Insulated gate bipolar transistor (IGBT) with anti-latchup effect
A bipolar transistor and insulated gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the resistivity of the P-type base region, increasing the forward voltage drop of the device, and reducing the conductance modulation effect in the drift region. , to achieve the effect of improving current carrying capacity, avoiding latch-up effect, and large safe working area
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[0019] A latch-up resistant insulated gate bipolar transistor, such as figure 2 As shown, in the P-type base region 7 and N - A dielectric isolation layer 11 is provided at the interface between the drift regions 3 .
[0020] In the above scheme:
[0021] The material of the isolation dielectric layer 11 can be SiO 2 .
[0022] The isolation dielectric layer 11SiO 2 It can be formed by oxygen ion implantation and annealing. Select an N-type substrate FZ silicon wafer with a suitable resistivity crystal orientation according to the required withstand voltage, implant oxygen ions in a specific area, anneal to form the required dielectric layer, grow field oxygen, make the terminal part, and engrave the active area Etching and long gate oxide, depositing polysilicon gate, etching polysilicon gate, implanting P-type base region and annealing, implanting N-type source region and annealing, thick oxide layer, etching contact hole, implanting P+ body region, depositing front m...
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