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Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof

A solar cell and high conversion rate technology, applied in the field of solar cells, can solve the problems of low solar conversion efficiency and silicon-based thin-film solar cell conversion rate to be improved, achieve high photoelectric conversion efficiency, increase light absorption efficiency, and improve conversion efficiency Effect

Active Publication Date: 2010-10-20
湖南共创光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because of its low solar energy conversion efficiency, about 6%, the conversion rate of this silicon-based thin film solar cell needs to be improved

Method used

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  • Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof
  • Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof
  • Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Example 1: Thin-film solar cell with multi-junction and multi-stack structure based on stainless steel

[0064] (1) Battery structure: stainless steel / TCO / n-μc-Si 1-x Ge x / i-μc-Si 1-x Ge x / p-μc-Si 1-x Ge x / intermediate reflective layer / n-μc-Si / i-μc-Si / p-μc-Si / intermediate reflective layer / n-A-Si 1-x Ge x / i-A-Si 1- x Ge x / p-A-Si 1-x Ge x / intermediate reflective layer / n-A-Si / i-A-Si / p-A-Si / intermediate reflective layer / n-μc-SiC / i-μc-SiC / p-μc-SiC / intermediate reflective layer / n-A-SiC / i-A-SiC / p-A-SiC / TCO / anti-reflection coating;

[0065] (2) Preparation process:

[0066] 1. After cleaning the stainless steel sheet, use PVD method to prepare ZnO:Ag, Al thin film (or use sol-gel method), then dry it, and then heat treatment at 400 ° C for 1 minute to 10 minutes in a hydrogen-containing atmosphere;

[0067] 2. Deposition of phosphorus (P) doped amorphous A-Si by PECVD method 1-x Ge x Thin film (1>x>0 uniform transition), then laser crystallization to form...

Embodiment 2

[0087] Example 2: Thin-film solar cell with glass substrate multi-junction multi-layer structure

[0088] (1) Battery structure: anti-reflection film / glass / TCO / p-A-SiC / i-A-SiC / n-A-SiC / intermediate reflection layer / p-μc-SiC / i-μc-SiC / n-μc-SiC / intermediate reflection layer / p-A-Si / i-A-Si / n-A-Si / intermediate reflection layer / p-A-Si 1-x Ge x / i-A-Si 1-x Ge x / n-A-Si 1-x Ge x / intermediate reflective layer / p-μc-Si / i-μc-Si / n-μc-Si / intermediate reflective layer / p-μc-Si 1-x Ge x / i-μc-Si 1-x Ge x / n-μc-Si 1- x Ge x / TCO / Al;

[0089] (2) The preparation process is as follows:

[0090] 1. After cleaning the glass sheet, use PVD method to prepare ZnO:Ag, Al thin film (or prepare it by sol-gel method), then dry it, and then heat treat it at 400°C for 1 minute to 10 minutes in a hydrogen-containing atmosphere;

[0091] 2. Deposit p-type boron (B)-doped amorphous A-SiC, i-type amorphous A-SiC, phosphorus (P)-doped n-type amorphous A-SiC films by PECVD method or HD-PECVD method , ...

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Abstract

The invention provides a multijunction multi-laminated thin film solar cell and a production method thereof. A multijunction multi-laminated structure can be selected from six related materials to form two-junction, three-junction, four-junction, five-junction and six-junction thin film solar cells. By adopting a laser crystallizing process, a plasma-doped process and a PECVD (Plasma Enhanced Chemical Vapor Deposition) transition layer process, the interface performances among various layers can be improved, for example, the interface resistance among various laminations can be reduced and the crystallizing performances of thin film materials can be enhanced; and by using a hydrogen treatment process, the stability of the performances of various layers of materials can be reduced and the light transmittance and the conductivity of transparent conductive thin film materials and the interfaces can be improved. The conversion efficiency of the battery is expected to reach 12-18 percent and the battery has better stability.

Description

technical field [0001] The invention relates to a solar cell, especially a silicon-based thin-film solar cell structure and a manufacturing method thereof. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. Russell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoelectric conversion efficiency was about 6%. Since then, the research and production of solar cells on monocrystalline silicon and polycrystalline...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/06H01L31/0216H01L31/0232H01L31/18H01L31/20H01L31/054H01L31/076
CPCY02E10/52Y02E10/548Y02P70/50
Inventor 李廷凯李晴风陈建国
Owner 湖南共创光伏科技有限公司
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