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Unpolarized tunable guided-mode resonance filter system and method for measuring nanometer gap

A nano-gap and optical filter technology, which is applied to optical filters, measuring devices, optical devices, etc., can solve the problems of inability to detect nano-gap changes, measurement accuracy intensity changes, etc., and achieves simple structure, simplified requirements, easy to use build effect

Inactive Publication Date: 2012-02-29
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But when the nano-air gap is reduced to 100nm, the reflectance curve no longer changes significantly, so the change of the nano-gap cannot be detected]
And because what this technology detects is the change in the height of the reflection peak, its measurement accuracy will inevitably be affected by changes in the intensity of the light source signal, noise signals, etc.

Method used

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  • Unpolarized tunable guided-mode resonance filter system and method for measuring nanometer gap
  • Unpolarized tunable guided-mode resonance filter system and method for measuring nanometer gap
  • Unpolarized tunable guided-mode resonance filter system and method for measuring nanometer gap

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Embodiment 1

[0062] On the basis of the foregoing embodiments, the waveguide layer material is selected as titanium dioxide (TiO2) with a refractive index of 2.35, the grating layer material is silicon dioxide (SiO2) with a refractive index of 1.46, the grating period is 500 nm, and the grating fill factor is f = 0.5, the thickness of the grating layer is 40nm, the thickness of the air gap is zero, change the thickness of the two waveguide layers, and calculate the relationship between the resulting resonance peak wavelength position and the thickness of the waveguide layer, see the attached figure 2 shown. Then the thickness of the waveguide layer is selected as 145nm, the thickness of the two grating layers is changed, and the relationship between the resulting resonance peak wavelength position and the thickness of the grating layer is calculated, see the attached image 3 shown. Then select the thickness of the grating layer to be 40nm, change the thickness of the air gap, and calcul...

Embodiment 2

[0069] On the basis of the above embodiments, the material of the waveguide layer is zinc sulfide (ZnS) with a refractive index of 2.45, and the material of the grating layer is magnesium fluoride (MgF2) with a refractive index of 1.38. 2 ), the grating period is 1000nm, the grating fill factor is f = 0.5, the thickness of the grating layer is 80nm, and the thickness of the air gap is zero. Change the thickness of the two waveguide layers, and calculate the resulting relationship between the wavelength position of the resonance peak and the thickness of the waveguide layer relationship, see attached Figure 5 shown. Then, the thickness of the waveguide layer is selected as 200nm, the thickness of the two grating layers is changed, and the relationship between the resulting resonance peak wavelength position and the thickness of the grating layer is calculated, see the attached Image 6 shown. Then select the thickness of the grating layer to be 80nm, change the thickness of ...

Embodiment 3

[0072] On the basis of the above embodiments, the material of the waveguide layer is selected as zirconia (ZrO2) with a refractive index of 2.2. 2 ), the grating layer material is calcium fluoride (CaF 2 ), the grating period is 330nm, the grating fill factor is f = 0.5, the thickness of the grating layer is 26.4nm, and the thickness of the air gap is zero. Change the thickness of the two waveguide layers, and calculate the resulting resonance peak wavelength position and waveguide layer thickness relationship between, see attached Figure 8 shown. Then the thickness of the waveguide layer is selected as 119nm, the thickness of the two grating layers is changed, and the relationship between the wavelength position of the resonant peak and the thickness of the grating layer is calculated, see the attached Figure 9 shown. Then select the thickness of the grating layer to be 26.4nm, change the thickness of the air gap, and calculate the relationship between the resulting wave...

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Abstract

The invention relates to an unpolarized tunable guided-mode resonance filter system and a method for measuring a nanometer gap. The system is formed by parallelly placing two same guided-mode resonance filters in an opposite direction. The each guided-mode resonance filter is formed by a substrate layer, a waveguide layer and a grating layer. The guided-mode resonance filter system is an orthogonal double grating system. The grating layers of the two guided-mode resonance filters are parallel and opposite to each other. And stripes are mutually orthogonal. An air gap layer is arranged between the two grating layers. Through measuring the spacing of two split reflection peaks of a TE0 mode or a TM0 mode in a spectral region after incident light passes through the system, a size of the nanometer gap (<100nm) between the two gratings can be obtained. In the invention, an orthogonal double grating structure is adapted to any polarized incident light; separation of the two split reflection peaks of the TE0 mode and the two split reflection peaks of the TM0 mode can be realized; possible interference between the TE0 mode and the TM0 mode during measuring can be avoided.

Description

technical field [0001] The technology of the invention relates to guided wave optics and near-field optics, and has application prospects in the fields of nanometer gap measurement, spectrum measurement, and nanometer gap measurement research. Background technique [0002] The measurement of submicron / nano-gap is an extremely important issue in the development of industry and science and technology. Manufacture and positioning of high-precision templates in the semiconductor industry, monitoring of the flying height of hard disk heads in magnetic recording equipment, measurement of distance between head and disk in near-field optical storage, calibration of high-precision sensors, detection of microscopic deformation in MEMS devices, ultra-smooth surface roughness And flatness inspection, identification of standard gauge blocks, measurement of weak vibrations, and high-precision measurement of quantum physics, chemistry, molecular biology, etc. in scientific research, etc., ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20G01B11/14
Inventor 吴永刚伍和云吕刚王振华夏子奂刘仁臣
Owner TONGJI UNIV
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