Preparation method of sodium bismuth titanate-based ferroelectric film

A bismuth sodium titanate and ferroelectric thin film technology, applied in the direction of layered products, etc., can solve the problems of no effective optimization of performance, poor film formation and insufficient performance of bismuth sodium titanate-based thin films

Inactive Publication Date: 2010-08-18
TONGJI UNIV
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Problems solved by technology

Using the sol-gel method on Pt/Ti/SiO 2 Depositing bismuth sodium titanate-based films on /Si substrates has problems such as poor film formation and insufficient performance. This is mainly due to precipitation when mixing sodium bismuth titanate sol and barium titanate sol. There are

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  • Preparation method of sodium bismuth titanate-based ferroelectric film
  • Preparation method of sodium bismuth titanate-based ferroelectric film
  • Preparation method of sodium bismuth titanate-based ferroelectric film

Examples

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Effect test

Embodiment 1

[0047] Embodiment 1: in Pt / Ti / SiO 2 / Si substrate prepared 0.94Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 Ferroelectric thin film

[0048] 1. The chemical raw materials used are bismuth nitrate (pentahydrate), sodium acetate (trihydrate), barium acetate and tetrabutyl titanate, and the solvent is glacial acetic acid and water (the volume ratio of glacial acetic acid and water is about 6:1 ). First bismuth nitrate (pentahydrate), sodium acetate (trihydrate) is 1.02:1 according to the molar ratio of bismuth nitrate and sodium acetate, and in the glacial acetic acid mixed solution of described bismuth nitrate and sodium acetate, bismuth nitrate and sodium acetate The sum of the molar concentrations is 0.6M; heated to boiling in glacial acetic acid solution, evaporated for 10 minutes, stirred at 60°C for about 120 minutes, cooled and stirred for 10 minutes, cooled to room temperature, and recorded as precursor solution 1. Mix ethylene glycol ether and acetylacetone (the volume ratio o...

Embodiment 2

[0055] Embodiment 2: in Pt / Ti / SiO 2 / Si substrate prepared 0.94Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 Ferroelectric thin film

[0056] 1. The chemical raw materials used are bismuth nitrate (pentahydrate), sodium acetate (trihydrate), barium acetate and tetrabutyl titanate, and the solvent is glacial acetic acid and water (the volume ratio of glacial acetic acid and water is about 10:1 ). First bismuth nitrate (pentahydrate), sodium acetate (trihydrate) is 1.10:1 according to the molar ratio of bismuth nitrate and sodium acetate, and in the glacial acetic acid mixed solution of described bismuth nitrate and sodium acetate, bismuth nitrate and sodium acetate The sum of the molar volume concentrations is 0.4M; heated to boiling in glacial acetic acid solution, evaporated for 5 minutes, stirred at 80°C for 120 minutes, cooled and stirred for 20 minutes, cooled to room temperature, and recorded as precursor solution 1. Mix ethylene glycol ether and acetylacetone (the volume ratio ...

Embodiment 3

[0061] Embodiment 3: in Pt / Ti / SiO 2 / Si substrate prepared 0.94Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 Ferroelectric thin film

[0062]1. The chemical raw materials used are bismuth nitrate (pentahydrate), sodium acetate (trihydrate), barium acetate and tetrabutyl titanate, and the solvent is glacial acetic acid and water (the volume ratio of glacial acetic acid and water is about 8:1 ). First bismuth nitrate (pentahydrate), sodium acetate (trihydrate) is 1.02:1 according to the molar ratio of bismuth nitrate and sodium acetate, and in the glacial acetic acid mixed solution of described bismuth nitrate and sodium acetate, bismuth nitrate and sodium acetate The sum of the molar volume concentrations is 0.2M; heated to boiling in glacial acetic acid solution, evaporated for 10 minutes, stirred at 60°C for about 120 minutes, cooled and stirred for 10 minutes, cooled to room temperature, and recorded as precursor solution 1. Mix ethylene glycol ether and acetylacetone (the volume r...

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Abstract

The invention belongs to the field of electronic functional materials and devices, and particularly relates to a preparation method of a sodium bismuth titanate-based ferroelectric film. The invention provides the preparation method of the sodium bismuth titanate-barium titanate ferroelectric film, which is a chemical preparation method, i.e. a sol-gel method, wherein Pt/Ti/SiO2/Si is adopted as a substrate, the concentration of a precursor solution is controlled to be 0.1 to 0.3M, clear and transparent sodium bismuth titanate-barium titanate sol is obtained through adding a novel chelating agent-ammonia water, and the ferroelectric film is prepared. In the method of the invention, the sodium bismuth titanate-barium titanate ferroelectric film is prepared by adopting the novel chelating agent-ammonia water, so that the performance of the film can be optimized.

Description

technical field [0001] The invention belongs to the field of electronic functional materials and devices, and in particular relates to a preparation method of bismuth sodium titanate-based ferroelectric thin film. Background technique [0002] Ferroelectric materials are widely used in the conversion, processing and storage of various types of information, and are an important class of high-tech new materials with fierce international competition. From the perspective of environmental materials, it is an urgent task for scientific and technological workers to research and develop new environment-friendly ferroelectric materials. However, the content of lead oxide (or lead tetraoxide) in the ferroelectric materials lead titanate (PT), lead zirconate titanate (PZT) and lead magnesium niobate (PMN) used in the past accounts for about 70% of the total mass of raw materials. %about. During the preparation and use of such ferroelectric materials with excessive lead content, they...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/624B32B9/00
Inventor 沈波翟继卫方小磊周歧刚
Owner TONGJI UNIV
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