Photoetching manufacturing process

Abstract

The invention provides a photoetching manufacturing process which comprises the following steps of: manufacturing a semiconductor device, growing an isolating layer on the semiconductor device, growing a dielectric layer on the isolating layer, growing a hard mask layer on the dielectric layer, spreading photoresist, irradiating the photoresist by using short-wavelength light through a patterned mask, carrying out wet etching, and carrying out dry etching. The invention optimizes the prior art by using the photoetching manufacturing process and solves the problem of photoresist falling caused by limited adhesion ability between photoresist and dielectric in the process of wet etching.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a photoetching process. Background technique [0002] In many semiconductor processes, etching is one of the core process technologies that determine the feature size, and etching is divided into wet etching and dry etching. Wet etching is widely used in the semiconductor process, starting from cutting silicon ingots into semiconductor silicon wafers, chemical etchants are used for grinding and polishing to obtain optical-level flat and non-destructive surfaces, during thermal oxidation and epitaxial growth Prior to this, semiconductor silicon wafers were chemically cleaned to remove contamination from handling and storage. Wet etching is especially suitable for surface etching of polysilicon, oxides, nitrides and metals. In the current semiconductor process, a very important application of wet etching is the etching in the wafer double gate oxide process. , including high-voltage gat...

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Problems solved by technology

[0004] In order to overcome the problem that the photoresist is easy to fall off during the wet etching process in the prior art, the present invention provides a process that can ensure the etching precision and is beneficial to metal filling

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