Method for manufacturing gallium nitride series compound semiconductor

Abstract

The invention provides a method for manufacturing a gallium nitride series compound semiconductor, and in particular relates to a method for forming a transition layer by forming a wet layer and nitriding the wet layer on a zinc oxide series semiconductor layer. The method has the effect of protecting the surface of the zinc oxide series semiconductor layer, and the transition layer is also used as a buffer layer for subsequent epitaxial growth of a gallium nitride series semiconductor layer, so crystallization quality of the gallium nitride series semiconductor layer can be effectively improved.

Description

1. Technical field [0001] The invention relates to a method for manufacturing gallium nitride-based compound semiconductors, in particular, adding a transition layer between the gallium nitride-based semiconductor layer and the zinc oxide-based semiconductor layer, thereby improving the performance of the gallium nitride-based semiconductor The crystalline quality of the layer. 2. Background technology [0002] In today's light-emitting components, gallium nitride-based compound semiconductor materials are very important wide-bandgap materials, which can be applied to light-emitting components from green light, blue light to ultraviolet light. However, the bulk GaN compound semiconductor has always been an insurmountable technical bottleneck, so it is impossible to manufacture large-scale substrates in large quantities and effectively reduce manufacturing costs. However, although the technology of using sapphire or silicon carbide as the substrate to epitaxially grow GaN-ba...

AI Technical Summary

Problems solved by technology

However, gallium nitride compound semiconductors that form bulk materials have always been an insurmountable bottleneck in technology, so it is impossible to manufacture large-scale substrates in large quantities and effectively reduce manufacturing costs

However, although the technology of using sapphire or silicon carbide as the substrate to epitaxially grow GaN-based layers on the substrate has been widely and commercially used, due to the lattice mismatch between the sapphire and silicon carbide substrates and GaN Therefore, the prepared GaN-based layer still has a relatively high defect density, especially when applied to light-emitting components, which will lead to the inability to improve the luminous efficiency and electron migration speed, so this technology has its disadvantages

[0003] According to the known technology, in order to solve the shortcomings of the high defect density of the above-mentioned gallium nitride-based layer manufacturing method, US Patent No. 6,252,261 discloses the use of lateral epitaxy (ELOG) to reduce the defect density of the gallium nitride layer. This method The system first uses photomask lithography and etching processes to form a patterned silicon dioxide layer on the sapphire substrate, and then controls the complexity of Selectively Epitaxy by Metal Organic Chemical Vapor Deposition (MOCVD) In this way, the defect density can be effectively reduced to less than 1×107cm-2, but the growth thickness of this method must reach more than 10μm, so the production cost is relatively high, so it still has its disadvantages

[0004] In addition, U.S. Patent No. 7125736 once disclosed a patterned sapphire substrate directly on the sapphire substrate combined with lateral epitaxy technology. Although the technology disclosed in this patent can effectively reduce the The defect density is below 1×108cm-2, but the disadvantage is that the uniformity and density of the concave-convex patterning are not easy to control, which makes it difficult to control the production yield

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