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Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target

A technology of a reflective electrode film and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of short circuit and the reduction of the qualification rate of organic EL components, and achieve high reflectivity, suppression of splashes, and suppression of abnormality. The effect of discharge

Active Publication Date: 2012-04-18
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, when sputtering a large target with high power input, a phenomenon called "sputtering" occurs due to abnormal discharge of the target, and molten particles adhere to the substrate to cause a short circuit between wiring or electrodes in some cases, thereby There is a problem of lowering the yield of organic EL elements

Method used

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  • Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target
  • Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target
  • Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0041] (Example 1) [Manufacture of silver alloy target]

[0042] As raw materials, Ag with a purity of 99.99% by mass or higher and In with a purity of 99.9% by mass or higher were prepared, and Ag and In were filled in a high-frequency vacuum melting furnace at a mass ratio shown in Table 1 as raw materials. The total mass when melted is about 300kg.

[0043] After evacuating the vacuum chamber, it was replaced with Ar gas, and after Ag was melted, In was added, and the molten alloy was cast in a graphite mold. The shrinkage cavity portion in the upper part of the ingot produced by casting was cut off, and an ingot (φ290×370 mm) of about 260 kg was obtained as a complete part.

[0044] After the obtained ingot was heated at 750-850°C for 1 hour, the forging direction was repeatedly turned 90° each time, relative to the casting direction z, any direction x of 90° relative to z, and 90° relative to z and x ° direction y in all directions, for forging. Make the single forging...

Embodiment 2～4、 comparative example 1～8）

[0061] Except for the component composition and manufacturing conditions described in Table 1, targets were produced in the same manner as in Example 1, and after obtaining silver alloy targets in Examples 2-4 and Comparative Examples 1-8, various evaluations were performed in the same manner as in Example 1. The results are shown in Table 1 and Table 2.

[0062] (existing example 1, 2)

[0063] The composition of In described in Table 1 was melted in the same manner as in Example 1, cast into a square graphite mold to produce an ingot of about 400×400×150 (mm), and the ingot was further heated at 600°C Hot rolling was performed after 1 hour, and the silver alloy target of Conventional Example 1 was produced. In addition, the cast ingot was hot-rolled in the same manner as in Conventional Example 1, and then heat-treated at 600° C. for 2 hours to produce a silver alloy target in Conventional Example 2. Various evaluations were performed in the same manner as in Example 1 usi...

reference example 1）

[0065] The mixing ratio of In recorded in Table 1 was melted with a charge weight of 7 kg, and the alloy melt was cast in a graphite mold to produce an ingot of φ80×110 (mm), and the obtained ingot was used for comparison with Comparative Example 3 The same number of times of upsetting, cold rolling reduction, heat treatment, to obtain a 220 × 220 × 11 (mm) plate. Various evaluations were performed in the same manner as in Examples and Comparative Examples. The results are shown in Table 1 and Table 2. However, since the target of Reference Example 1 was smaller in size than the targets produced in Examples and Comparative Examples, warpage after machining was not evaluated.

[0066]

[0067]

[0068]It can be seen from Table 1 that for Examples 1-4, the average grain size of the silver-indium alloy crystal grains is 160-360 μm, and the grain size deviation is good at 12-18%. On the other hand, in Comparative Example 3 in which the number of times of upsetting was 5, t...

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Abstract

Disclosed is a silver alloy target for forming a reflection electrode film for an organic EL element, which has a component composition containing 0.1-1.5 % by mass of In and the balance composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150-400 [mu]m, and the variance of the grain diameter of the crystal grains is 20% of the average grain diameter or less.

Description

technical field [0001] The present invention relates to a silver alloy target for forming a reflective electrode film of an organic EL element and a manufacturing method thereof. In more detail, it is related with the silver alloy target for reflective electrode film formation of a large organic electroluminescence element. Background technique [0002] Currently, as display devices, Brown tube (CRT), liquid crystal display (LCD), plasma display (PDP), light emitting diode (LED), and EL display are known, and they are widely used in computer monitors and back panels of liquid crystal displays. Wait. [0003] Among them, the organic EL element is a light-emitting element using the principle that a voltage is applied between an anode and a cathode formed on both sides of an organic EL light-emitting layer, and holes and electrons are injected into the organic EL from the anode and the cathode, respectively. In the organic EL light-emitting layer, holes and electrons combine ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06H01L51/50H05B33/10H05B33/26
CPCH05B33/24C23C14/14C23C14/3414H01L51/5218C22C5/06Y10T428/21H10K50/818C23C14/34C23C14/06H05B33/26
Inventor 小见山昌三伊藤郁夫
Owner MITSUBISHI MATERIALS CORP
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