Zinc oxide-based wide bandgap ceramic target and preparation method thereof

A zinc oxide-based, ceramic target material technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of expensive RF power supply and difficulty in large-scale use

Active Publication Date: 2012-01-11
山东中科泰阳光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For industrial applications, RF power is difficult to use on a large scale due to its high price.

Method used

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  • Zinc oxide-based wide bandgap ceramic target and preparation method thereof
  • Zinc oxide-based wide bandgap ceramic target and preparation method thereof
  • Zinc oxide-based wide bandgap ceramic target and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The zinc source and the oxygen source are mixed according to the molar ratio and undergo co-precipitation reaction, and then mixed, dried and ground to obtain a highly active and highly crystalline nano-ZnO precursor powder, and then the high-performance precursor powder is granulated, By means of isostatic pressing and other means of compression molding, the ceramic biscuit with high compacted density is prepared. Two upper and lower crucibles are used, graphite is sunk in the lower crucible, and the pressed ZnO ceramic green body placed in the upper crucible is inverted on the lower crucible. With a sintering temperature of 750°C, during the sintering process, the airtight space formed by the upper and lower crucibles is an oxygen-deficient environment, and graphite is easy to form reducing CO gas, thus causing the target to form an oxygen-deficient or Zn-rich state during the preparation process . After about 16 hours of sintering, the oxygen-deficient ZnO 0.9 Stru...

Embodiment 2

[0031] The zinc source and the oxygen source are mixed according to the molar ratio and undergo co-precipitation reaction, and then mixed, dried and ground to obtain a highly active and highly crystalline nano-ZnO precursor powder, and then the high-performance precursor powder is granulated, By means of isostatic pressing and other means of compression molding, the ceramic biscuit with high compacted density is prepared. Two upper and lower crucibles are used, graphite is sunk in the lower crucible, and the pressed ZnO ceramic green body placed in the upper crucible is inverted on the lower crucible. With a sintering temperature of 900°C, during the sintering process, the closed space formed by the upper and lower crucibles is an oxygen-deficient environment, and graphite is easy to form reducing CO gas, thus causing the target to form an oxygen-deficient or Zn-rich state during the preparation process . After about 2 hours of sintering, the oxygen-deficient ZnO 0.88 Struct...

Embodiment 3

[0033]The zinc source and the oxygen source are mixed according to the molar ratio and undergo co-precipitation reaction, and then mixed, dried and ground to obtain a highly active and highly crystalline nano-ZnO precursor powder, and then the high-performance precursor powder is granulated, By means of isostatic pressing and other means of compression molding, the ceramic biscuit with high compacted density is prepared. Two upper and lower crucibles are used, graphite is sunk in the lower crucible, and the pressed ZnO ceramic green body placed in the upper crucible is inverted on the lower crucible. Using a sintering temperature of 850°C, during the sintering process, the airtight space formed by the upper and lower crucibles is an oxygen-deficient environment, and graphite is easy to form reducing CO gas, thus causing the target to form an oxygen-deficient or Zn-rich state during the preparation process . After about 20 hours of sintering, the zinc-rich Zn 1.13 O structure...

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Abstract

The invention relates to a zinc oxide-based wide bandgap ceramic target and a preparation method thereof. The preparation method is characterized by comprising the following steps: preparing a ZnO nanometer powder with high sintering activity by adopting a liquid-phase coprecipitation method, and carrying out superhigh-compactness sintering by taking the nanometer powder as a raw material through a unique sintering process at the temperature of being not higher than 900 DEG C to obtain a high-compactness Zn-rich (or O2-inefficient) ZnO target. Based on the Zn-rich (or O2-inefficient) ZnO target, direct current magnetic control sputtering can be utilized to replace traditional radial frequency magnetic control sputtering to prepare a high-resistance ZnO-based transparent thin film, and the high-resistance ZnO-based transparent thin film can be widely applied to the field of transparent electronics and novel photoelectric devices, especially the diffusion barrier layers and the window layers of thin film solar cells. The high-performance ZnO-based ceramic target prepared by the invention has a simple preparation process, low cost, very high transmissivity and suitable resistivity, can be used as a target for preparing the high-performance high-resistance ZnO-based transparent thin film and has a broad application prospect in the field of solar cells and photoelectric devices.

Description

technical field [0001] The invention relates to a zinc oxide-based wide-bandgap ceramic target material and a preparation method thereof, belonging to the field of preparation of wide-bandgap conductive semiconductor materials. Background technique [0002] High-resistance transparent ZnO thin films have broad application prospects in the fields of transparent electronics and new optoelectronic devices. In thin-film solar cells and optoelectronic devices, ZnO thin films with controllable resistance and high transmittance within a certain range can be used as window layers and diffusion The barrier layer can significantly improve the uniformity and stability of thin film batteries. At present, there are many methods for preparing high-resistance transparent ZnO thin films: magnetron sputtering, pulsed light deposition (PLD), atomic layer epitaxy (ALE), metal organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE), etc. [(1) Y.J.Kim, C.H.Lee, et al.Appl.Phys.Lett.89...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08B22F3/16
Inventor 黄富强万冬云汪宙
Owner 山东中科泰阳光电科技有限公司
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