Method for making semiconductor device with super junction structure and rapid reverse recovery characteristic
A device manufacturing method and fast recovery technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor reverse recovery characteristics, increased circuit power consumption, and reduced power efficiency, so as to improve cost performance and facilitate batch production Production, easily adjustable effects
Inactive Publication Date: 2011-11-23
WUXI NCE POWER
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Problems solved by technology
Due to the poor reverse recovery characteristics of ordinary super-junction MOSFET devices T2 and T3, a diode D4 and D5 were added to T2 and T3 respectively, although this can be solved to a certain extent because T2 and T3 are prone to The problem of failure due to excessively high Irrm and dv / dt, however, due to the addition of additional devices in the circuit, the power consumption of the entire circuit will also increase, and the efficacy of T2 and T3 will also decrease. This situation is constantly pursuing energy saving Under the development direction of consumption reduction, it is not a good choice
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[0052] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0053] like Figure 2~Figure 9 As shown: taking an N-type semiconductor device as an example, the present invention includes source metal 1, conductive polysilicon 2, P column 3, N column 4, insulating dielectric layer 5, N-type epitaxial layer 6, drain metal 7, and N+ substrate 8. P-type well region 9, N-type source region 10, MOS structure 11, insulating gate oxide layer 12, hard mask window 13, hard mask layer 14, deep trench 15, P-type epitaxial layer 16, high-energy electron line Accelerator 17 , carrying container 18 and semiconductor device 19 .
[0054] In order to obtain a super junction structure semiconductor device with reverse fast recovery characteristics, the manufacturing method of the super junction structure semiconductor device with reverse fast recovery characteristics includes the following steps:
[0055] a. Provide a semiconductor subst...
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The invention relates to a method for making a semiconductor device with a super junction structure and rapid reverse recovery characteristic. The method comprises the following steps of: 1, providing a semiconductor substrate provided with a first conduction type; 2, forming a super junction structure in the semiconductor substrate; 3, obtaining a component region corresponding to the semiconductor device and a surrounding region on a first main surface of the semiconductor substrate with the super junction structure by the conventional semiconductor process; 4, performing electron irradiation on the semiconductor substrate, and bombing the semiconductor device structure by using high-energy electrons; 5, performing high-temperature annealing on the semiconductor device subjected to electron irradiation; 6, thinning a second main surface of the semiconductor substrate subjected to high-temperature annealing; and 7, evaporating or depositing drain electrode metal on the second main surface of the semiconductor substrate subjected to thinning. By the method, the reverse recovery charge Qrr is low, reverse recovery time Trr is short and reverse recovery peak current Irrm is low; moreover, the making process is simple, low in cost and applicable for mass production.
Description
technical field [0001] The invention relates to a manufacturing method of a super-junction semiconductor device, in particular to a manufacturing method of a super-junction semiconductor device with reverse fast recovery characteristics, belonging to the technical field of super-junction semiconductors. Background technique [0002] A well-known semiconductor structure—a super junction structure (Super Junction) is widely used in semiconductor power MOSFET devices, which has the characteristics of high withstand voltage and low on-resistance. The superjunction structure is formed in the drift layer of the device. The drift layer includes columns of N conductivity type (N columns) and columns of P conductivity type (P columns), and a plurality of P-N column pairs formed by alternately adjoining N columns and P columns form a super junction structure. The N column has impurities of N conductivity type, the P column has impurities of P conductivity type, and the impurity amoun...
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IPC IPC(8): H01L21/336H01L21/322H01L21/263
Inventor 朱袁正叶鹏李宗青
Owner WUXI NCE POWER