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Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell

A diffusion layer and composition technology, applied in photovoltaic power generation, conductive materials dispersed in non-conductive inorganic materials, circuits, etc., can solve the problems of degradation and shortage of photovoltaic cells

Active Publication Date: 2011-08-31
RESONAC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the coating amount of the paste composition was reduced, the amount of aluminum diffused from the surface of the p-type silicon substrate to the inner part was insufficient
As a result, the desired BSF (Back surface Field) effect (where the collection efficiency of the generated carriers is attributed to p + The effect increased by the presence of the type layer), which leads to the problem that the properties of photovoltaic cells are degraded

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] 20g of B with a nearly spherical particle shape, an average particle size of 4.9 μm and a softening point of 561°C 2 o 3 -SiO 2 -R 2 O(R: Na, K, Li)-based glass powder (trade name: TMX-404, manufactured by Tokan Material Technology Co., Ltd.), 0.5 g of ethyl cellulose and 10 g of 2-(2-butoxyl acetate) Ethoxy)ethyl ester was mixed with an automatic mortar kneader and made into a paste to prepare a composition for forming a p-type diffusion layer.

[0084] The particle shape of the glass powder was judged by observation using a scanning electron microscope (trade name: TM-1000, manufactured by Hitachi High-Technologies Corporation). The particle diameter of the glass powder is calculated with a laser scattering particle size analyzer (measurement wavelength: 632 nm, trade name: LS 13320, manufactured by Beckman Coulter, Inc.). The softening point of the glass powder was measured by a differential thermal analysis (DTA) curve using a Thermogravimetry Differential Therm...

Embodiment 2

[0089] In addition to changing the glass powder to B with a spherical particle shape, an average particle size of 3.2 μm, and a softening point of 815°C 2 o 3 -SiO 2-Except for RO (R: Mg, Ca, Sr, Ba)-based glass powder (trade name: TMX-603, produced by Tokan Material Technology Co., Ltd.), p-type was formed in the same manner as in Example 1 diffusion layer. The surface on the side coated with the composition for forming a p-type diffusion layer exhibited a sheet resistance of 35Ω / □ and formed a p-type diffusion layer by diffusion of B (boron).

Embodiment 3

[0091] In addition to changing the glass powder to B with a spherical particle shape, an average particle size of 5.1 μm, and a softening point of 808°C 2 o 3 -SiO 2 - RO (R: Mg, Ca, Sr, Ba) based glass powder (trade name: TMX-403, produced by Tokan Material Technology Co., Ltd.), forming a p-type diffusion layer in the same manner as in Example 1 . The surface on the side coated with the composition for forming a p-type diffusion layer exhibited a sheet resistance of 45Ω / □ and formed a p-type diffusion layer by diffusion of B (boron).

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PUM

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Abstract

The invention provides a composition for forming p-type diffusion layer, a method for forming p-type diffusion layer, and a method for producing photovoltaic cell. The composition enables the formation of a p-type diffusion layer without causing internal stress in a silicon substrate and warpage of the substrate during the process of producing a photovoltaic cell using a silicon substrate. The composition for forming a p-type diffusion layer comprises a glass powder containing an acceptor element and a dispersion medium. The p-type diffusion layer and the photovoltaic cell using the diffusion layer are prepared by applying the composition for forming a p-type diffusion layer and subjecting the resulting product to a heat diffusion treatment.

Description

[technical field] [0001] The present invention relates to a composition for forming a p-type diffusion layer of a photovoltaic cell, a method for forming a p-type diffusion layer, and a method for preparing a photovoltaic cell. More specifically, the present invention relates to a technique for forming a p-type diffusion layer capable of reducing internal stress of a silicon substrate used as a semiconductor substrate, whereby damage to crystal grain boundaries can be suppressed, and crystal Increase of defects and warpage. [Background technique] [0002] The related technical procedures of silicon photovoltaic cells are described below. [0003] First, in order to achieve high efficiency by promoting the optical confinement effect, a p-type silicon substrate on which a textured structure is formed is prepared, and then the p-type silicon substrate is treated with phosphorous oxychloride (POCl 3 ), nitrogen and oxygen mixed gas atmosphere, at a temperature of 800 to 900 ° ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01L21/22H01L31/0224H01L31/18
CPCH01L31/1804H01L21/223H01L31/068H01L21/2225Y02E10/547Y02E10/52Y02P70/50H01L31/02167H01L31/022425H01L31/0392H01L31/056Y02E10/50
Inventor 町井洋一吉田诚人野尻刚冈庭香岩室光则足立修一郎
Owner RESONAC CORP