Micro fluid control detection device based on surface-enhanced Raman scattering active substrate
A technology of surface-enhanced Raman and active substrates, which is applied in Raman scattering, technology for producing decorative surface effects, and electric solid-state devices. Layer layout and other issues, to achieve the effect of reducing industrial production costs, promoting research and production development, and improving production efficiency and integration
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Embodiment 1
[0046] Example 1. Preparation of microfluidic detection device based on SERS substrate
[0047] 1) Preparation of SERS active substrate
[0048] Spin-coated RZJ-304 positive photoresist with a thickness of 1μm on the surface of silicon substrate 1 (substrate a), and pre-baked it in an oven at 98°C for 15 minutes, with a wavelength of 365nm and an intensity of 5.4mW / cm 2 The ultraviolet light is irradiated through the mask for 5s and developed in the developer of RZJ-304 positive photoresist for 30s to form a photoresist pattern in the shape of a micro-channel; put the silicon substrate 1 with the photoresist pattern in The oxygen plasma bombarded the cavity with a power of 250W and an oxygen flow rate of 30sccm / min. The photoresist was bombarded for 5 minutes to prepare a nanoparticle structure on the silicon substrate 1. The silicon substrate with a nanoparticle structure 1 Put the power into 400W, SF 6 And C 4 F 8 In the cavity of a reactive ion etching machine with flow rates of...
Embodiment 2
[0051] Example 2. Preparation of microfluidic detection device based on SERS substrate
[0052] 1) Preparation of SERS active substrate
[0053] Spin-coated Shipley SPR positive photoresist with a thickness of 5μm on the surface of silicon substrate 1 (substrate a), and pre-baked in an oven at 98°C for 15 minutes, with a wavelength of 365nm and an intensity of 5.4mW / cm 2 The ultraviolet light is irradiated through the mask for 60s, and developed in the developer of Shipley SPR positive photoresist for 90s to form a photoresist pattern in the shape of a micro-channel; put the silicon substrate 1 with the photoresist pattern into the power Oxygen plasma bombards the cavity with an oxygen flow rate of 250W and an oxygen flow rate of 30sccm / min. The photoresist is bombarded for 25 minutes to prepare a nanoparticle structure on the substrate; the silicon substrate 1 with a nanoparticle structure is placed The power is 400W, SF 6 And C 4 F 8 In the cavity of the reactive ion etching mach...
Embodiment 3
[0055] Example 3. Preparation of a microfluidic detection device based on a SERS substrate
[0056] 1) Preparation of SERS active substrate
[0057] On the surface of the silicon substrate 1 (substrate a), a 20μm-thick Shipley AZ series positive photoresist was spin-coated, and after pre-baking on a hot plate at 110℃ for 100s, the wavelength was 365nm and the intensity was 4.5mW / cm 2 The UV light is irradiated through the mask for 400s, and developed in the developer of Shipley AZ series positive photoresist for 600s to form a photoresist pattern in the shape of a micro-channel; put the silicon substrate 1 with the photoresist pattern in The oxygen plasma bombarded the cavity with a power of 250W and an oxygen flow rate of 30 sccm / min, and bombarded the photoresist for 100 minutes to prepare a nanoparticle structure on the substrate; the silicon substrate 1 with a nanoparticle structure was placed Input power is 400W, SF 6 And C 4 F 8 In the cavity of a reactive ion etching machine...
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