Mutual non-solid-solution system metal infiltration process and device based ion implantation radiation damage
A technology of mutual insolubility and radiation damage, which is applied in the field of metal surface processing
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[0057] The present invention is described in detail in conjunction with the embodiments and the accompanying drawings.
[0058] figure 1 It is a schematic diagram of silver ion implantation tungsten metal device, in which, 1-ion source, 2-ion beam, 3-implantation chamber, 4-tungsten metal sample, 5-target disc, 6-vacuum diffusion pump, 7-maintenance pump, 8- Mechanical pump, 9-high pressure and system control cabinet. The components of the ion implanter include ion source, vacuum implantation chamber, target plate, vacuum system, high voltage and control cabinet. Among them, the vacuum system is composed of a diffusion pump, a maintenance pump and a mechanical pump. The vacuum system is directly connected to the vacuum injection chamber through a valve; the target disk is located in the injection chamber; the ion source is located above the injection chamber and is obliquely opposite to the target disk. During implantation, the ion source is supplied with arc voltage, trigge...
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