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II-VI-group diluted oxide semiconductor thin film solar cell

A technology of oxide semiconductor and thin-film solar cells, applied in semiconductor devices, circuits, photovoltaic power generation, etc., can solve the problem of high optical loss

Inactive Publication Date: 2013-05-08
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that this type of solar cell can only use the radiant energy of some wavelength bands of sunlight. Taking monocrystalline silicon solar cells as an example, the optical loss is as high as 53%.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1. ZnSe substrate (S1) pretreatment

[0025] Firstly, the ZnSe wafer (S1) was cleaned with trichlorethylene, acetone, and methanol, blown dry with nitrogen, and then placed in the MBE deposition chamber with BCl 3 (99.999%) plasma etching (power density 1W / cm 2 ), and finally in a vacuum environment for 600 0 C, heat treatment for 10 minutes.

[0026] 2. Deposition of PIN structures

[0027] Substrate (S1) temperature 275 0 C, n-ZnSe:Cl(N) grown by molecular beam epitaxy with a carrier concentration of 1×10 18 / cm 3 , with a thickness of 1000 nm; then deposited a layer of ZnSeO with a thickness of 1000 nm and an atomic percentage of oxygen of 3%; then deposited p-ZnSe:N(P) with a carrier concentration of 1×10 18 / cm 3 , with a thickness of 100 nm.

[0028] 3. Deposition of transition layer (B)

[0029] Subsequently, the transition layer ZnTe is sequentially grown in the deposition chamber 0.1 Se 0.9 and HgSe thin film (B), the thickness of the former ...

Embodiment 2

[0033] 1. ZnSe substrate (S1) pretreatment

[0034] Firstly, the ZnSe wafer (S1) was cleaned with trichlorethylene, acetone, and methanol, blown dry with nitrogen, and then placed in the deposition chamber with BCl 3 (99.999%) plasma etching (power density 1W / cm 2 ), and finally vacuum environment for 600 0 C, heat treatment for 10 minutes.

[0035] 2. Deposition of PIN structures

[0036] Substrate (S1) temperature 275 0 C, The heavily doped layer n-ZnSe:Cl(N) was grown by molecular beam epitaxy, and the carrier concentration was 1×10 18 / cm 3 , with a thickness of 500 nm, followed by a lightly doped layer of n-ZnSe:Cl(N) with a carrier concentration of 1×10 17 / cm 3 , with a thickness of 500 nm; then deposit the intrinsic layer ZnSeO(I) with a thickness of 1000 nm and an atomic percentage of oxygen of 6%; then deposit a lightly doped layer of p-ZnSe:N(P) with a carrier concentration of 4 ×10 17 / cm 3 , with a thickness of 100 nm, followed by a heavily doped lay...

Embodiment 3

[0042] 1. ZnSe substrate (S1) pretreatment

[0043] Firstly, the ZnSe wafer (S1) was cleaned with trichlorethylene, acetone, and methanol, blown dry with nitrogen, and then placed in the deposition chamber with BCl 3 (99.999%) plasma etching (power density 1W / cm 2 ), and finally vacuum environment for 600 0 C, heat treatment for 10 minutes.

[0044] 2. Deposition of PIN structures

[0045] Substrate (S1) temperature 275 0 C, The heavily doped layer n-ZnSe:Cl(N) was grown by molecular beam epitaxy, and the carrier concentration was 1×10 18 / cm 3 , with a thickness of 500 nm, followed by a lightly doped layer of n-ZnSe:Cl(N) with a carrier concentration of 1×10 17 / cm 3 , with a thickness of 500 nm; then deposit the intrinsic layer ZnSeO(I) with a thickness of 1000 nm and an atomic percentage of oxygen of 6%; then deposit p-ZnSe:N(P) with a carrier concentration of 7×10 17 / cm 3 , with a thickness of 100 nm.

[0046] 3. Deposition of transition layer (B)

[0047]...

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Abstract

A II-VI group dilute oxide semiconductor thin-film solar cell belongs to a photovoltaic cell with a new structure. The key point is to use a II-VI diluted oxide semiconductor film (triple band gap material) as the absorbing layer. This diluted oxide semiconductor film is ZnSe (ZnSeO) with a relatively low oxygen doping content, that is, ZnSe1-xOx, 0 <x<0.1. The structure of the solar cell in the present invention is: substrate / functional layer of ZnSe-based PIN structure / transition layer material / electrode. The solar cell with the above structure can better collect and utilize sunlight, increase the width of the depletion layer, and obtain higher photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of new energy materials and devices, in particular to a photovoltaic cell with a new structure. Background technique [0002] Using semiconductor technology to convert solar energy into electrical energy is the most direct way and way to utilize solar energy. Although crystalline silicon solar cells have been widely used, they are still an unimportant supplementary energy source. In order for photovoltaic power generation to become the main way for human beings to obtain electricity in the future, the key is that the cost of photovoltaic power generation should be comparable to that of conventional energy. Improving the conversion efficiency of solar cells is an important way to reduce the cost of photovoltaic power generation. [0003] However, conventional batteries all have one thing in common: the absorber material has only one way of electronic transition (single energy gap eg ). Therefore, the photon energy ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/075H01L31/0296
CPCY02E10/548
Inventor 李卫冯良桓张静全武莉莉
Owner SICHUAN UNIV