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Process for manufacturing photovoltaic bypass Schottky diode

A technology of Schottky diode and manufacturing process, which is applied in the direction of photovoltaic power generation, semiconductor/solid-state device manufacturing, circuit, etc., can solve the problems of large heat generation of diodes, thermal breakdown of diodes, large forward voltage drop of diodes, etc., and achieve reduction Stress damage, good thermal conductivity, good compressive strength

Inactive Publication Date: 2011-08-03
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reason is that the forward voltage drop of the diode is too large, the diode itself generates a lot of heat, and the heat dissipation effect of the junction box is not good, resulting in the thermal breakdown of the diode and the phenomenon of burning the junction box.

Method used

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Embodiment Construction

[0027] The present invention is further described below:

[0028] The manufacturing process of photovoltaic bypass Schottky diodes, the process steps are as follows:

[0029] 1) Place the lead wires on the positioning fixture for alignment, and perform a positioning and alignment of the lead wires to facilitate subsequent processing actions.

[0030] 2) Tempering the leads, the tempering is high-temperature tempering, the tempering temperature is between 490°C and 500°C, and the temperature drop slope of the tempering furnace is controlled at 5°C / min, and the heating time The ratio between the cooling time and the cooling time is 1:2. The set high temperature tempering is used to adjust the stress of the lead wire, so that the lead wire has a longer service life, the stress in the lead wire is small, and it is also convenient for subsequent upsetting operations.

[0031] 3) Position and fix the solder tabs and chips on the fixture and perform welding to obtain a semi-finished...

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Abstract

The invention belongs to the production process for diodes, particularly relates to a process for manufacturing a photovoltaic bypass Schottky diode. The process is characterized in that through improving the compositions of a black-filled compound adopted in the process of casting and mould pressing, improving the production process for schottky diodes, carrying out tempering and diameter increase on leads and carrying out upsetting processing on the ends of the leads, the stress in the lead is reduced, the heat dissipation capacity of the lead is improved, and the surge current impact resistant capacity of the diode is improved; and because the black-filled compound with a high heat conductivity and a low stress is adopted, the heat-conducting property of the schottky diode is improved, and the surface temperature of the diode is reduced, so that the schottky diode can meet the requirements for being used in junction boxes.

Description

technical field [0001] The invention belongs to the production process of diodes, in particular to a production process of photovoltaic bypass Schottky diodes. Background technique [0002] Photovoltaic bypass diodes are mainly used in the junction box of solar cell modules to protect the normal operation of solar cell panels. When the solar cell is normally illuminated, the photovoltaic diode works in the reverse cut-off state. At this time, it does not protect the battery component, and the solar cell component is often installed outdoors or in a relatively open place far away from the city. When the solar cell When one or several cells in the module are blocked by other objects (such as bird droppings, tree shade, etc.) for a long time, the blocked solar cells will seriously heat up or even burn out. This is the "hot spot effect". This effect can cause serious damage to solar cells. Some or all of the energy generated by the illuminated cell may be dissipated by the sha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/56H01L21/60H01L23/373H01L31/048
CPCH01L2924/0002Y02E10/50
Inventor 李健
Owner CHANGZHOUSR SEA ELECTRONICS
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