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Solar collector core with silicon nitride medium selective absorption coating and preparation method

A solar collector and selective absorption technology, applied in the field of solar thermal utilization, can solve the problems of poor weather resistance, unsuitable high-efficiency roll-to-roll or sheet-type step-by-step continuous production, etc., and achieve excellent weather resistance and excellent selective absorption characteristics. , the effect of high production efficiency

Inactive Publication Date: 2013-03-06
浙江优尼特新能源有限公司
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  • Abstract
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Problems solved by technology

[0003] Purpose of the invention: the present invention provides a core film of a flat solar heat collector with a silicon nitride medium selective absorption coating, and its purpose is to solve the problem of heat resistance and poor weather resistance of the core film of a solar heat collector in the past and are not suitable for high efficiency. Problems with roll-to-roll or sheet-step continuous production

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  • Solar collector core with silicon nitride medium selective absorption coating and preparation method

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specific Embodiment approach

[0025] The specific embodiment: the present invention will be further described below in conjunction with accompanying drawing:

[0026] The invention provides a core film of a flat solar heat collector with a silicon nitride dielectric selective absorption coating. The silicon nitride or silicon oxynitride dielectric film of the present invention is produced by magnetron reactive sputtering with MF intermediate frequency power supply and paired double cathode (plane or rotating target), and the silicon nitride or silicon oxynitride dielectric film has good thermal stability and weather resistance Excellent performance and high production efficiency.

[0027] Such as figure 1 As shown, the film system of the present invention includes a substrate 1, on which a highly infrared reflective conductive film 2 is disposed, and on the highly infrared reflective conductive film 2, a silicon nitride or silicon oxynitride dielectric film 3 is disposed. Among them, the substrate 1 is m...

Embodiment 1

[0034] ① Take the substrate 1, and use cathode magnetron sputtering to prepare a conductive film 2 with high infrared reflection on the substrate 1. The thickness of the conductive film 2 with high infrared reflection is 110nm, the working voltage is 450V, and the working current is 150A , the filling gas is argon or argon mixed with nitrogen, when the filling gas is argon mixed with nitrogen, the mass ratio between argon and nitrogen is 1:2, and the working pressure is 0.4Pa;

[0035]②. On the conductive film 2 with high infrared reflection, the silicon nitride dielectric film 3 is produced by two MF intermediate frequency power supplies and the paired dual-cathode magnetron reactive sputtering. The thickness of the prepared silicon nitride dielectric film 3 is 69 nm, the working voltage is 480V, the working current is 95A, the working pressure is 0.45Pa, the working gas is argon, and the reaction gas is nitrogen or nitrogen mixed with oxygen. The mass parts of the total amou...

Embodiment 2

[0042] ① Take the substrate 1, and use cathode magnetron sputtering to prepare a conductive film 2 with high infrared reflection on the substrate 1. The thickness of the conductive film 2 with high infrared reflection is 100nm, the working voltage is 440V, and the working current is 210A , the filling gas is argon or argon mixed with nitrogen, and the working pressure is 0.42Pa. When the filled gas is argon mixed with nitrogen, the ratio between argon and nitrogen is 1:1;

[0043] ②. On the conductive film 2 with high infrared reflection, a silicon nitride dielectric film 3 is produced by using 1 MF intermediate frequency power supply and paired dual-cathode magnetron reactive sputtering. The thickness of the prepared silicon nitride dielectric film 3 is 65 nm, the working voltage is 480V, the working current is 140A, the working pressure is 0.46Pa, the working gas is argon, and the reaction gas is nitrogen or nitrogen mixed with oxygen. The mass parts of the total amount are:...

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Abstract

The invention relates to a solar collector core with a silicon nitride medium selective absorption coating and a preparation method. The solar collector core with the silicon nitride medium selective absorption coating provided by the invention comprises a basal body, wherein a conductive film with high infrared reflection is arranged on the basal body; and a silicon nitride or silicon oxynitridemedium film is arranged on the conductive film with high infrared reflection. The coating disclosed by the invention is rational in structure. The preparation method has an ideal effect. The coating and the method are advantageous for being popularized and applied.

Description

technical field [0001] The invention belongs to the technical field of solar thermal utilization, and relates to the selection of film system materials and the design of film system structure in solar selective absorption coatings, in particular to a core film of a flat solar heat collector with a silicon nitride medium selective absorption coating and its preparation method. Background technique [0002] The existing core film system of flat solar heat collectors with solar selective absorption coating has poor weather resistance and heat resistance, or low production efficiency of continuous automatic assembly line. Most of the absorbing coatings for solar heat collection on the market are aluminum nitride, aluminum oxide, and silicon oxide dielectric coatings. The deposition by magnetron sputtering technology is either low in efficiency, poor in heat resistance, and poor in weather resistance, which is not very suitable. The use of flat-panel solar water heaters is not s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F24J2/46F24J2/50
CPCY02E10/40
Inventor 张浙军张旭
Owner 浙江优尼特新能源有限公司
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