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Thin film transistor, method for manufacturing the same, and device including the thin film transistor

A technology of thin-film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., and can solve the problems of carrier inflow, low mobility, and inability to obtain IGZO single-film field-effect mobility.

Active Publication Date: 2015-09-23
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] In Patent Document 2, since amorphous silicon whose mobility is about an order of magnitude lower than that of an oxide semiconductor is used in the carrier traveling layer as a quantum well portion, sufficient mobility cannot be obtained.
In addition, there is a problem that a good joint interface cannot be obtained by joining an IGZO film which is an oxide semiconductor to a dissimilar semiconductor material such as a-Si which is a non-oxide.
[0019] In Patent Document 3, as a method of increasing the on / off ratio without impairing the carrier concentration of the IGZO film used as the active layer, a method of inserting a resistance layer between the electrode layer and the active layer is proposed, but the method based on electron affinity is not considered. Therefore, there is a problem that the field-effect mobility exceeding the mobility of the conventional IGZO single film cannot be obtained because there is not enough carrier flow from the resistive layer to the active layer.

Method used

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  • Thin film transistor, method for manufacturing the same, and device including the thin film transistor
  • Thin film transistor, method for manufacturing the same, and device including the thin film transistor
  • Thin film transistor, method for manufacturing the same, and device including the thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0212] The mobilities of Examples 1, 2, and 3, and Comparative Examples 1 and 2 were compared for fabrication of bottom-gate thin-film transistors. Table 4 is a table showing Ga / (In+Ga) of each transistor, oxygen partial pressure / argon partial pressure and mobility during film formation.

[0213] [Table 4]

[0214]

[0215]

[0216] As Example 1, bottom-gate and top-gate thin film transistors were fabricated. As the substrate, SiO with 100nm formed on the surface is used 2 A p-type silicon substrate (manufactured by Mitsubishi Materials Corporation) doped with a high concentration of an oxide film. The oxide semiconductor layer is made of a material composed of IGZO. First, as the first region A 1 After sputtering a 5nm InGaZnO film with Ga / (In+Ga)=0.25 and Zn / (In+Ga)=0.5, the second region A 2 A 30 nm IGZO film of Ga / (In+Ga)=0.75 and Zn / (In+Ga)=0.5 was formed by sputtering. The oxide semiconductor layer is formed continuously between regions without being exposed to...

Embodiment 2

[0232] The element configuration is the same as in Example 1, and only the composition of the oxide semiconductor layer is different. First, as the first area A 1After sputtering a 5nm IGZO film with Ga / (In+Ga)=0.375 and Zn / (In+Ga)=0.5, the second region A 2 A 30 nm IGZO film of Ga / (In+Ga)=0.625 and Zn / (In+Ga)=0.5 was formed by sputtering. The oxide semiconductor layer is formed continuously between regions without being exposed to the atmosphere. The sputtering of each area is based on the use of In 2 o 3 Target, Ga 2 o 3 Target, ZnO target co-sputtering (co-sputter) carried out. The adjustment of the film thickness of each region is performed by adjusting the film formation time. The detailed sputtering conditions of each region are as follows.

[0233] (first area A 1 sputtering conditions)

[0234] Achieved vacuum degree: 6×10 -6 Pa

[0235] Film forming pressure: 4.4×10 -1 Pa

[0236] Film forming temperature: room temperature

[0237] Oxygen partial pressu...

Embodiment 3

[0246] The device configuration is the same as in Example 1, but the composition and oxygen concentration of the oxide semiconductor layer are different. First, as the first area A 1 After sputtering and forming a 5nm IGZO film with Ga / (In+Ga)=0.0 and Zn / (In+Ga)=0.5, the second region A 2 A 30 nm IGZO film of Ga / (In+Ga)=1.0 and Zn / (In+Ga)=0.5 was formed by sputtering. The oxide semiconductor layer is formed continuously between regions without being exposed to the atmosphere. The sputtering of each area is based on the use of In 2 o 3 Target, Ga 2 o 3 Target, ZnO target co-sputtering (co-sputter) carried out. The adjustment of the film thickness of each region is performed by adjusting the film formation time. The detailed sputtering conditions of each region are as follows.

[0247] (first area A 1 sputtering conditions)

[0248] Achieved vacuum degree: 6×10 -6 Pa

[0249] Film forming pressure: 4.4×10 -1 Pa

[0250] Film forming temperature: room temperature

...

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Abstract

PROBLEM TO BE SOLVED: To provide a thin film transistor which can be manufactured at low temperature and exhibits high electron field-effect mobility. SOLUTION: In the thin film transistor having an active layer which comprises an oxide semiconductor layer, the active layer includes a first area A<SB POS="POST">1< / SB>having a first electron affinity χ<SB POS="POST">1< / SB>in the film thickness direction from the gate electrode side, and a second area A<SB POS="POST">2< / SB>having a second electron affinity χ<SB POS="POST">2< / SB>smaller than the first electron affinity χ<SB POS="POST">1< / SB>. A well type potential where the first area A<SB POS="POST">1< / SB>is a well layer, and the second area A<SB POS="POST">2< / SB>and a gate insulating film are a barrier layer is constituted. Here, the active layer comprises the oxide semiconductor layer consisting of a(In<SB POS="POST">2< / SB>O<SB POS="POST">3< / SB>).b(Ga<SB POS="POST">2< / SB>O<SB POS="POST">3< / SB>).c(ZnO), and b / (a+b) of the second area A<SB POS="POST">2< / SB>is larger than b / (a+b) of the first area A<SB POS="POST">1< / SB>.

Description

technical field [0001] The present invention relates to a thin film transistor including an oxide semiconductor film and a method for manufacturing the same. In addition, the present invention also relates to devices such as a display device, an image sensor, and an X-ray digital photography device using the thin film transistor. Background technique [0002] In recent years, research and development of a thin film transistor using an In-Ga-Zn-O-based (IGZO) oxide semiconductor thin film for a channel layer has been vigorously conducted. The above-mentioned oxide thin film can be formed at low temperature, exhibits higher mobility than amorphous silicon, and is transparent under visible light, so a flexible transparent thin film transistor can be formed on a substrate such as a plastic plate or film. [0003] Table 1 shows a comparative table of mobility, processing temperature, etc. of various transistor characteristics. [0004] [Table 1] [0005] [0006] Although t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/26H01L21/363
CPCH01L21/02631H01L29/78618H01L29/7869H01L29/78696
Inventor 小野雅司高田真宏田中淳铃木真之
Owner SAMSUNG DISPLAY CO LTD