Quantum dot optical wavelength converting layer for solar cell

A technology of solar cells and quantum dots, applied in optics, circuits, photovoltaic power generation, etc., can solve the problems of reduced fluorescence efficiency and stability, limited practical application, etc., and achieve the effects of superior fluorescence stability, improved efficiency, and high fluorescence efficiency

Inactive Publication Date: 2010-07-28
EI DU PONT DE NEMOURS & CO
View PDF9 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Binary quantum dots can only adjust the fluorescence wavelength and physical and chemical properties by changing the size of the quantum dots, which has great limitations.
In particular, high-quality small-size

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot optical wavelength converting layer for solar cell
  • Quantum dot optical wavelength converting layer for solar cell
  • Quantum dot optical wavelength converting layer for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] Preparation of ternary alloy quantum dots CdSe 0.2 S 0.8 : Dissolve 2mmol Se and 8mmol S in 10ml trioctylphosphine (TOP) and 10ml octadecene (ODE) under magnetic stirring at room temperature to form a SeS precursor solution; dissolve 10mmol chromium oxide (CdO) in 10ml In oleic acid and 10ml oleylamine, a Cd precursor solution was formed under magnetic stirring at 300°C. The above two precursor solutions with equal volumes were mixed, stirred magnetically, and then heated to 300°C to rapidly nucleate. Then cool down to room temperature, the reaction is quenched, the growth process is interrupted, and CdSe is generated 0.2 S 0.8 Ternary alloy quantum dots, the particle size is about 5nm.

Embodiment 2

[0086] Preparation of ternary alloy quantum dots Zn 0.5 Cd 0.5 S: Dissolve 1 mol of sulfur and 30 μmol of vulcanizing agent in 6 g of octadecene (ODE) and sonicate for 1 hour; Carbene (ODE), then mix the two solutions and transfer them to a three-necked flask, heat to 120°C for 2 hours with magnetic stirring to obtain a clear solution, and then heat to 240°C to generate Zn by thermal annealing under nitrogen atmosphere 0.5 Cd 0.5 S ternary alloy quantum dots, the particle size is about 4nm.

Embodiment 3

[0088] Preparation of ternary alloy quantum dots Zn 0.01 Cd 0.99 Se: A mixed solution of 5 mmol of chromium oxide, 5 ml of octyl phosphonium and 15 ml of tetradecenylphosphonic acid was magnetically stirred at 300° C. for 6 hours, cooled to room temperature and left for 48 hours. Dissolve 5 mmol of selenium in 10 ml of trioctylphosphine. The two solutions were then mixed and heated to 280 °C for 40 min to generate CdSe nanoparticles. Dissolve 50 μmol diethylzinc and 50 μmol selenium in 0.5ml trioctylphosphorus solution, then raise the temperature to 300°C and inject the prepared CdSe nanoparticle solution, heat for 3 hours and then cool down rapidly, dilute with chloroform to form ternary alloy quantum dots Zn 0.01 Cd 0.99 Se, the particle size is about 4nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a quantum dot optical wavelength converting layer for a solar cell. Ternary alloy quantum dot fluorescent particles are provided, wherein the particle size of quantum dots is between 1 and 100nm; the quantum spot can be represented by the following formula: AxByCz, wherein the A is a transition metal element; the B is a transition metal and oxygen group element and/or a nitrogen group element; the C is an oxygen group element and/or a nitrogen group element; the B is different from the C; and the x, the y and the z are greater than 0 and less than 1. The invention also provides the application of the ternary alloy quantum dot fluorescent particles in the solar cell.

Description

technical field [0001] The invention relates to a wavelength conversion layer containing ternary alloy quantum dots and the use of the quantum dot wavelength conversion layer ternary alloy quantum dots in solar cells. Background technique [0002] The rapid development of global science and technology and economic activities has led to a surge in human energy demand, and the phenomenon of future energy shortage has emerged. The environmental pollution caused by the use and discharge of fossil fuels has become a major problem that cannot be ignored by countries all over the world. The inexhaustible and inexhaustible solar energy is a clean, renewable and green energy source. Solar power generation technology is beneficial to purify the environment and reduce pollution, and is an important way for human beings to fundamentally solve energy problems. However, the photoelectric conversion efficiency of solar cells is low and the cost of power generation is too high, which is a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K9/00H01L31/055G02F1/37
CPCY02E10/50Y02E10/52
Inventor 王颖娟朱红军
Owner EI DU PONT DE NEMOURS & CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap