Laminated organic light emitting diode and preparation method thereof

A light-emitting diode and organic technology, applied in organic chemistry, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as increased brightness and current efficiency, increased voltage, and no improvement in the power efficiency of stacked organic light-emitting diodes. Increased brightness and current efficiency, reduced operating voltage, and improved power efficiency

Inactive Publication Date: 2011-07-20
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still an important problem with stacked OLEDs, that is, the multiplication of brightness and current efficiency comes at the same time as the multip

Method used

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  • Laminated organic light emitting diode and preparation method thereof
  • Laminated organic light emitting diode and preparation method thereof
  • Laminated organic light emitting diode and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0042] The invention also discloses a method for preparing the laminated organic light emitting diode, which includes:

[0043] At least two light-emitting layers are evaporated between the anode and the cathode;

[0044] A charge generating layer is vapor-deposited between adjacent light-emitting layers, the charge generating layer is a heterojunction formed by an n-type organic semiconductor and a p-type organic semiconductor, the p-type organic semiconductor is a thiophene compound, and the p-type organic semiconductor The highest occupied molecular orbital energy level of the semiconductor is less than 6 eV, and the difference between the highest occupied molecular orbital energy level of the p-type organic semiconductor and the lowest unoccupied molecular orbital energy level of the n-type organic semiconductor is less than 1 eV.

[0045] The substrate is preferably a glass substrate or a flexible substrate, and the flexible substrate is preferably a polycarbonate flexible subst...

Example Embodiment

[0052] Example 1

[0053] Photoetch the anode layer ITO on the ITO glass into a thin strip of electrode, then clean it, dry it with nitrogen, treat it with oxygen plasma for 2 minutes and transfer it to the vacuum coating system;

[0054] The vacuum degree in the vacuum coating system reaches 5×10 -4 When Pa, 4.5nm MoO was deposited on the ITO electrode in turn 3 Hole injection layer, 90nm NPB hole transport layer, 30nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 Electron transport layer, 1nm LiF electron injection layer, 20nm C 60 n-type organic semiconductor, 10 nanometer NaT3p-type organic semiconductor, 3 nanometer MoO 3 Hole injection layer, 50 nm NPB hole transport layer, 30 nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 Electron transport layer, 1 nanometer electron injection layer LiF, 120 nanometer metal cathode Al, where the positive and negative electrodes intersect each other to form the light-emitting area of ​​th...

Example Embodiment

[0056] Example 2

[0057] Photoetch the anode layer ITO on the ITO glass into a thin strip of electrode, then clean it, dry it with nitrogen, treat it with oxygen plasma for 2 minutes and transfer it to the vacuum coating system;

[0058] The vacuum degree in the vacuum coating system reaches 5×10 -4 When Pa, 4.5nm MoO was deposited on the ITO electrode in turn 3 Hole injection layer, 120nm NPB hole transport layer, 30nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 Electron transport layer, 1nm LiF electron injection layer, 20nm C 60 n-type organic semiconductor, 10 nanometer TNT2p-type organic semiconductor, 3 nanometer MoO 3 Hole injection layer, 50 nm NPB hole transport layer, 30 nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 Electron transport layer, 1 nanometer electron injection layer LiF, 120 nanometer metal cathode Al, where the positive and negative electrodes intersect each other to form the light-emitting area of ​​t...

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Abstract

The embodiment of the invention discloses a laminated organic light emitting diode and a preparation method thereof. In the laminated organic light emitting diode prepared in the invention, a heterojunction formed from an n-type organic semiconductor and a p-type organic semiconductor is used as a charge generating layer, the p-type organic semiconductor is made from thiophene compounds, the highest occupied molecular orbital energy level of the p-type organic semiconductor is less than 6eV, and the difference of the highest occupied molecular orbital energy level and the lowest occupied molecular orbital energy level of the p-type organic semiconductor is less than 1eV. Compared with the charge generating layer in the prior art, the charge generating layer adopted in the invention can generate a large quantity of charges, thereby ensuring that the prepared laminated organic light emitting diode has a reduced working voltage while the brightness and the current efficiency are increased, and increasing the power efficiency of the laminated organic light emitting diode. Experimental results indicate that the power efficiency of the green fluorescent light laminated organic light emitting diode prepared in the invention is 221m/W.

Description

technical field [0001] The present invention relates to the technical field of organic light emitting diodes, in particular to a stacked organic light emitting diode and a preparation method thereof. Background technique [0002] The display and lighting of organic light-emitting diodes is a popular technology in the flat panel display industry. Compared with inorganic light-emitting diodes, organic light-emitting diodes have a wide range of raw material sources, low driving voltage, high luminous brightness, high luminous efficiency, wide viewing angle, and fast response. Due to the advantages of simple manufacturing process, low cost and easy realization of large-area flexible display, organic light-emitting diodes have developed rapidly in recent years. The Organic Light-emitting Diode OLED (Organic Light-emitting Diode OLED) invented by Deng Qingyun of Kodak Company in 1987 is a double-layer sandwich structure (Deng Qingyun, Wan Silaike, Applied Physics Letters, Issue 51...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56C07D409/04C07D409/14
Inventor 马东阁陈永华田洪坤耿延侯闫东航王利祥
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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