Method for growing ZnO-TCO thin film with suede structure and application

A technology of suede and film, which is applied in the field of growing ZnO-TCO film with a suede structure, can solve the problems of poor performance of ZnO film, small suede structure, poor optical transmittance, etc. The effect of improving and good electrical characteristics

Inactive Publication Date: 2011-09-28
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to analyze above-mentioned technology, provide a kind of method for growing ZnO-TCO thin film of textured structure, make the ZnO-TCO thin film of textured structure, high tran

Method used

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  • Method for growing ZnO-TCO thin film with suede structure and application
  • Method for growing ZnO-TCO thin film with suede structure and application
  • Method for growing ZnO-TCO thin film with suede structure and application

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Embodiment 1

[0027] 1. Using magnetron sputtering technology, with the help of high-purity Zn-Al alloy target (component purity: 99.99%, wherein the weight percentage content of the dopant Al component is 2.0%) and O 2 As the raw material, the sputtering gas is Ar gas, and the textured ZnO thin film is directly grown on the glass substrate at low temperature. The substrate temperature is 250°C, and the background vacuum is 8×10 -5 Pa, the sputtering pressure is 4.5mTorr, and the sputtering power density is 1.0W / cm 2 , the thickness of the film is 1500nm, and the film structure obtained by growth is: glass / gradient oxygen flow rate is "moderate flow rate + normal flow rate" and the texture structure Al-doped ZnO film is grown under the condition of "moderate flow rate + normal flow rate". The total number of coating times is 25 cycles, of which the moderate An oxygen flow rate of 12 sccm is 10 cycles, and a normal oxygen flow rate of 9.0 sccm is 15 cycles. Its roughness RMS~70nm. figure...

Embodiment 2

[0030] 1. Using magnetron sputtering technology, with the help of high-purity Zn-Al alloy target (component purity: 99.99%, in which the weight percentage content of the dopant Al component is 1.0%) and O 2 As the raw material, the sputtering gas is Ar gas, and the textured ZnO thin film is directly grown on the glass substrate at low temperature. The substrate temperature is 300°C, and the background vacuum is 8×10 -5 Pa, the sputtering pressure is 4.3mTorr, and the sputtering power density is 0.92W / cm 2 , the thickness of the film is 1500nm, and the film structure obtained by growth is: glass / gradient oxygen flow rate is "large flow rate + moderate flow rate + normal flow rate" and the texture structure Al-doped ZnO film is grown under the condition of 25 coating times in total. Cycle, where the maximum oxygen flow rate of 20 sccm is 5 cycles, the moderate oxygen flow rate of 12 sccm is 10 cycles, and the normal oxygen flow rate of 9.0 sccm is 10 cycles. Its roughness RMS~...

Embodiment 3

[0033] 1. Using magnetron sputtering technology, with the help of high-purity Zn-Al alloy target (component purity: 99.99%, in which the weight percentage content of the dopant Al component is 0.5%) and O 2 As the raw material, the sputtering gas is Ar gas, and the textured ZnO thin film is directly grown on the glass substrate at low temperature. The substrate temperature is 300°C, and the background vacuum is 8×10 -5 Pa, the sputtering pressure is 4.0mTorr, and the sputtering power density is 1.0W / cm 2 , the thickness of the film is 1500nm, and the film structure obtained by growth is: glass / gradient oxygen flow rate is "large flow rate + moderate flow rate + normal flow rate" and the texture structure Al-doped ZnO film is grown under the condition of 25 coating times in total. Cycles, where the maximum oxygen flow rate of 20 sccm is 5 cycles, the moderate oxygen flow rate of 12 sccm is 8 cycles, and the normal oxygen flow rate of 9.0 sccm is 12 cycles. Its roughness RMS~7...

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Abstract

The invention relates to a method for growing a ZnO-TCO thin film with a suede structure, which comprises the following steps of: taking a glass substrate as a substrate, a Zn-AI alloy target with the purity of 99.995% as a target raw material, and Ar gas as sputtering gas; introducing oxygen in the sputtering process, wherein the oxygen flow presents gradient change in the sputter coating cycle;and preparing the ZnO-TCO thin film with the suede structure by using a magnetic control sputter coating technology. The method has the advantages: compared with the ZnO-TCO thin film with the suede structure, obtained through the traditional sputtering technology, the thin film obtained through a gradient oxygen flow method has better transmission rate and maintains better electricity property; in addition, the suede structure of the thin film is obviously improved; and the ZnO-TCO thin film is applied to microcrystalline silicon thin film cells or amorphous silicon/microcrystalline silicon laminating thin film cells, and has the advantages of being capable of improving the light scattering function, prolonging the incidence optical length, effectively reducing the thickness of active layers, and increasing the efficiency and stability of Si-based thin film solar cells.

Description

technical field [0001] The invention belongs to the field of thin film solar cells, in particular to a method and application for growing a textured ZnO-TCO thin film. Background technique [0002] Transparent conductive oxide (TCO) thin film material is an important part of thin film solar cells, see literature A. V. Shah, H. Schade, M. Vanecek, et al. Progress in Photovoltaics 12 (2004) 113, J. Müller , B. Rech, J. Springer, et al. Solar Energy 77 (2004) 917. The most widely used TCO film in thin film batteries is F-doped SnO 2 thin film (SnO 2 :F) and Sn-doped In 2 o 3 Thin film (In 2 o 3 :Sn). F-doped SnO 2 Thin films are usually prepared by atmospheric pressure CVD (APCVD) technology, and the growth temperature is high (~500°C), which will limit its further application for battery materials grown in low temperature deposition and strong H plasma environment, see literature: S. Major, S. Kumar, M. Bhatnagar, et al. Applied Physics Letters 49 (1986) 394. Sn-dope...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08H01L31/0224C23C14/54
Inventor 陈新亮王婓耿新华张德坤魏长春张晓丹赵颖
Owner NANKAI UNIV
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