Thin disk 515nm all-solid-state green laser

Abstract

The invention provides a thin disk 515nm all-solid-state green laser. The laser comprises a pumping source, a first spherical coupling mirror, an output coupling mirror, a second spherical coupling mirror, a gain medium and a heat sink, wherein the gain medium is welded on the heat sink via a welding layer; the rear surface of the gain medium and the concave surface of the output coupling mirror form a plano-concave resonant cavity; the output coupling mirror is arranged on the emergent light path of the gain medium; the pumping source, the first spherical coupling mirror and the second spherical coupling mirror form a four-pass pumped optical coupling system; the first spherical coupling mirror and the pumping source are arranged at the same side of the plano-concave resonant cavity; the first spherical coupling mirror is arranged on the path of the pumping light transmitted by the pumping source; and the second spherical coupling mirror is arranged on the path of the pumping light reflected by the gain medium. The miniaturized thin disk all-solid-state green laser can realize 515nm of wavelength and can replace the dye laser and argon ion laser.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor laser pumped solid-state lasers, and in particular relates to a thin-chip 515nm-band all-solid-state green laser capable of obtaining frequency-doubled output.

[0002] Background technique

[0003] The 515nm band laser has important applications in fields such as biochemistry, portable projectors, and medical treatment. Take dentistry as an example: can be used for photonic chemical bleaching and gum disinfection. Also, a 515 nm laser is an ideal pump source for pumping a Ti:Sapphire laser. In the past, dye lasers or argon ion lasers (514.5nm) were mostly used in related fields, but dye lasers have a series of problems such as poor safety, dye degradation and toxicity, high energy consumption, and poor stability, while argon ion lasers are bulky and consume high power consumption. A complex water-cooling system is required, so solid-state lasers of corresponding wavelengths are urgently ...

Examples

Embodiment 1

[0033] see figure 1 As shown, a thin-chip 515nm band all-solid-state green laser includes a pump source, a first spherical coupling mirror 3, an output coupling mirror 5, a second spherical coupling mirror 6, a gain medium 7, and a heat sink 9. The gain medium 7 is welded to the heat sink 9 through the welding layer 8;

[0034] The rear surface of the gain medium 7 and the concave surface of the output coupling mirror 5 form a plano-concave resonator, and the output coupling mirror 5 is located on the outgoing optical path of the gain medium 7;

[0035] The pumping source, the first spherical coupling mirror 3 and the second spherical coupling mirror 6 form a four-pass pumping optical coupling system, and the first spherical coupling mirror 3 and the pumping source are located on the plane On the same side of the concave resonator, the second spherical coupling mirror 6 is located on the other side of the symmetry of the first spherical coupling mirror 3, and the first spheri...

Embodiment 2

[0045] see figure 2 Shown is a schematic structural view of another embodiment of the thin-chip 515nm band all-solid-state green laser of the present invention. The structure of this embodiment is similar to that of Embodiment 1, except that a saturable absorber 10 is inserted in the cavity, and as the pump power increases, a fundamental frequency of 1030nm is generated in Yb-doped crystals such as laser gain medium Yb:YAG or Yb:LuAG Optical oscillation, when the fundamental frequency light passes through the saturable absorber 10, a 1030nm pulse laser is generated, and when the pulse laser 1030nm passes through the frequency doubling crystal 4 (KTP, LBO, BiBO, PPMgLN or other nonlinear crystals), due to the effect of nonlinear optical frequency doubling , so that 515nm pulsed laser output can be obtained.

Embodiment 3

[0047] see image 3 As shown, it is a structural schematic diagram of another embodiment of the thin-chip 515nm band all-solid-state green laser of the present invention. The structure of this embodiment is similar to the coupling structure and resonant cavity type of embodiment 1, except that a saturable absorber 10 is inserted into the cavity, and a 515nm laser pulse output is obtained by frequency doubling outside the cavity.

