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Laminated organic light emitting diode and preparation method thereof

A light-emitting diode and organic technology, applied in organic chemistry, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as increased brightness and current efficiency, increased voltage, and no improvement in the power efficiency of stacked organic light-emitting diodes. Increased brightness and current efficiency, reduced operating voltage, and improved power efficiency

Inactive Publication Date: 2011-07-20
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still an important problem with stacked OLEDs, that is, the multiplication of brightness and current efficiency comes at the same time as the multiplication of voltage.
Therefore, the power efficiency of stacked OLEDs has not been improved, thereby affecting the application of stacked OLEDs in the field of lighting

Method used

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  • Laminated organic light emitting diode and preparation method thereof
  • Laminated organic light emitting diode and preparation method thereof
  • Laminated organic light emitting diode and preparation method thereof

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preparation example Construction

[0042] The invention also discloses a method for preparing a laminated organic light emitting diode, comprising:

[0043] evaporating at least two light-emitting layers between the anode and the cathode;

[0044] A charge generation layer is vapor-deposited between adjacent light-emitting layers, the charge generation layer is a heterojunction formed by an n-type organic semiconductor and a p-type organic semiconductor, the p-type organic semiconductor is a thiophene compound, and the p-type organic semiconductor The highest occupied molecular orbital energy level of the semiconductor is less than 6eV, and the difference between the highest occupied molecular orbital energy level of the p-type organic semiconductor and the lowest unoccupied molecular orbital energy level of the n-type organic semiconductor is less than 1eV.

[0045] The substrate is preferably a glass substrate or a flexible substrate, and the flexible substrate is preferably a polycarbonate flexible substrate...

Embodiment 1

[0053] The anode layer ITO on the ITO glass is photolithographically formed into thin strip electrodes, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and then transferred to the vacuum coating system;

[0054] Wait until the vacuum degree in the vacuum coating system reaches 5×10 -4 4.5 nm MoO was sequentially deposited on the ITO electrode 3 Hole injection layer, 90nm NPB hole transport layer, 30nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 Electron transport layer, 1nm LiF electron injection layer, 20nm C 60 n-type organic semiconductor, 10nm NaT3p-type organic semiconductor, 3nm MoO 3 Hole injection layer, 50nm NPB hole transport layer, 30nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 An electron transport layer, an electron injection layer of 1 nanometer LiF, and a metal cathode Al of 120 nanometers, wherein the positive and negative electrodes intersect each other to form a ligh...

Embodiment 2

[0057] The anode layer ITO on the ITO glass is photolithographically formed into thin strip electrodes, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and then transferred to the vacuum coating system;

[0058] Wait until the vacuum degree in the vacuum coating system reaches 5×10 -4 4.5 nm MoO was sequentially deposited on the ITO electrode 3 Hole injection layer, 120nm NPB hole transport layer, 30nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 Electron transport layer, 1nm LiF electron injection layer, 20nm C 60 n-type organic semiconductor, 10nm TNT2p-type organic semiconductor, 3nm MoO 3 Hole injection layer, 50nm NPB hole transport layer, 30nm C545T doped in Alq 3 Light-emitting layer composed of medium, 30nm Alq 3 An electron transport layer, an electron injection layer of 1 nanometer LiF, and a metal cathode Al of 120 nanometers, wherein the intersecting parts of the positive and negative electrodes form a l...

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Abstract

The embodiment of the invention discloses a laminated organic light emitting diode and a preparation method thereof. In the laminated organic light emitting diode prepared in the invention, a heterojunction formed from an n-type organic semiconductor and a p-type organic semiconductor is used as a charge generating layer, the p-type organic semiconductor is made from thiophene compounds, the highest occupied molecular orbital energy level of the p-type organic semiconductor is less than 6eV, and the difference of the highest occupied molecular orbital energy level and the lowest occupied molecular orbital energy level of the p-type organic semiconductor is less than 1eV. Compared with the charge generating layer in the prior art, the charge generating layer adopted in the invention can generate a large quantity of charges, thereby ensuring that the prepared laminated organic light emitting diode has a reduced working voltage while the brightness and the current efficiency are increased, and increasing the power efficiency of the laminated organic light emitting diode. Experimental results indicate that the power efficiency of the green fluorescent light laminated organic light emitting diode prepared in the invention is 221m / W.

Description

technical field [0001] The present invention relates to the technical field of organic light emitting diodes, in particular to a stacked organic light emitting diode and a preparation method thereof. Background technique [0002] The display and lighting of organic light-emitting diodes is a popular technology in the flat panel display industry. Compared with inorganic light-emitting diodes, organic light-emitting diodes have a wide range of raw material sources, low driving voltage, high luminous brightness, high luminous efficiency, wide viewing angle, and fast response. Due to the advantages of simple manufacturing process, low cost and easy realization of large-area flexible display, organic light-emitting diodes have developed rapidly in recent years. The Organic Light-emitting Diode OLED (Organic Light-emitting Diode OLED) invented by Deng Qingyun of Kodak Company in 1987 is a double-layer sandwich structure (Deng Qingyun, Wan Silaike, Applied Physics Letters, Issue 51...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56C07D409/04C07D409/14
Inventor 马东阁陈永华田洪坤耿延侯闫东航王利祥
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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