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Textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film and application

A composite film and suede technology, applied in sustainable manufacturing/processing, ion implantation plating, gaseous chemical plating, etc., can solve problems affecting the performance of silicon thin film batteries, low electron mobility, etc., to reduce free current carrying sub-concentration, absorption reduction, and performance-enhancing effects

Inactive Publication Date: 2012-09-05
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The purpose of the present invention is to solve the problem of free carrier absorption in the near-infrared region caused by the low electron mobility of ordinary transparent conductive films, thereby affecting the performance of silicon thin film batteries, and to provide a combination of MOCVD technology and magnetron sputtering technology. A method for growing textured BZO / HGZO composite films and applying it to silicon thin film solar cells

Method used

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  • Textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film and application
  • Textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film and application
  • Textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film and application

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Embodiment 1

[0024] A method for preparing a textured structure BZO / HGZO composite film, using MOCVD technology and magnetron sputtering technology to grow a high mobility textured structure BZO / high conductivity HGZO film, the steps are as follows:

[0025] 1) Using MOCVD technology, with the help of high-purity DEZn (purity: 99.995%) and water as source materials, grow doped flow ratio 0.5% B on a glass substrate 2 h 6 Low-doped textured BZO film, substrate temperature 150°C, film thickness 2000nm;

[0026] 2. Using magnetron sputtering technology, with the help of ZnO:Ga 2 o 3 High-purity target (composition purity: 99.99%, dopant content 1.0% by weight) and H 2 As a source material, a high-mobility HGZO film is grown on a glass substrate, the substrate temperature is room temperature, and the film thickness is 300nm.

Embodiment 2

[0028] A method for preparing a textured structure BZO / HGZO composite film, using MOCVD technology and magnetron sputtering technology to grow a high mobility textured structure BZO / high conductivity HGZO film, the steps are as follows:

[0029] 1. Using MOCVD technology, using high-purity DEZn (purity: 99.995%) and water as source materials, grow doped flow ratio 0.5% B on glass substrates 2 h 6 Low-doped textured BZO film, substrate temperature 150°C, film thickness 1000nm;

[0030] 2. Using magnetron sputtering technology, with the help of ZnO:Ga 2 o 3 High-purity target (composition purity: 99.99%, dopant content 1.0% by weight) and H 2 As the source material, a high-mobility HGZO thin film was grown on a glass substrate with a substrate temperature of 200°C and a film thickness of 700nm.

Embodiment 3

[0032] Apply the high-mobility textured glass / textured structure BZO / high conductivity HGZO film obtained above to a pin-type a-Si / μc-Si stacked thin film solar cell, and its solar cell structure is as follows Figure 4 shown. Firstly, a textured structure BZO / high conductivity HGZO thin film is grown on a glass substrate, then a-Si pin top cell and μc-Si pin bottom cell are prepared, and finally ZnO back reflection layer and metal Al layer are grown.

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Abstract

The invention discloses a textured structural ZnO:B (BZO) / ZnO:Ga / H (HGZO) composite thin film, which has a glass / textured structural BZO / high-conductivity HGZO structure, wherein BZO is B-doped ZnO; and HGZO is Ga / H-doped ZnO. In a preparation method for the thin film, the high-mobility textured structural BZO / high-conductivity HGZO thin film is grown by combining a metal organic chemical vapor deposition (MOCVD) technology and a magnetron sputtering technology. The composite thin film can be applied to a pin-type mu c-Si thin film solar cell and an a-Si / mu c-Si laminated thin film solar cell. The textured structural BZO / HGZO composite thin film has the advantages that: the BZO thin film obtained by the MOCVD technology has a textured structure, simultaneously free carrier concentration is effectively reduced under the condition of relatively lower B doping, the electron mobility of the thin film is improved and the absorption of an i near infrared area is reduced; and the HGZO thin film with high conductivity and high electron mobility is grown by the magnetron sputtering technology, and the absorption of the near infrared area in solar spectrum is reduced.

Description

technical field [0001] The invention belongs to the field of silicon thin-film solar cells, in particular to a BZO / HGZO composite thin film with textured structure and its application in solar cells. Background technique [0002] The optical bandwidth of hydrogenated amorphous silicon (a-Si:H) is about 1.7 eV, and its absorption coefficient is higher in the short-wave direction, while the optical bandwidth of hydrogenated microcrystalline silicon (μc-Si:H) is about 1.1 eV, and its absorption coefficient The coefficient is higher in the long-wave direction, and can absorb into the near-infrared long-wave region, and the absorption wavelength can be extended to 1100nm, which makes better use of the solar spectrum. figure 1 The absorption coefficients of a-Si:H and μc-Si:H materials and the corresponding solar spectrum utilization ranges are given. In addition, compared with amorphous silicon thin film materials, microcrystalline silicon thin film materials have a higher degre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0232H01L31/18C23C16/40C23C16/44C23C14/35C23C14/06H01L31/20H01L31/042H01L31/0445H01L31/054
CPCY02E10/52Y02E10/50Y02P70/50
Inventor 陈新亮耿新华王斐闫聪博张德坤孙建魏长春张建军张晓丹赵颖
Owner NANKAI UNIV