[0048] The film system of the output coupling mirror 5 needs to be adjusted. It is required to prepare a 1030nm partial reflection film on the concave surface of the output coupling mirror 5, with a reflectivity of 70-80%. %, when the pump light exceeds the oscillation threshold power of the resonator with a wavelength of 1030nm, 1030nm fundamental frequency light is generated in Yb-doped crystals such as laser gain medium Yb:YAG or Yb:LuAG, and 1030nm is at the welding end face of gain medium 7 and Oscillation propagates between the concave surface...

technical field

[0001] The invention belongs to the technical field of semiconductor laser pumped solid-state lasers, and in particular relates to a thin-chip 515nm-band all-solid-state green laser capable of obtaining frequency-doubled output.

[0002] Background technique

[0003] The 515nm band laser has important applications in fields such as biochemistry, portable projectors, and medical treatment. Take dentistry as an example: can be used for photonic chemical bleaching and gum disinfection. Also, a 515 nm laser is an ideal pump source for pumping a Ti:Sapphire laser. In the past, dye lasers or argon ion lasers (514.5nm) were mostly used in related fields, but dye lasers have a series of problems such as poor safety, dye degradation and toxicity, high energy consumption, and poor stability, while argon ion lasers are bulky and consume high power consumption. A complex water-cooling system is required, so solid-state lasers of corresponding wavelengths are urgently ...

Examples

Embodiment 1

[0033] see figure 1 As shown, a thin-chip 515nm band all-solid-state green laser includes a pump source, a first spherical coupling mirror 3, an output coupling mirror 5, a second spherical coupling mirror 6, a gain medium 7, and a heat sink 9. The gain medium 7 is welded to the heat sink 9 through the welding layer 8;

[0034] The rear surface of the gain medium 7 and the concave surface of the output coupling mirror 5 form a plano-concave resonator, and the output coupling mirror 5 is located on the outgoing optical path of the gain medium 7;

[0035] The pumping source, the first spherical coupling mirror 3 and the second spherical coupling mirror 6 form a four-pass pumping optical coupling system, and the first spherical coupling mirror 3 and the pumping source are located on the plane On the same side of the concave resonator, the second spherical coupling mirror 6 is located on the other side of the symmetry of the first spherical coupling mirror 3, and the first spheri...

Embodiment 2

[0045] see figure 2 Shown is a schematic structural view of another embodiment of the thin-chip 515nm band all-solid-state green laser of the present invention. The structure of this embodiment is similar to that of Embodiment 1, except that a saturable absorber 10 is inserted in the cavity, and as the pump power increases, a fundamental frequency of 1030nm is generated in Yb-doped crystals such as laser gain medium Yb:YAG or Yb:LuAG Optical oscillation, when the fundamental frequency light passes through the saturable absorber 10, a 1030nm pulse laser is generated, and when the pulse laser 1030nm passes through the frequency doubling crystal 4 (KTP, LBO, BiBO, PPMgLN or other nonlinear crystals), due to the effect of nonlinear optical frequency doubling , so that 515nm pulsed laser output can be obtained.

Embodiment 3

[0047] see image 3 As shown, it is a structural schematic diagram of another embodiment of the thin-chip 515nm band all-solid-state green laser of the present invention. The structure of this embodiment is similar to the coupling structure and resonant cavity type of embodiment 1, except that a saturable absorber 10 is inserted into the cavity, and a 515nm laser pulse output is obtained by frequency doubling outside the cavity.

[0048] The film system of the output coupling mirror 5 needs to be adjusted. It is required to prepare a 1030nm partial reflection film on the concave surface of the output coupling mirror 5, with a reflectivity of 70-80%. %, when the pump light exceeds the oscillation threshold power of the resonator with a wavelength of 1030nm, 1030nm fundamental frequency light is generated in Yb-doped crystals such as laser gain medium Yb:YAG or Yb:LuAG, and 1030nm is at the welding end face of gain medium 7 and Oscillation propagates between the concave surface...

Images