Preparing method of p-type stannous oxide ditch film transistors
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
- Publication Date
- 2010-06-30
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a preparation method of a thin film transistor, in particular to a preparation method of a p-type stannous oxide channel thin film transistor. Background technique
[0002] Thin film transistors (TFTs) are generally composed of substrates, gate dielectric layers, channel layers, gate electrodes, source electrodes and drain electrodes, including TFTs with bottom gate structures (such as figure 1 shown) and top-gate TFTs (such as figure 2 shown), it is used as a switching element in liquid crystal displays to drive pixels, in which Si-based (amorphous Si or polycrystalline Si is the channel) TFT is dominant, but both amorphous Si TFT and polycrystalline Si TFT have irreversible Disadvantages to be overcome, such as photoinduced performance degradation, lower field-effect mobility, limited aperture ratio, and higher power consumption. Therefore, the development of display technology objectively requires the replacement of Si ma...