ZnO based diluted magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof

A dilute magnetic semiconductor and mesoporous technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of complicated preparation process, limited research and development and application of ZnO-based DMSs spintronic devices, expensive equipment, etc. The effect of cheap raw materials and low temperature

Inactive Publication Date: 2010-12-15
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have disadvantages such as expensive equipment and complicated preparation proces

Method used

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  • ZnO based diluted magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof
  • ZnO based diluted magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof
  • ZnO based diluted magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 5.9mg Mn(CH 3 COO) 2 4H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours.

[0024] The morphology of the powder was observed by scanning electron microscopy as figure 1 As shown, it can be seen from the figure that the obtained powder is a rod-like / needle-like structure with a rough surface, and is a one-dimensional mesoporous crystal nanomaterial self-assembled by small particles; the crystal form of the powder is analyzed by X-ray diffractometer, as shown in figure 2 It can be seen that this mesoporous crystal...

Embodiment 2

[0026] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 6.0mg Co(CH 3 COO) 2 4H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours. The magnetic test results show that the saturation magnetization is 0.0236emu / g, the coercive force is 94Oe, and it exhibits ferromagnetism at room temperature.

Embodiment 3

[0028] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 4.4mg Cu(CH 3 COO) 2 ·H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours. The magnetic test results show that the saturation magnetization is 0.0159emu / g, the coercive force is 66Oe, and it exhibits ferromagnetism at room temperature.

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Abstract

The invention relates to a semiconductor and provides a ZnO based diluted magnetic semiconductor of one-dimensional mesoporous crystal and a preparation method thereof. The ZnO based diluted magnetic semiconductor of the one-dimensional mesoporous crystal is a transition metal-doped ZnO based one-dimensional mesoporous crystal nanometer material, and has a molecular formula of Zn1-xTMxO, wherein TM is transition metal, and x is the percentage of doped components and equals to 0.01 to 0.10. The preparation method is as follows: dissolving zinc salt in an ionic solution, and heating until the solution is transparent; adding transition metal salt into the solution until the transition metal salt is completely dissolved to obtain a mixed solution; heating and refluxing the mixed solution, naturally cooling down to room temperature, washing obtained precipitate by water and ethanol in order, and drying obtained powder to obtain the ZnO based diluted magnetic semiconductor of the one-dimensional mesoporous crystal with room temperature ferromagnetism. The crystal has the advantages of low growth temperature, simple requirement on equipment, mild reaction condition, nonvolatile solvent, green environment of the whole reaction process and cheap raw material.

Description

technical field [0001] The invention relates to a semiconductor, in particular to a one-dimensional mesoporous crystal ZnO-based dilute magnetic semiconductor and a preparation method thereof. Background technique [0002] Diluted magnetic semiconductors (DMSs) refer to partial substitution of II-VI, IV-VI, or III-V by magnetic transition metals or rare earth metal elements (such as: Mn, Fe, Co, Ni, Cr and Eu, etc.) A new type of semiconductor material formed after some elements in the semiconductor. At present, people are mainly studying DMSs based on II-VI and III-V compounds. The semiconductor bases generally include GaAs, InAs, GaSb, GaN, GaP, ZnO, ZnS, ZnSe, ZnTe, etc. [0003] As a traditional wide-bandgap semiconductor material, ZnO has become a research hotspot in many fields due to its excellent performance, especially recently, ZnO-based DMSs have attracted worldwide attention due to its huge potential application prospects in spintronics. extensive attention of ...

Claims

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Application Information

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IPC IPC(8): C01G9/02
Inventor 戴李宗肖文军吴廷华许一婷罗伟昂
Owner XIAMEN UNIV
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