate dielectric layers, channel layers, gate electrodes, source electrodes and drain electrodes, including TFTs with bottom gate structures (such as figure 1 shown) and top-gate TFTs (such as figure 2 shown), it is used as a switching element in liquid crystal displays to drive pixels, in which Si-based (amorphous Si or polycrystalline Si is the channel) TFT is dominant, but both amorphous Si TFT and polycrystalline Si TFT have irreversible Disadvantages to be overcome, such as photoinduced performance degradation, lower field-effect mobility, limited aperture ratio, and higher power consumption. Therefore, the development of display technology objectively requires the replacement of Si ma...

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Problems solved by technology

However, the field effect mobility of the p-type TFT with tin oxide and nickel oxide as the channel layer is very low, less than 0.011 cm 2 V -1 the s -1 ; Although the field-effect mobility of the p-type TFT with stannous oxide as the channel layer is two orders of magnitude higher than that of the former two, its channel layer is made of expensive yttria-stabilized zirconia (yttria-stabilizedzirconia, The SnO epitaxial film is prepared on the YSZ)(001) substrate by using a single-phase SnO ceramic target and pulsed laser deposition method at high temperature (575°C), and the transistor has a top-gate structure. The preparation requirements, the type of substrate used and the temperature requirements, as well as the requirements for the operation of the equipment and the subsequent process (electrode preparation) are relatively high, so the preparation is difficult and also leads to an increase in the preparation cost

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