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Method for improving appearance of ZnO transparent conductive film

A transparent conductive film and morphology technology, applied in the field of solar cells, can solve the problems of poor surface morphology and light trapping characteristics of ZnO films, and achieve the effects of easy operation, improved light trapping ability, and low cost

Inactive Publication Date: 2011-08-17
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, compared with the U-type SnO:F produced by Japan Asahi Company, the surface morphology of the ZnO film is poor, resulting in poor light-trapping properties of the silicon-based thin-film cells prepared therefrom (see J. Wienke, B. van der Zanden, M. Tijssen, M. Zeman. Performance of spray-deopsited ZnO:In layers as front electrodes in thin-film silicon solar cells. Solar Energy Materials & Solar Cells 92 (2008) 884-890)

Method used

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  • Method for improving appearance of ZnO transparent conductive film

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Experimental program
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Effect test

Embodiment 1

[0021] The ultrasonic spray pyrolysis method was used directly on the glass substrate, zinc acetate was used as the Zn source, water and absolute ethanol were mixed at a ratio of 1:3 as the solvent, and zinc acetate was prepared into a 0.2 mol / L solution. Indium acetate was used as the source of doped indium. Add indium acetate to the zinc acetate solution according to In / Zn=1.5 at.% (atomic percentage), and then add glacial acetic acid to it according to the volume ratio of the zinc acetate solution to glacial acetic acid at 1:0.14. The growth temperature was 470°C. Air was used as the carrier gas, grown for 150 min, and the thickness of the obtained sample was 898 nm. The morphology and optical properties of the obtained ZnO thin film were as follows: Figure 4 , the surface morphology of the obtained ZnO film is relatively smooth, and the grain size and root mean square roughness are obviously smaller, and the scattering effect on light is weaker.

[0022] The surface mor...

Embodiment 2

[0024] Using ultrasonic spray pyrolysis directly on the glass substrate, using zinc acetate as the Zn source, mixing water and absolute ethanol at a ratio of 1:3 as a solvent, and preparing zinc acetate into a 0.2 mol / L solution. Indium acetate was used as the source of doped indium. Add indium acetate to the zinc acetate solution according to In / Zn=1 at.% (atomic percentage), and then add glacial acetic acid to it according to the volume ratio of the zinc acetate solution to glacial acetic acid at 1:0.18. The growth temperature was 470°C. Air was used as the carrier gas, grown for 150 min, and the thickness of the obtained sample was 879 nm. The morphology and optical properties of the obtained ZnO thin film were as follows: Figure 7 , the surface morphology of the obtained ZnO film is triangular block grains, but relatively flat.

[0025] The surface morphology of the glass substrate after being etched with 1% HF for 5 minutes is as follows: figure 2 shown. Afterwards,...

Embodiment 3

[0027] The ultrasonic spray pyrolysis method was used directly on the glass substrate, zinc acetate was used as the Zn source, water and absolute ethanol were mixed at a ratio of 1:3 as the solvent, and zinc acetate was prepared into a 0.2 mol / L solution. Indium acetate was used as the source of doped indium. Add indium acetate to the zinc acetate solution according to In / Zn=1.5 at.% (atomic percentage), and then add glacial acetic acid to it according to the volume ratio of the zinc acetate solution to glacial acetic acid at 1:0.14. The growth temperature was 470°C. Air was used as the carrier gas, grown for 150 min, and the thickness of the obtained sample was 898 nm. The morphology and optical properties of the obtained ZnO thin film were as follows: Figure 4 , the surface morphology of the obtained ZnO film is relatively smooth, and the grain size and root mean square roughness are obviously smaller, and the scattering effect on light is weaker.

[0028] The surface mor...

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Abstract

The invention provides a method for improving appearance of a ZnO transparent conductive film, wherein in the procedure of manufacturing transparent conductive films for film solar batteries by ultrasound spray technology, the surface appearance of a glass substrate is controlled by a chemical method of hydrofluoric acid corrosion, so that the control for the appearance characteristics of the ZnO transparent conductive film generating on the glass substrate is realized. The specific method comprises the steps of: 1) using a HF solution with quality percentage concentration at (0.5-10)% to corrode a glass substrate, wherein the corrosion time is (1-30)min; and 2) generating a doping ZnO transparent conductive film on the glass substrate corroded by the HF solution with an ultrasound spray pyrolytic process. The method of the invention has the advantages of low cost and easy operations; the appearance of the manufactured film can be effectively controlled, so as to control the flocking degree of the film; and the method plays an important role in improving the light trapping capacity of silicon film solar batteries.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for improving the morphology of a ZnO transparent conductive film. Background technique [0002] In recent years, ZnO has been widely used as a transparent conductive film in thin-film solar cells due to its good electrical and optical properties, especially in the hydrogen plasma atmosphere, which is very stable. For silicon-based thin-film solar cells, an efficient light trapping structure (that is, the corresponding textured structure) can increase the optical path of incident light, which is particularly important for improving device performance. [0003] At present, there are many methods for growing ZnO thin films, including pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), radio frequency / DC sputtering (RF / DC Sputtering), electron beam reactive evaporation (EBRE) ) and sol-gel method (Sol-gel), etc....

Claims

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Application Information

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IPC IPC(8): H01L31/18C03C15/00C03C17/23
CPCY02P70/50
Inventor 张晓丹赵颖焦宝臣
Owner NANKAI UNIV