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Quantum well infrared detector

A technology of infrared detectors and quantum wells, which is applied in semiconductor devices, electrical components, circuits, etc., can solve problems that limit wide application, and achieve the effects of improving detection rate, high response speed, and dark current suppression

Inactive Publication Date: 2011-09-28
无锡沃浦光电传感科技有限公司
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AI Technical Summary

Problems solved by technology

[0003] At present, mainstream infrared detectors in the mid-to-far infrared band, including InSb infrared detectors, HgCdTe infrared detectors, and quantum well infrared detectors, all work at low temperatures (usually lower than 100K), and need to be cooled by liquid nitrogen Dewar or circulating refrigerators , which severely limits their wide application

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Embodiment Construction

[0029] Such as figure 1 As shown, the quantum well infrared detector proposed by the present invention uses GaAs material as the substrate, and utilizes MBE or MOCVD technology to grow the following multilayer structure layer by layer:

[0030] (1) A layer of undoped GaAs buffer layer.

[0031] (2) The n-type doped GaAs lower electrode layer has a thickness of 0.5-10 μm, and the dopant is silicon (Si), and its doping concentration is 0.5-5.0×10 18 cm -3 , such as making the Si doping concentration about 1×10 18 cm -3 .

[0032] (3) The multi-quantum well layer is formed by alternately growing the potential barrier first and the potential well after multiple periods, and the number of periods of the multi-quantum well layer is greater than 20. Among them, each cycle includes an Al x Ga 1-x As barrier layer and a GaAs potential well layer, n-type doping is carried out in the GaAs potential well layer, the dopant is Si, and the doping concentration meets or is close to the...

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Abstract

The invention discloses a quantum well infrared detector, which adopts a GaAs / AlxGa1-xAs material system, is grown by using an MBE (Molecular Beam Epitaxy) or MOCVD (Metal Organic Chemical Vapor Deposition) technology, and is prepared through a standard semiconductor process. A quantum well structure in the invention has special structure parameters, and the doping concentration of silicon impurities of a potential well is higher than 1 x 10<12>cm<-2>, so that the detector can work in a room temperature or standard room temperature state, the absorption coefficient of the detector can reach over 30%, and dark current is inhibited effectively, thus, noise of a device is greatly lowered, the detection rate of the detector can reach or approach theoretical limit value, the response speed of the detector is higher than 1GHz, and the highest response speed of the detector can reach 100GHz.

Description

technical field [0001] The invention relates to a semiconductor infrared optoelectronic device, in particular to a quantum well infrared detector (Quantum Well Infrared Photodetectors, QWIP for short). Background technique [0002] Traditional detectors that are more mature in the mid-infrared to far-infrared bands include indium telluride (InSb) infrared detectors and mercury cadmium telluride (HgCdTe) infrared detectors. In the past thirty years, with the development of low-dimensional material technology, a new technology of quantum well infrared detector has emerged, and has been rapidly developed and widely used. Compared with other infrared technologies, quantum well infrared detectors have the advantages of fast response, high detection rate, adjustable detection wavelength, strong radiation resistance, etc., and can be used by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) ) and other advanced technology growth, it is easy to make a ...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/0352H01L31/0304
Inventor 刘惠春杨耀
Owner 无锡沃浦光电传感科技有限公司