A method for removing carbon impurities by silicon carbide micropowder
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- JIANGSU TAYAL PHOTOVOLTAIC AUXILIARY MATERIAL
- Publication Date
- 2011-12-21
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to the purification of silicon-containing compounds, in particular to a method for removing carbon impurities by silicon carbide micropowder. Background technique
[0002] The continuous exploitation and use of non-renewable energy such as coal and petroleum will be exhausted within decades. The development and research of new sustainable energy sources have received extensive attention. In this context, silicon solar photovoltaic technology has been flourishing. High-quality silicon wafers are the most critical components in photovoltaic conversion, and in the current silicon wafer processing, cutting silicon rods or silicon ingots into sheets of different diameters and thicknesses through special wire cutting equipment is currently a common way in the world . The cutting principle is to use thousands of steel wires with a diameter of 120-160μ as the cutting carrier, and use cutting fluids such as polyethylene glycol and propy...