ZnO/CdSe/CdTe nanorod array photoelectrode and preparation method thereof

A nanorod array and photoelectrode technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of limited range of absorption spectrum, poor chemical and electrical stability, difficult control and repetition, etc., to reduce electronic recombination loss , high interface quality, improved light absorption efficiency and photoelectrochemical properties

Inactive Publication Date: 2012-05-02
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Firstly, the range of the absorption spectrum is limited; secondly, when the electrode is in contact with the electrolyte for a long time, it is ea...

Method used

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  • ZnO/CdSe/CdTe nanorod array photoelectrode and preparation method thereof
  • ZnO/CdSe/CdTe nanorod array photoelectrode and preparation method thereof
  • ZnO/CdSe/CdTe nanorod array photoelectrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0139] Embodiment 1: Preparation of ZnO / CdSe / CdTe nanorod array photoelectrode

[0140] The preparation steps are as follows:

[0141] A. Surface pretreatment of ITO conductive glass

[0142] The surface of ITO conductive glass is ultrasonically cleaned with deionized water, acetone, alcohol and deionized water for 15 minutes, then dried with a hair dryer, and immediately transferred to the radio frequency magnetron sputtering coating machine produced by Chengdu Qixing Vacuum Coating Technology Co., Ltd. , at a vacuum of 10 ～3 Protected under the condition of Pa;

[0143] B, preparation of ZnO buffer film layer

[0144] Put the clean ITO conductive glass obtained in step A) in the radio frequency magnetron sputtering coater, and use the ITO glass as the anode substrate to sputter the cathode ZnO target for 20 minutes under the conditions of heating temperature 200°C and vacuum degree 0.1Pa, and grow One layer of ZnO buffer film layer;

[0145] C, preparation of ZnO nanoro...

Embodiment 2

[0161] Embodiment 2: Preparation of ZnO / CdSe / CdTe nanorod array photoelectrode

[0162] The preparation steps are as follows:

[0163] A. Surface pretreatment of ITO conductive glass

[0164] The surface of the ITO conductive glass is ultrasonically cleaned with deionized water, acetone, alcohol and deionized water for 25 minutes, then dried with a hair dryer, and immediately transferred to the RF magnetron sputtering coating machine produced by Chengdu Qixing Vacuum Coating Technology Co., Ltd. , at a vacuum of 10 ～5 Protected under the condition of Pa;

[0165] B, preparation of ZnO buffer film layer

[0166] The clean ITO conductive glass obtained in step A) is placed in the radio frequency magnetron sputtering coating machine, the ITO glass is used as the anode substrate, and the cathode ZnO target is sputtered for 25 minutes at a heating temperature of 300° C. and a vacuum degree of 10 Pa to grow a Layer ZnO buffer film layer;

[0167] C, preparation of ZnO nanorod a...

Embodiment 3

[0182] Embodiment 3: Preparation of ZnO / CdSe / CdTe nanorod array photoelectrode

[0183] The preparation steps are as follows:

[0184] A. Surface pretreatment of ITO conductive glass

[0185] The surface of ITO conductive glass is ultrasonically cleaned with deionized water, acetone, alcohol and deionized water for 20 minutes, then dried with a hair dryer, and immediately transferred to the radio frequency magnetron sputtering coating machine produced by Chengdu Qixing Vacuum Coating Technology Co., Ltd. , at a vacuum of 10 ～4 Protected under the condition of Pa;

[0186] B, preparation of ZnO buffer film layer

[0187] Place the clean ITO conductive glass obtained in step A) in the radio frequency magnetron sputtering coater, and sputter for 30 minutes under the conditions of a heating temperature of 250° C. and a vacuum of 5 Pa to grow a ZnO buffer film layer;

[0188] C, preparation of ZnO nanorod array layer

[0189] In the same way as in Example 1

[0190] Weigh 0.0...

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Abstract

The invention relates to a ZnO/CdSe/CdTe nanorod array photoelectrode of a solar cell and a preparation method for the ZnO/CdSe/CdTe nanorod array photoelectrode. The ZnO/CdSe/CdTe nanorod array photoelectrode consists of an ITO conductive glass substrate, a ZnO buffer thin film layer, a ZnO nanorod array layer, a CdSe shell and a CdTe quantum dot layer from inside to outside. Due to a CdSe and CdTe sensitization technology, the saturated photo-current density of the ZnO/CdSe/CdTe nanorod array photoelectrode is increased to 14.3 mA/cm<2>. The preparation process is simple and feasible, low in cost and high in yield, and has an excellent market application prospect.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor nanometer materials. More specifically, the present invention relates to a ZnO / CdSe / CdTe nanorod array photoelectrode for solar cells, and also relates to a preparation method of the ZnO / CdSe / CdTe nanorod array photoelectrode. 【Background technique】 [0002] In recent years, due to the advantages of semiconductor quantum dots or nanocrystals with high absorption efficiency, adjustable band gap, high resistance to photodegradation, and multi-exciton generation effects, one-dimensional array electrodes can effectively reduce electron scattering and electron transport paths. To improve the electron diffusion length and light capture path, researchers gradually use quantum dots or nanocrystals to sensitize one-dimensional oxide nanoarray electrodes to prepare semiconductor-sensitized solar cells (SSSC for short). In the SSSC structure, since ZnO and TiO 2 The band gap is wide, the transmitta...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 王浩王甜王喜娜刘荣张军汪宝元胡芸霞
Owner HUBEI UNIV
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