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Method for enhancing electric pumping random hot shot of ZnO film

A technology of electric pumping and thin film, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of weak random lasing of zinc oxide thin film electric pumping, and achieve the effect of enhanced strength and strong operability

Inactive Publication Date: 2013-01-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a method for enhancing the electrical pumping random lasing of the ZnO thin film, which solves the problem that the electrical pumping random lasing of the existing ZnO thin film is weak

Method used

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  • Method for enhancing electric pumping random hot shot of ZnO film
  • Method for enhancing electric pumping random hot shot of ZnO film
  • Method for enhancing electric pumping random hot shot of ZnO film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0021] 1) Clean N-type silicon wafer , Silicon chip resistivity is 0.005 ohm·cm, size is 15×15mm 2 , A silicon wafer with a thickness of 675 microns is cleaned and placed in the reaction chamber of the DC reactive magnetron sputtering device. The vacuum of the reaction chamber is pumped to 1×10 -3 Pa; Reactive DC sputtering is used to deposit a ZnO film with a thickness of about 120nm on the silicon wafer. It is then heat-treated at 900°C for 5 minutes in an oxygen atmosphere. The comparative ZnO film was heat-treated at 750°C for 1 hour in an oxygen atmosphere.

[0022] 2) Combine tetraethyl orthosilicate (TEOS): ethanol (EtOH): H 2 A precursor solution composed of O=1:10:4 (molar ratio) (with an appropriate amount of HCl added as a catalyst) was spin-coated on the ZnO film, then dried at 100°C for 15 minutes, and then heat-treated at 500°C in an air atmosphere1 The thickness of the finally formed silicon oxide film is about 30nm.

[0023] 3) Sputtering about 20nm thick semi-tra...

Embodiment 2

[0027] 1) Clean N-type silicon wafer , Silicon chip resistivity is 0.005 ohm·cm, size is 15×15mm 2 , A silicon wafer with a thickness of 675 microns is cleaned and placed in the reaction chamber of the DC reactive magnetron sputtering device. The vacuum of the reaction chamber is pumped to 1×10 -3 Pa; Reactive DC sputtering is used to deposit a ZnO film with a thickness of about 120nm on the silicon wafer. It is then heat-treated at 1100°C for 1 minute in an oxygen atmosphere. The comparative ZnO film was heat-treated at 750°C for 1 hour in an oxygen atmosphere.

[0028] 2) Combine tetraethyl orthosilicate (TEOS): ethanol (EtOH): H 2 A precursor solution composed of O=1:10:4 (molar ratio) (with an appropriate amount of HCl added as a catalyst) was spin-coated on the ZnO film, then dried at 100°C for 15 minutes, and then heat-treated at 500°C in an air atmosphere1 The thickness of the finally formed silicon oxide film is about 30nm.

[0029] 3) Sputtering about 20nm thick semi-tra...

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Abstract

The invention discloses a method for enhancing electric pumping random hot shot of a ZnO film, which comprises the following steps of: attaching the ZnO film to a substrate, and heating for 1 to 5 minutes at the temperature of between 900 and 1,100 DEG C. The invention also discloses a method for manufacturing an electric pumping random hot shot device of a silicon-based ZnO film, which comprisesthe following steps of: growing the ZnO film on the front of the silicon substrate, heating for 1 to 5 minutes at the temperature of between 900 and 1,100 DEG C, preparing a SiO2 film on the ZnO filmby using a sol-gel method, and sputtering Au electrodes on the back of the silicon substrate and the SiO2 film. The ZnO film is heated in the method, so that the strength of electric pumping random hot shot is remarkably enhanced, and the operability is stronger.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, and in particular to a method for enhancing the electric pumping random lasing of a ZnO thin film. Background technique [0002] Zinc oxide (ZnO) is an important direct wide bandgap semiconductor material with a band gap of 3.37ev at room temperature. Because of its abundant raw materials, low cost, non-toxic and non-polluting, and high room temperature exciton binding energy (about 60 meV), it is considered to be a new generation of short-wavelength luminescent material that may replace gallium nitride (GaN). It has attractive application prospects in the fields of semiconductor lighting, flat display and ultraviolet light detection. [0003] Because ZnO film has a higher refractive index and stronger optical gain, it is an ideal material for preparing ultraviolet random lasers. In 1998, H. Cao et al. first reported the optically pumped random lasing of ZnO thin films (H. Cao, YGZhao, HCOng, S...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/28H01L33/40
Inventor 马向阳田野杨德仁
Owner ZHEJIANG UNIV