Preparation method of graphene thin film field emission material

A graphene thin film and field emission technology, applied in electrolytic coating, electrophoretic plating, coating, etc., can solve the problems that hinder the application of graphene and lack of preparation methods, and achieve low cost, good controllability, and easy scale-up Effect

Inactive Publication Date: 2011-04-20
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the lack of large-scale preparation technology of single-layer graphene and the preparation method

Method used

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  • Preparation method of graphene thin film field emission material
  • Preparation method of graphene thin film field emission material
  • Preparation method of graphene thin film field emission material

Examples

Experimental program
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Effect test

Example Embodiment

[0025] Example 1

[0026] The device is attached figure 2 b, the stainless steel plate 1 is connected to the positive electrode of the power supply, the ITO glass 3 is connected to the negative electrode of the power supply, the graphene solution 2 is placed in a polymethyl methacrylate (PMMA) plastic container 4, and the stainless steel plate 1 and the ITO glass 3 are respectively inserted into the graphene solution 2 in.

[0027] The lateral dimension prepared by chemical peeling method is 500nm~1μm, the number of layers is 1~3 (thickness is about 0.8~2.3nm), and the conductivity is 1×10 3 S / cm graphene as raw material, graphene and Mg(NO 3 ) 2 It was added to the low-polarity organic solvent isopropanol (IPA) at a weight ratio of 1:1, and the concentration of graphene was 0.1 mg·mL -1 , ultrasonically dispersed at room temperature for 1 h to obtain a uniform and stable graphene suspension; a polished stainless steel plate was used as the positive electrode (5 cm × 2 cm...

Example Embodiment

[0029] Example 2

[0030] The device is attached figure 2 b.

[0031] The lateral dimension prepared by chemical peeling method is 500nm~1μm, the number of layers is 1~3 (thickness is about 0.8~2.3nm), and the conductivity is 1×103 S / cm graphene as raw material, graphene and Mg(NO 3 ) 2 It was added to the low-polarity organic solvent isopropanol (IPA) at a weight ratio of 2:1, and the concentration of graphene was 0.2 mg·mL -1 , ultrasonically dispersed at room temperature for 2 h to obtain a uniform and stable graphene suspension; a polished stainless steel plate was used as the positive electrode (5 cm × 2 cm × 2 mm), and a conductive glass (2 cm × 1 cm × 2 mm) as the negative electrode, the distance between the positive and negative electrodes is 10 mm, the operating voltage is 150 V, and the electrophoretic deposition time is 2 min to prepare a graphene film with a thickness of about 1 μm; the electrophoretic deposition film (1 cm × 1 cm × 2 mm) is used as a cold Cat...

Example Embodiment

[0033] Example 3

[0034] The device is attached figure 2 b.

[0035] The lateral dimension prepared by chemical peeling method is 500nm~1μm, the number of layers is 1~3 (thickness is about 0.8~2.3nm), and the conductivity is 1×10 3 S / cm graphene as raw material, graphene and MgCl 2 It was added to the low-polarity organic solvent dimethylformamide (DMF) at a weight ratio of 1:1, and the concentration of graphene was 0.1 mg·mL -1 , ultrasonic dispersion at room temperature for 1 h to obtain a uniform and stable graphene suspension; a polished stainless steel plate is used as the positive electrode (5 cm × 2 cm × 2 mm), and a conductive glass (2 cm × 1 cm) is covered with an indium tin oxide (ITO) coating with a thickness of 200 μm. ×2mm) is the negative electrode, the distance between the positive and negative electrodes is 5mm, the operating voltage is 100V, the electrophoretic deposition time is 2min, and a graphene film with a thickness of about 0.5 μm is prepared; Cat...

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Abstract

The invention relates to the field of field emission electronic materials, in particular to a preparation method of a graphene thin film field emission material. The method comprises the following steps of: (1) uniformly dispersing graphene and metal cation inorganic salt capable of providing charges into an low polar organic solvent or directly dispersing the graphene into an aqueous solution of an ionic surfactant by adopting an ultrasonic method to prepare a stable graphene solution with charges; and (2) orderly depositing the graphene with the charges on a conductive substrate under the action of an external electric field by utilizing an electrophoretic deposition method to prepare a graphene film. The field emission material of the invention is an even and compact graphene film rich in graphene sheets perpendicularly to the plane. The method has the advantages of simple operation, low cost and good controllability and is suitable for preparing large-area graphene films, and the excellent field emission characteristics of the graphene film lay the foundation for applying the graphene film as a cold cathode material to high-performance field emission displays, and the like.

Description

Technical field: [0001] The invention relates to the field of field emission electronic materials, and in particular provides a preparation method of a graphene film field emission material. Background technique: [0002] Traditional field electron emission materials are usually molybdenum, tungsten, silicon, etc., and the critical emission threshold is as low as 30-50V / μm, and the chemical stability of the electrode material is poor, so the working environment must reach ~10 -8 Pa ultra-high vacuum, high manufacturing cost. With the continuous development of high-tech fields such as electronic communication, the demand for field emission materials with excellent performance is increasingly urgent. [0003] Carbon nanotubes have a large aspect ratio, low work function, good electrical conductivity and nanoscale tips, which can emit electrons for a long time at a relatively low voltage, so they are recognized as an excellent field emission material. . In the past 10 years,...

Claims

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Application Information

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IPC IPC(8): C25D13/02
CPCC25D13/02
Inventor 成会明任文才吴忠帅裴嵩峰汤代明高力波刘碧录李峰刘畅
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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