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Preparation method of plane phase-change memory

A memory and planar phase technology, applied in the micro-nano field, can solve the problems of long cycle time and high cost, and achieve the effects of convenient preparation, simple structure, and improved integration

Inactive Publication Date: 2012-07-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the methods for obtaining small sizes mainly include electron beam lithography (EBL), focused ion beam lithography (FIB), etc., but they are either too long in cycle or too expensive

Method used

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  • Preparation method of plane phase-change memory
  • Preparation method of plane phase-change memory
  • Preparation method of plane phase-change memory

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preparation example Construction

[0043] see Figure 1 to Figure 10 Shown, the preparation method of a kind of planar phase-change memory of the present invention comprises the following steps:

[0044] Step 1: On the substrate 101, a layer of electrothermal insulating material layer 102, phase change material layer 103 and base material layer 104 are sequentially grown; the electrothermal insulating material 102 can be oxide, nitride, sulfide or made of Any one of a mixture of at least two of oxides, nitrides, and sulfides; the growth of a layer of electrothermal insulating material 102 on the substrate 101 can be done by sputtering, evaporation, or plasma-assisted deposition method, chemical vapor deposition method, metal-organic compound thermal decomposition method, laser-assisted deposition method and thermal oxidation method; the electrothermal insulation material 102, for the wet removal of the base material layer 103 in step 5 The etchant used during the process has corrosion resistance; the phase chang...

Embodiment 1

[0057] 1. Using semiconductor or insulating materials such as monocrystalline silicon wafers and SOI wafers as the substrate 101;

[0058] 2. Using a thin film preparation process, prepare 200nm silicon nitride on the substrate as the electric thermal insulation layer 102, 100nmGe 2 Sb 2 Te 5 As the phase change material layer 103 and 450nm polysilicon as the base material layer 104;

[0059] 3. Remove the four sides of the base material layer 104 by photolithography and dry etching to form a pattern as the base for preparing side walls;

[0060] 4. Deposit 200nm SiO on the top of the electrothermal insulating material layer 102 and the surface and sides of the phase change material layer 103 2 As the side wall material layer 105;

[0061] 5. Use dry etching back to remove the upper surface of the base material layer 104 and the sidewall material layer 105 on the surface of the phase-change material layer 103 to form SiO with a height of 450nm and a width of 100nm. 2 Side...

Embodiment 2

[0069] see Figure 1 to Figure 10 As shown, the preparation method of a planar phase change memory of the present invention is roughly the same as that of Embodiment 1, the difference is that the base material layer 104 is SiO 2 , the corresponding etching solution is hydrofluoric acid; the side wall material layer 105 is Si x N y .

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Abstract

The invention relates to a preparation method of a plane phase-change memory, comprising the following steps: an electric heating insulating material layer, a phase-change material layer and a substrate material layer are sequentially grown on a substrate; four sides of the substrate material layer are removed to form a graph to be used as a substrate for preparing a side wall; side wall materiallayers are deposited on the upper surface of the phase-change material layer, and the surface and the side surface of the substrate material layer, the side wall material layers on the upper surface of the substrate material layer and the surface of the phase-change material layer are removed to form a side wall; the substrate material layer is removed, and only the side wall with a nano size is kept; except the bottom part of the side wall, all phase-change materials are removed; a metal layer for manufacturing electrodes is lap-jointed on one edge of the side wall; a layer of the insulatingmaterial layer is prepared on the metal layer; the surface is polished until the metal surface on the electric heating insulating material layer is ground, so as to cut the metal layer to form an nano-gap electrode interlaid with the phase-change material layer in the middle; and finally, an insulating material layer is deposited on the nano-gap electrode, hole boring is carried out on metal at two sides of the nano-gap electrode, so as to form the plane phase-change memory.

Description

technical field [0001] The invention relates to the field of micro-nano technology, in particular to a preparation method of a planar phase-change memory. The invention proposes a method for preparing a planar phase-change memory by adopting side wall technology, wet etching method and chemical mechanical polishing (CMP). This method avoids the disadvantages of high cost and long cycle of electron beam exposure as far as possible, and the preparation method is simple and controllable. It has great advantages in breaking through the limitation of lithography resolution and improving the preparation efficiency of planar phase change memory. . Background technique [0002] Since the memory came out, it has occupied an increasingly important position in the semiconductor industry. Memory accounts for 80% of the global semiconductor market. Moreover, with the continuous development and demand of the information industry, the development of memory is also undergoing rapid chang...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 张加勇王晓峰马慧莉程凯芳王晓东杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI