Novel silicon carbide ceramic and preparation method thereof

Abstract

The invention belongs to the field of silicon carbide materials, and in particular relates to a novel silicon carbide ceramic and a preparation method thereof. The novel silicon carbide ceramic is prepared from main materials and auxiliary materials, wherein the main materials comprise the following components in percent by mass: 80 to 90 percent of silicon carbide powder, 6 to 10 percent of silicon powder and 4 to 10 percent of carbon powder; and the auxiliary materials comprise a binder and a dispersant, wherein the dosage of the binder is 1 to 5 percent based on the total mass of the main materials; and the dosage of the dispersant is 0.5 to 1 percent based on the total mass of the main materials. The silicon carbide ceramic prepared by the method has the characteristics of high performance, volume density of between 3.05 and 3.10 g / cm<3>, free silicon content of less than 5 percent, hardness of 90 to 93 HRA, and bending strength of between 400 and 450 MPa.

Description

technical field [0001] The invention belongs to the field of silicon carbide materials, and in particular relates to a novel silicon carbide ceramic and a preparation method thereof. Background technique [0002] Silicon carbide ceramics have high strength, high toughness, low creep, friction and wear resistance, corrosion resistance and good oxidation resistance, and its excellent mechanical properties, low thermal expansion coefficient and high thermal conductivity determine the carbonization Silicon ceramics have very good thermal shock resistance. In recent years, silicon carbide ceramics have been widely used in high-tech industries such as machinery, chemical industry, military industry, and energy. At present, industrial silicon carbide ceramics mainly adopt two methods: reaction sintering and pressureless sintering. [0003] The basic principle of reaction sintered silicon carbide is: under the action of capillary force, the reactive liquid silicon penetrates into ...

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Problems solved by technology

[0005] Although the existing production process of silicon carbide ceramics can satisfy the performance of silicon carbide ceramics, there are still the following problems: (1) The Achilles heel of reaction sintered silicon carbide ceramics is that the ceramics contain free silicon

The existence of free silicon restricts the application of reaction sintered silicon carbide ceramics in high temperature (greater than 1500°C) and strong corrosion environment, so the lower the content of free silicon in reaction sintered silicon carbide ceramics, the better; (2) Pressureless sintered silicon carbide Although the performance of ceramics is good, its production cost is high

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