Method for preparing VO2 thin film

Abstract

The invention discloses a method for preparing a VO2 thin film. The method comprises the following steps that the surface of an Al2O3 substrate is subjected to deionized water cleaning by an ultrasonic cleaning instrument, then an acetone solution and absolute ethyl alcohol are sequentially used for cleaning, and blow-drying is carried out; the cleaned Al2O3 monocrystalline substrate was transferred to a high vacuum growth chamber, and the vacuum was evacuated to better than 1*10<-6> Pa, and the substrate was rotated and was heated to 610 DEG C to 630 DEG C; after the metal vanadium powder isheated to an evaporation state, a gas activation source is opened and oxygen is introduced, the vanadium atomic beam and the active oxygen atomic beam are sprayed on the substrate for reaction, and the film growth time is 34-36 min; after the film deposition is completed, N2 is introduced, the temperature of the vacuum chamber is naturally cooled below 150 DEG C, and the thin film is taken out. According to the method, the VO2 thin film with a smooth surface and a light yellow semi-transparent shape is prepared, the film is good in crystallization, high in purity, uniform and compact in surface, and good in mid-infrared modulation characteristic.

Description

technical field [0001] The present invention relates to a kind of preparation VO 2 thin film method. Background technique [0002] VO 2 It is a functional material with phase transition properties, and its phase transition temperature is close to room temperature, about 68°C. Around the phase transition temperature, VO 2 The bandgap width of the material will change, an insulator-metal phase transition will occur, and many physical parameters of the material, such as refractive index, infrared transmittance, resistivity, etc. will change, which is manifested in optical and electrical physics before and after the phase transition on a macroscopic level. Mutations in properties are current research hotspots. People can design energy-saving glass for green buildings that can resist high-temperature infrared rays by using the characteristics of a large decrease in infrared transmittance before and after phase transition, and can also be used in the field of laser protection....

AI Technical Summary

Problems solved by technology

already reported VO 2 Thin film preparation methods include vacuum evaporation method, magnetron sputtering method, pulsed laser deposition method and some chemical methods, such as sol-gel method, etc. These reports have successfully prepared VO with phase change characteristics. 2 However, due to the different principles and processes of various methods, the quality of the film is not ideal, mainly reflected in the low crystallinity of the film and the substrate, insufficient uniformity and compactness, inability to grow in large areas, and insufficient film components. Pure etc.