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Method for preparing homoepitaxy substrate

A homoepitaxial and epitaxy technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve uniform stress release, high photoelectric conversion efficiency, and improve photoelectric conversion efficiency

Active Publication Date: 2011-04-06
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will lead to the large-scale industrial production of LED devices being affected

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  • Method for preparing homoepitaxy substrate
  • Method for preparing homoepitaxy substrate
  • Method for preparing homoepitaxy substrate

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Embodiment 1

[0024] As shown in Figure 2, in the preparation process of this embodiment, a mask layer 2 needs to be prepared on a homogeneous self-supporting (thick film) GaN substrate 1, and after etching, a mask layer 2 is formed on a homogeneous self-supporting (thick film) GaN substrate 1 Formation of multiple discrete free-standing (thick film) GaN substrates. After that, homogeneous growth is performed on multiple independent substrates by using the HVPE method to obtain the overall GaN layer 4 . The main process is as follows:

[0025] 1. Deposit SiO with a thickness of 1-5 μm on a homogeneous self-supporting (thick-film) GaN substrate 1 by plasma-enhanced chemical vapor deposition (PECVD) 2 film2;

[0026] 2. On the basis of step 1, use photolithography and hydrofluoric acid (HF) chemical etching on SiO 2 A strip-shaped window with a width of 5 mm is opened on the upper surface of the mask 2, and the width of the mask between the graphic windows is 0.1 mm, as shown in FIG. 2( a ...

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Abstract

The invention provides a method for preparing a homoepitaxy substrate, belonging to the technical field of preparation of high-efficiency and high-power gallium nitride-based light-emitting diodes (LED) and blue lasers (LD) and other optoelectronics devices. The method comprises the following steps of: etching and segmenting a nitride-based homogeneous self-supporting substrate into a plurality of independent parts; carrying out secondary epitaxy on the segmented homogeneous self-supporting substrates by using a metallorganic chemical vapor deposition method and a molecular beam epitaxy or hydride vapor phase epitaxy method; and transversely connecting the discrete substrates to form a complete nitride-based homogeneous self-supporting substrate. By adopting the homoepitaxy substrate prepared by the invention, the influence of the deformation on photo-electronic and electronic devices can be effectively prevented and the quality and the yield of LED, LD, high electron mobility transistor (HEMT) and other products generated by the homoepitaxy can be improved.

Description

technical field [0001] The invention relates to the technology of preparing high-efficiency and high-power GaN-based light-emitting diodes (LEDs) and blue lasers (LDs) and other optoelectronic devices based on homoepitaxial methods, and specifically provides a method for preparing homoepitaxial substrates. Background technique: [0002] As the third-generation semiconductor technology, the GaN-based material system is widely used in optoelectronic and microelectronic devices due to its good physical and chemical properties, such as white light or color LED for lighting and color display, and can be used for information storage and laser printing. Blue-violet lasers, UV detectors and high-frequency high-power transistors, etc. Currently, the biggest obstacle to the development of nitride semiconductors (InN, GaN, AlN and their alloys) is the lack of lattice and thermally matched homogenous substrates. GaN-based semiconductor light-emitting diodes (LEDs) and semiconductor l...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/304
Inventor 于彤军方浩陶岳彬李兴斌陈志忠杨志坚张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV