Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of sodium bismuth titanate-based ferroelectric film

A bismuth sodium titanate and ferroelectric thin film technology, applied in the direction of layered products, etc., can solve the problems of no effective optimization of performance, poor film formation and insufficient performance of bismuth sodium titanate-based thin films

Inactive Publication Date: 2010-08-18
TONGJI UNIV
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the sol-gel method on Pt / Ti / SiO 2 Depositing bismuth sodium titanate-based films on / Si substrates has problems such as poor film formation and insufficient performance. This is mainly due to precipitation when mixing sodium bismuth titanate sol and barium titanate sol. There are two methods: one is to make it clear and transparent by stirring for a long time without adding a chelating agent; the other is to add a chelating agent to make it clear and form a film, but the generally selected chelating agent-ethanolamine has not been effectively optimized performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of sodium bismuth titanate-based ferroelectric film
  • Preparation method of sodium bismuth titanate-based ferroelectric film
  • Preparation method of sodium bismuth titanate-based ferroelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1: in Pt / Ti / SiO 2 / Si substrate prepared 0.94Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 Ferroelectric thin film

[0048] 1. The chemical raw materials used are bismuth nitrate (pentahydrate), sodium acetate (trihydrate), barium acetate and tetrabutyl titanate, and the solvent is glacial acetic acid and water (the volume ratio of glacial acetic acid and water is about 6:1 ). First bismuth nitrate (pentahydrate), sodium acetate (trihydrate) is 1.02:1 according to the molar ratio of bismuth nitrate and sodium acetate, and in the glacial acetic acid mixed solution of described bismuth nitrate and sodium acetate, bismuth nitrate and sodium acetate The sum of the molar concentrations is 0.6M; heated to boiling in glacial acetic acid solution, evaporated for 10 minutes, stirred at 60°C for about 120 minutes, cooled and stirred for 10 minutes, cooled to room temperature, and recorded as precursor solution 1. Mix ethylene glycol ether and acetylacetone (the volume ratio o...

Embodiment 2

[0055] Embodiment 2: in Pt / Ti / SiO 2 / Si substrate prepared 0.94Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 Ferroelectric thin film

[0056] 1. The chemical raw materials used are bismuth nitrate (pentahydrate), sodium acetate (trihydrate), barium acetate and tetrabutyl titanate, and the solvent is glacial acetic acid and water (the volume ratio of glacial acetic acid and water is about 10:1 ). First bismuth nitrate (pentahydrate), sodium acetate (trihydrate) is 1.10:1 according to the molar ratio of bismuth nitrate and sodium acetate, and in the glacial acetic acid mixed solution of described bismuth nitrate and sodium acetate, bismuth nitrate and sodium acetate The sum of the molar volume concentrations is 0.4M; heated to boiling in glacial acetic acid solution, evaporated for 5 minutes, stirred at 80°C for 120 minutes, cooled and stirred for 20 minutes, cooled to room temperature, and recorded as precursor solution 1. Mix ethylene glycol ether and acetylacetone (the volume ratio ...

Embodiment 3

[0061] Embodiment 3: in Pt / Ti / SiO 2 / Si substrate prepared 0.94Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 Ferroelectric thin film

[0062]1. The chemical raw materials used are bismuth nitrate (pentahydrate), sodium acetate (trihydrate), barium acetate and tetrabutyl titanate, and the solvent is glacial acetic acid and water (the volume ratio of glacial acetic acid and water is about 8:1 ). First bismuth nitrate (pentahydrate), sodium acetate (trihydrate) is 1.02:1 according to the molar ratio of bismuth nitrate and sodium acetate, and in the glacial acetic acid mixed solution of described bismuth nitrate and sodium acetate, bismuth nitrate and sodium acetate The sum of the molar volume concentrations is 0.2M; heated to boiling in glacial acetic acid solution, evaporated for 10 minutes, stirred at 60°C for about 120 minutes, cooled and stirred for 10 minutes, cooled to room temperature, and recorded as precursor solution 1. Mix ethylene glycol ether and acetylacetone (the volume r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Coercive fieldaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of electronic functional materials and devices, and particularly relates to a preparation method of a sodium bismuth titanate-based ferroelectric film. The invention provides the preparation method of the sodium bismuth titanate-barium titanate ferroelectric film, which is a chemical preparation method, i.e. a sol-gel method, wherein Pt / Ti / SiO2 / Si is adopted as a substrate, the concentration of a precursor solution is controlled to be 0.1 to 0.3M, clear and transparent sodium bismuth titanate-barium titanate sol is obtained through adding a novel chelating agent-ammonia water, and the ferroelectric film is prepared. In the method of the invention, the sodium bismuth titanate-barium titanate ferroelectric film is prepared by adopting the novel chelating agent-ammonia water, so that the performance of the film can be optimized.

Description

technical field [0001] The invention belongs to the field of electronic functional materials and devices, and in particular relates to a preparation method of bismuth sodium titanate-based ferroelectric thin film. Background technique [0002] Ferroelectric materials are widely used in the conversion, processing and storage of various types of information, and are an important class of high-tech new materials with fierce international competition. From the perspective of environmental materials, it is an urgent task for scientific and technological workers to research and develop new environment-friendly ferroelectric materials. However, the content of lead oxide (or lead tetraoxide) in the ferroelectric materials lead titanate (PT), lead zirconate titanate (PZT) and lead magnesium niobate (PMN) used in the past accounts for about 70% of the total mass of raw materials. %about. During the preparation and use of such ferroelectric materials with excessive lead content, they...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/475C04B35/624B32B9/00
Inventor 沈波翟继卫方小磊周歧刚
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com