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Method for preparing dopamine-rare earth laminated film on surface of monocrystalline wafer

A monocrystalline silicon wafer and rare earth composite technology, which is applied in the field of micro-electromechanical systems, can solve the problems of difficult recycling and disposal, extended film forming cycle, and economical decline, and achieves the effects of simple configuration, low cost, and simple process methods

Inactive Publication Date: 2011-10-19
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this prior art, it takes 12-14 hours to pretreat the surface of single crystal silicon, which greatly prolongs the entire film-forming cycle and reduces the efficiency.
Moreover, the pretreated aqua regia waste liquid is very destructive to the environment, which brings difficulties to recycling and disposal, and economical decline

Method used

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  • Method for preparing dopamine-rare earth laminated film on surface of monocrystalline wafer
  • Method for preparing dopamine-rare earth laminated film on surface of monocrystalline wafer
  • Method for preparing dopamine-rare earth laminated film on surface of monocrystalline wafer

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Experimental program
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Effect test

Embodiment 1

[0021] 1) Place the single crystal silicon wafer whose surface has been polished by nano-cerium oxide in ethanol, clean it with ultrasonic waves and dry it with nitrogen gas. Prepare a 0.2mM / mL dopamine aqueous solution, adjust the pH value to 8.5 with Tris acid and Hcl solution, soak a 2cm×2cm single crystal silicon in the dopamine solution, and stir magnetically at 10r / min for 2h. The monocrystalline silicon film of dopamine was taken out, washed with deionized water, and dried in vacuum;

[0022] 2) the preparation concentration is 0.3wt.% Lacl 3 solution. Lacl 3 The weight percent of solution components is: 0.3% of rare earth compound, 99.1% of ethanol, 0.5% of ammonium chloride, and 0.1% of nitric acid;

[0023] 3) Put the monocrystalline silicon polydopamine film obtained in step 1) into the rare earth solution for assembly for 20 minutes, take it out, rinse it repeatedly with deionized water, and dry it with nitrogen to obtain the dopamine rare earth composite film. ...

Embodiment 2

[0028] 1) Place the single crystal silicon wafer whose surface has been polished by nano-cerium oxide in ethanol, clean it with ultrasonic waves and dry it with nitrogen gas. Prepare a 0.4mM / mL dopamine aqueous solution, and adjust the pH value to 6 with Tris acid and Hcl solution, soak a 2cmX2cm single crystal silicon in the dopamine solution, and stir magnetically at a speed of 50r / min for 6h. After the stirring is completed, there will be deposited The monocrystalline silicon film of polydopamine was taken out, washed with deionized water, and dried in vacuum;

[0029] 2) the preparation concentration is the Secl of 0.5wt.% 3 solution. Cecl 3 The weight percent of solution components is: 0.5% of rare earth compound, 98.9% of ethanol, 0.3% of ammonium chloride, and 0.3% of nitric acid;

[0030] 3) Put the polydopamine monocrystalline silicon film obtained in step 1) into the rare earth solution for assembly for 60 minutes, take it out, rinse it repeatedly with deionized w...

Embodiment 3

[0035] 1) Place the single crystal silicon wafer whose surface has been polished by nano-cerium oxide in ethanol, clean it with ultrasonic waves and dry it with nitrogen gas. Prepare a 0.5mM / mL dopamine aqueous solution, and adjust the pH value to 8.2 with Tris acid and Hcl solution, soak a 2cmX2cm-sized monocrystalline silicon in the dopamine solution, and stir magnetically at a speed of 70r / min for 4h. After the stirring is completed, there will be deposited The monocrystalline silicon film of polydopamine was taken out, washed with deionized water, and dried in vacuum;

[0036] 2) the preparation concentration is 0.7wt.% La 2 o 3 solution. La 2 o 3The weight percent of solution components is: 0.7% of rare earth compound, 98.1% of ethanol, 0.9% of ammonium chloride, and 0.3% of nitric acid;

[0037] 3) Put the polydopamine monocrystalline silicon film obtained in step 1) into the rare earth solution for assembly for 120 minutes, take it out, rinse it repeatedly with dei...

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Abstract

The invention relates to a method for preparing dopamine-rare earth laminated film on the surface of a monocrystalline wafer, which takes the monocrystalline wafer as a base material, and after dopamine is deposited on the surface of the base material, the monocrystalline wafer deposited with a poly-dopamine film is arranged in rare earth solution for self-assembly to prepare and obtain the dopamine-rare earth laminated film. By virtue of the self-assembly technology, the rare earth film with excellent friction performance can be prepared by taking the dopamine as an intermediate junction body, thus greatly improving the tribological performance of the silicon substrate film.

Description

technical field [0001] The invention relates to a method in the technical field of microelectromechanical systems, in particular to a method for preparing a dopamine-rare earth composite thin film on the surface of a single crystal silicon wafer. Background technique [0002] The continuous penetration of microelectronics technology into the field of machinery has greatly promoted the development of machinery in the direction of miniaturization, and a research boom in micro-electromechanical systems (MEMS) has arisen. Silicon-based materials are widely used in MEMS manufacturing because of their good elastic behavior and etch processability. However, due to its high brittleness, surface cracks are prone to delamination wear under the action of low tensile stress, and silicon-based components are prone to produce micro-sized abrasive particles when they are subjected to repeated frictional contact or when the load exceeds the elastic limit, which is difficult to meet the use ...

Claims

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Application Information

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IPC IPC(8): C04B41/50
Inventor 程先华程海正俞亮孙志永韦山
Owner SHANGHAI JIAO TONG UNIV
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