Preparation method of graphene thin film field emission material

A graphene thin film and field emission technology, applied in electrolytic coating, electrophoretic plating, coating, etc., can solve the problems that hinder the application of graphene and lack of preparation methods, and achieve low cost, good controllability, and easy scale-up Effect

Inactive Publication Date: 2011-04-20
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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AI-Extracted Technical Summary

Problems solved by technology

However, the lack of large-scale preparation technology of single-layer graphene and the preparation method ...
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Abstract

The invention relates to the field of field emission electronic materials, in particular to a preparation method of a graphene thin film field emission material. The method comprises the following steps of: (1) uniformly dispersing graphene and metal cation inorganic salt capable of providing charges into an low polar organic solvent or directly dispersing the graphene into an aqueous solution of an ionic surfactant by adopting an ultrasonic method to prepare a stable graphene solution with charges; and (2) orderly depositing the graphene with the charges on a conductive substrate under the action of an external electric field by utilizing an electrophoretic deposition method to prepare a graphene film. The field emission material of the invention is an even and compact graphene film rich in graphene sheets perpendicularly to the plane. The method has the advantages of simple operation, low cost and good controllability and is suitable for preparing large-area graphene films, and the excellent field emission characteristics of the graphene film lay the foundation for applying the graphene film as a cold cathode material to high-performance field emission displays, and the like.

Application Domain

Electrophoretic coatings

Technology Topic

Cvd grapheneElectrophoretic deposition +11

Image

  • Preparation method of graphene thin film field emission material
  • Preparation method of graphene thin film field emission material
  • Preparation method of graphene thin film field emission material

Examples

  • Experimental program(6)

Example Embodiment

[0025] Example 1
[0026] The device is attached figure 2 b, the stainless steel plate 1 is connected to the positive electrode of the power supply, the ITO glass 3 is connected to the negative electrode of the power supply, the graphene solution 2 is placed in a polymethyl methacrylate (PMMA) plastic container 4, and the stainless steel plate 1 and the ITO glass 3 are respectively inserted into the graphene solution 2 in.
[0027] The lateral dimension prepared by chemical peeling method is 500nm~1μm, the number of layers is 1~3 (thickness is about 0.8~2.3nm), and the conductivity is 1×10 3 S/cm graphene as raw material, graphene and Mg(NO 3 ) 2 It was added to the low-polarity organic solvent isopropanol (IPA) at a weight ratio of 1:1, and the concentration of graphene was 0.1 mg·mL -1 , ultrasonically dispersed at room temperature for 1 h to obtain a uniform and stable graphene suspension; a polished stainless steel plate was used as the positive electrode (5 cm × 2 cm × 2 mm), and a conductive glass (2 cm × 2 cm) was covered with an indium tin oxide (ITO) coating with a thickness of 100 μm 1 cm × 2 mm) as the negative electrode, the distance between the positive and negative electrodes is 5 mm, the operating voltage is 160 V, and the electrophoretic deposition time is 1 min, and a graphene film with a thickness of about 0.5 μm is prepared; the electrophoretic deposition film (1 cm × 1 cm × 2 mm) is used as The cold cathode material was tested in an ultra-high vacuum spherical chamber field emission performance test system with a vacuum degree of 10 -5 Pa, the anode is a cylindrical (iron) needle tip with a diameter of 1 mm, and the distance between the positive and negative electrodes is kept at 100 μm.
[0028] The test results show that the turn-on electric field and threshold of the graphene film field emission material are 2.3V·μm, respectively. -1 and 5.2V μm -1 , the enhancement factor is ~3700 at 11.46 mA cm -2 The decay at 12 hours at an initial current density of ∼4%.

Example Embodiment

[0029] Example 2
[0030] The device is attached figure 2 b.
[0031] The lateral dimension prepared by chemical peeling method is 500nm~1μm, the number of layers is 1~3 (thickness is about 0.8~2.3nm), and the conductivity is 1×103 S/cm graphene as raw material, graphene and Mg(NO 3 ) 2 It was added to the low-polarity organic solvent isopropanol (IPA) at a weight ratio of 2:1, and the concentration of graphene was 0.2 mg·mL -1 , ultrasonically dispersed at room temperature for 2 h to obtain a uniform and stable graphene suspension; a polished stainless steel plate was used as the positive electrode (5 cm × 2 cm × 2 mm), and a conductive glass (2 cm × 1 cm × 2 mm) as the negative electrode, the distance between the positive and negative electrodes is 10 mm, the operating voltage is 150 V, and the electrophoretic deposition time is 2 min to prepare a graphene film with a thickness of about 1 μm; the electrophoretic deposition film (1 cm × 1 cm × 2 mm) is used as a cold Cathode materials were tested in an ultra-high vacuum spherical chamber field emission performance test system with a vacuum degree of 10 -6 Pa, the anode is a cylindrical (iron) needle tip with a diameter of 1 mm, and the distance between the positive and negative electrodes is kept at 50 μm.
[0032] The test results show that the turn-on electric field and threshold of the graphene film field emission material are 1.2V·μm, respectively. -1 and 3.3V μm -1 , the enhancement factor is ~4000 at 12 mA cm -2 The decay at 12 hours at an initial current density of ∼2%.

Example Embodiment

[0033] Example 3
[0034] The device is attached figure 2 b.
[0035] The lateral dimension prepared by chemical peeling method is 500nm~1μm, the number of layers is 1~3 (thickness is about 0.8~2.3nm), and the conductivity is 1×10 3 S/cm graphene as raw material, graphene and MgCl 2 It was added to the low-polarity organic solvent dimethylformamide (DMF) at a weight ratio of 1:1, and the concentration of graphene was 0.1 mg·mL -1 , ultrasonic dispersion at room temperature for 1 h to obtain a uniform and stable graphene suspension; a polished stainless steel plate is used as the positive electrode (5 cm × 2 cm × 2 mm), and a conductive glass (2 cm × 1 cm) is covered with an indium tin oxide (ITO) coating with a thickness of 200 μm. ×2mm) is the negative electrode, the distance between the positive and negative electrodes is 5mm, the operating voltage is 100V, the electrophoretic deposition time is 2min, and a graphene film with a thickness of about 0.5 μm is prepared; Cathode materials were tested in an ultra-high vacuum spherical chamber field emission performance test system with a vacuum degree of 10 -6 Pa, the anode is a cylindrical (iron) needle tip with a diameter of 1 mm, and the distance between the positive and negative electrodes is kept at 100 μm.
[0036] The test results show that the turn-on electric field and threshold of the graphene film field emission material are ~2.0V·μm, respectively. -1 and ~5.1V μm -1 , the enhancement factor is ~3800 at 12 mA cm -2 The decay at 12 hours at an initial current density of ∼4%.

PUM

PropertyMeasurementUnit
Horizontal size500.0nm
Thickness1.0µm
Horizontal size3.0 ~ 5.0µm

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