ZnO/CdSe/CdTe nanorod array photoelectrode and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HUBEI UNIV
- Publication Date
- 2012-05-02
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
【Technical field】
[0001] The invention belongs to the technical field of semiconductor nanometer materials. More specifically, the present invention relates to a ZnO / CdSe / CdTe nanorod array photoelectrode for solar cells, and also relates to a preparation method of the ZnO / CdSe / CdTe nanorod array photoelectrode. 【Background technique】
[0002] In recent years, due to the advantages of semiconductor quantum dots or nanocrystals with high absorption efficiency, adjustable band gap, high resistance to photodegradation, and multi-exciton generation effects, one-dimensional array electrodes can effectively reduce electron scattering and electron transport paths. To improve the electron diffusion length and light capture path, researchers gradually use quantum dots or nanocrystals to sensitize one-dimensional oxide nanoarray electrodes to prepare semiconductor-sensitized solar cells (SSSC for short). In the SSSC structure, since ZnO and TiO 2 The band gap is wide, the transmitta...