Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-dielectric low-loss imitation grain boundary layer capacitor and preparation method thereof

A technology of grain boundary layer and capacitor, applied in the direction of fixed capacitor electrode, fixed capacitor dielectric, fixed capacitor components, etc., can solve the problem of increased dielectric loss, reduce dielectric loss, cheap and easy to obtain raw materials, and expand selection range effect

Inactive Publication Date: 2012-05-02
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a class of high dielectric, low loss imitation grain boundary layer capacitor and its preparation method, to overcome the dielectric loss increase of the existing grain boundary layer capacitor due to the high resistivity inside the semiconducting crystal grain. high disadvantage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-dielectric low-loss imitation grain boundary layer capacitor and preparation method thereof
  • High-dielectric low-loss imitation grain boundary layer capacitor and preparation method thereof
  • High-dielectric low-loss imitation grain boundary layer capacitor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Choose a diameter of 1μm SrTiO 3 Powder ( figure 2 a) As a dielectric insulating shell material and 10μm TiN powder ( figure 2 b) As a conductive unit material. Prepare 1% PEI aqueous solution and adjust its pH from 11 to 5 with dilute acid to promote complete ionization of PEI. Add 1 mmol of 10 μm TiN powder into 100 mL of the above PEI solution, ultrasonically disperse for 1 hour, reflux at 110° C. for 4 hours, vacuum filter, and wash repeatedly with deionized water. The obtained product (TiN / PEI powder) was dried at 120° C. for use. Add 1mmol, 5mmol, and 25mmol of STO powder into 100mL of water, and ultrasonically disperse for 1 hour. Three parts of 1mmol TiN / PEI powder were ultrasonically dispersed in 50mL deionized water, slowly added to the STO solution under stirring at room temperature, ultrasonicated for 2 hours, stirred and refluxed at 110°C for 4 hours, vacuum filtered, dried at 120°C, 200 mesh sieve. The resulting product (TiN / SrTiO 3 Composite powd...

Embodiment 2

[0047] Choose a diameter of 1.5μm BaTiO 3 The powder is used as the dielectric insulating shell material and the 20μm ZrN powder is used as the conductive unit material. Prepare a 2% CTAB aqueous solution, add 1 mmol ZrN powder to 100 mL of the above CTAB solution, ultrasonically disperse for 4 hours, reflux at 100°C for 8 hours, vacuum filter, and repeatedly wash with deionized water to remove excess CTAB. The obtained product (ZrN / CTAB powder) was dried at 100°C for use. 1mmol, 10mmol, 20mmol of BaTiO 3 The powder was added into 100mL of water and ultrasonically dispersed for 1 hour. Three parts of 1mmol ZrN / CTAB powder were ultrasonically dispersed in 100mL deionized water, slowly added to the BTO solution under stirring at room temperature, ultrasonicated for 4 hours, refluxed at 100°C for 4 hours, vacuum filtered, washed with water, dried at 120°C, 200 Mesh sieve. The resulting product (BaTiO 3 / ZrN powder) SPS sintering, heat preservation at 1200°C for 5 minutes, an...

Embodiment 3

[0049] Select diameter 600nm Pb(Mg 1 / 3 Nb 2 / 3 )O 3 The powder is used as the dielectric insulating shell material and the 15 μm NbN powder is used as the conductive unit material. Prepare a 1% DDAB aqueous solution, add 1 mmol NbN powder to 100 mL of the above DDAB solution, ultrasonically disperse for 2 hours, reflux at 110°C for 8 hours, vacuum filter, and repeatedly wash with deionized water to remove excess DDAB. The obtained product (NbN / DDAB powder) was dried at 110°C for use. 0.5mmol, 5mmol, 10mmol of Pb (Mg 1 / 3 Nb 2 / 3 )O 3 The powder was added into 100mL of water and ultrasonically dispersed for 2 hours. Three parts of 1mmol NbN / DDAB powder were ultrasonically dispersed in 50mL deionized water, and slowly added to Pb(Mg 1 / 3 Nb 2 / 3 )O 3 In the solution, it was ultrasonicated for 4 hours, refluxed at 110°C for 10 hours, vacuum filtered, dried at 110°C, and sieved through a 200-mesh sieve. The resulting product (Pb(Mg 1 / 3 Nb 2 / 3 )O 3 / NbN powder) SPS sinterin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a high dielectric low-loss imation grain boundary layer capacitor and a preparation method thereof. The capacitor is characterized in that a nuclear shell structure composite powder body which has a high-electric conduction nitride unit (nucleus) / a high-dielectric insulating layer structure (shell) replaces a material unit of a traditional grain boundary layer capacitor, and an SPS (spark plasma sintering) agglomeration technology is adopted to prepare a high-dielectric and low-loss imatation grain boundary layer capacitor; an imatation grain boundary layer capacitor material comprises SrTiO3 / TiN, BaTiO3 / ZrN, CaTiO3 / TiN, MgTiO3 / NbN, (Ba, Sr) TiO3 / TiN and Pb (Mg1 / 3Nb2 / 3)O3 / NbN and the like. The design idea of the capacitor provided by the invention breaks the disadvantage that the traditional grain boundary layer capacitor is only limited to a specific ceramic material such as SrTiO3 and BaTiO3 and the like, and the capacitor is popularized to a series of high-dielectric ceramic materials, thereby greatly expanding the household scale of the grain boundary layer capacitor.

Description

technical field [0001] The invention relates to a high-dielectric, low-loss pseudo-grain boundary layer capacitor and a preparation method thereof. The prepared pseudo-grain boundary layer capacitor is expected to be widely used in electronic components, ceramic capacitors, composite materials, and the like. It belongs to the technical field of ceramic capacitors. Background technique [0002] At present, the annual market capacity of electronic components in my country is about 35 billion U.S. dollars. Among them, ceramic capacitors have become contemporary electronic components due to their advantages such as high operating temperature, large specific capacity, good moisture resistance, small dielectric loss, and a wide range of temperature coefficients of capacitance. Indispensable components in the product. Nowadays, the increasing integration of electronic products requires the development of ceramic capacitors in the direction of high volume capacity and miniaturizatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/008H01G4/06H01G4/12
Inventor 王焱孙静靳喜海刘阳桥
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com