Chemical amplification type i-linear positive photoresist composition containing 2,1,4-diazo naphthoquinone sulphonic acid phenolic ester
A photoresist and chemical amplification technology, which is applied in the field of polymer photosensitive imaging materials, can solve the problems of large conjugated structure and chemical amplification i-line photoresist system, which are rarely reported and difficult
Inactive Publication Date: 2012-10-10
BEIJING NORMAL UNIVERSITY
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Problems solved by technology
However, preparing a photoacid generator with an absorption peak near the i-line (365nm) requires the introduction of a large conjugated structure, which is a more difficult task.
Therefore, chemically amplified i-line photoresist systems are rarely reported
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[0016] The positive photoresist composition of the present invention is formed by dissolving the polymer (A), the acid generator (B) that generates sulfonic acid by exposure, and other additives (C) in the organic solvent (D).
[0017] In such a positive photoresist composition, when the acid generated by the above-mentioned component (B) acts, the photoresist composition changes from alkali-insoluble to alkali-soluble. Therefore, by selectively exposing the positive photoresist composition coated on the substrate with the help of the mask pattern, the alkali solubility of the exposed area increases, so that it can be developed with dilute alkaline water to obtain a positive image .
[0018] Polymer (A)
[0019] Based on the research on the reaction of various diacids and divinyl ether compounds, we found that certain alicyclic diacids such as rosin diacid (acrylpimaric acid) and aromatic diacids can interact with various divinyl ether compounds The reaction produces a linear ester...
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Abstract
The invention relates to a chemical amplification type i-linear positive photoresist composition. The composition mainly comprises: (A) an N-hydroxyl maleopimaric acid imide ester acetal polymer or a propylene pimaric acid ester acetal polymer; and (B) a 2,1,4-diazo naphthoquinone sulphonic acid phenolic ester sensitizer which is obtained by esterifying 2,1,4-diazo naphthoquinone sulphonic acid chloride and poly-phenol compounds, wherein the sensitizer is subjected to the conventional photolysis of diazo naphthoquinone sulphonic acid ester by illumination and can generate a small amount of sulphonic acids to cause acidolysis of the ester acetal polymer, thereby serving as an acid generation photo-agent. A chemical amplification type positive sensing imaging material has the advantages of high sensitivity and resolution, large contrast, good development tolerance and the like and can be used as a high-performance i-linear positive photoresist for processing an ultra-large-scale integrated circuit.
Description
Technical field [0001] The technical field to which the present invention belongs is the field of polymer photosensitive imaging materials. Specifically, the present invention relates to a new type of i-line chemically amplified positive photoresist composition, which can be used in photoresist (also called photoresist) for VLSI processing and computer for offset printing Direct to plate (CTP) imaging material. Background technique [0002] At present, i-line photoresist is still one of the main photoresist varieties in VLSI processing. The i-line photoresist mainly adopts diazonaphthoquinone sulfonate-phenolic resin system (non-chemically amplified). The imaging principle is that the diazo-naphthoquinone sulfonate decomposes under light conditions, and after molecular rearrangement, indanoic acid is generated, making the exposed area easily soluble in alkaline water, and a positive image is obtained through dilute alkaline water development. This system has the advantages of ...
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IPC IPC(8): G03F7/039G03F7/022
Inventor 王力元徐娜
Owner BEIJING NORMAL UNIVERSITY