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Silicon germanide bipolar-complementary metal oxide semiconductor AB power amplifier

A technology of oxide semiconductors and power amplifiers, applied in power amplifiers, improved amplifiers to improve efficiency, etc., to achieve the effect of ensuring temperature stability, good temperature stability, and good work

Inactive Publication Date: 2011-01-19
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the power amplifiers realized by this structure often work in narrowband, so it is necessary to improve this structure when designing broadband power amplifiers

Method used

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  • Silicon germanide bipolar-complementary metal oxide semiconductor AB power amplifier
  • Silicon germanide bipolar-complementary metal oxide semiconductor AB power amplifier
  • Silicon germanide bipolar-complementary metal oxide semiconductor AB power amplifier

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Embodiment Construction

[0023] The technical solution of the present invention is a specific embodiment, and the embodiment will not be repeated here. Describe the working process of the present invention in detail below.

[0024] refer to figure 2, the first stage bias circuit uses 2.5V power supply voltage. The second stage bias circuit uses 3.3V supply voltage. Select the selected tube width and length of the second-stage transistor Q2 and the number of parallel tubes according to the desired output power. Considering the collector parasitic capacitance of the second-stage transistor Q2, the second-stage collector inductance L3 is used to resonate with the parasitic capacitance at 5.5 GHz, and serves as a filter network to filter out high-order harmonics. The sixth capacitor C6 and the fourth inductor L4 serve as an impedance transformation network to transform the load resistance to a target value we need. The fourth capacitor C4 serves as a coupling between the first pre-amplification stage...

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PUM

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Abstract

The invention discloses a silicon germanide bipolar-complementary metal oxide semiconductor AB power amplifier. The circuit structure of the amplifier is divided into a first pre-amplification stage and a second power amplification stage, wherein the amplifying tube of the first stage is a standard silicon germanide bipolar transistor, and the amplifying tube of the second stage is a high-voltage silicon germanide bipolar transistor so as to obtain high power output; and bias current is provided in a form of current mirror, and the temperature stability of a bias circuit is improved by using negative temperature feedback. The amplifier has high linearity, low power consumption and good temperature stability. When P1dB is output, the compression point is about 18.5dBm. After 5.5GHz, the simulation S11 is less than -15dB, the S22 is less than -6.6dB, and the S21 is more than 16dB.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, and relates to a silicon germanium bipolar-complementary metal oxide semiconductor (SiGe BiCMOS) class AB power amplifier working at a center frequency of 5.5 GHz. Background technique [0002] With the rapid development of wireless local area network IEEE802.11 series technologies, people are increasingly favoring portable devices and technologies with fast data transmission rates. The 802.11a standard uses the 5-6GHz frequency band, and the design and implementation of the power amplifier working in this frequency band plays a vital role in data transmission. In recent years, radio frequency integrated circuit technology has become increasingly mature, and there have been many successful cases of full-chip integrated chip radio frequency transceivers based on CMOS technology. However, a high-efficiency and high-linearity power amplifier (Power Amplifier, PA) i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F3/20
Inventor 张书霖陈磊赖宗声苏杰张伟华林刘盛富阮颖
Owner EAST CHINA NORMAL UNIV
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