Three-laminated-layer thin film solar cell and preparation method thereof

Abstract

The invention relates to a three-laminated-layer thin film solar cell and a preparation method thereof, wherein the three-laminated-layer thin film solar cell comprises a top cell, a middle cell and a bottom cell, wherein each cell comprises a P-type doping layer, an intrinsic layer and an N-type doping layer, and the intrinsic layer of the top cell is an intrinsic nano-silicon film, wherein the crystallite dimension is 2 to 10 nanometers and the crystallization rate is 10 to 20 percent. In the preparation method of the three-laminated-layer thin film solar cell, the intrinsic nano-silicon film is deposited on a boron-doped amorphous silicon carbon layer with a silane-hydrogen mixed gas under the deposition gas pressure of 1.0 to 1.5 Torr at the deposition temperature of 180 to 220 DEG C with the glow power of 15 to 30 watts when the intrinsic layer of the top cell is formed, wherein the silane concentration of the silane is 1 to 5 percent. The three-laminated-layer thin film solar cell and the preparation method thereof can improve the band gap width of the top cell, enlarge the spectrum absorption range of the thin film solar cell, and overcome S-W effect, thus improving the photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a solar battery technology, in particular to a triple-junction stacked solar thin film battery and a preparation method thereof. Background technique [0002] At present, with the shortage of energy supply, solar cells that directly convert solar energy into electrical energy have attracted more and more attention. [0003] Commonly used solar cells generally include monocrystalline silicon solar cells, polycrystalline silicon solar cells, amorphous silicon solar cells, and multi-component solar cells according to material classification. Among them, compared with monocrystalline silicon and polycrystalline silicon solar cells, the manufacturing process of amorphous silicon solar cells is greatly simplified, the consumption of silicon materials is small, the power consumption is lower, and it can also generate electricity under weak light conditions. [0004] figure 1 It is a structural schematic diagram of an amorphous silic...

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Problems solved by technology

[0009] However, the inventor found the following defects in the prior art during the research of the present invention: when the traditional amorphous silicon is used as the intrinsic layer of the top cell, since its bandgap width is only 1.7 eV, the wavelength of light absorbed mainly Concentrated at 400-800nm, very little absorption of light with a wavelength of less than 400nm, so that solar thin-film cells cannot achieve broad-spectrum absorption, and at the same time, amorphous silicon is prone to produce S-W effects, thereby reducing the efficiency of solar thin-film cells

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