Thin disk 515nm all-solid-state green laser

A laser and all-solid-state technology, applied to the structure/shape of optical resonators, can solve the problems of complex optical structure, large volume, difficult installation and adjustment, etc., and achieve the effect of good output stability, small volume and simple structure

Inactive Publication Date: 2012-05-02
SUZHOU INST OF BIOMEDICAL ENG & TECH
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above experimental devices all have the disadvantages of complex optical structure, bulky volume, and difficult installation and adjustment, so it is difficult to develop commercial products with small volume and high laser output stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin disk 515nm all-solid-state green laser
  • Thin disk 515nm all-solid-state green laser
  • Thin disk 515nm all-solid-state green laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] see figure 1 As shown, a thin-chip 515nm band all-solid-state green laser includes a pump source, a first spherical coupling mirror 3, an output coupling mirror 5, a second spherical coupling mirror 6, a gain medium 7, and a heat sink 9. The gain medium 7 is welded to the heat sink 9 through the welding layer 8;

[0034] The rear surface of the gain medium 7 and the concave surface of the output coupling mirror 5 form a plano-concave resonator, and the output coupling mirror 5 is located on the outgoing optical path of the gain medium 7;

[0035] The pumping source, the first spherical coupling mirror 3 and the second spherical coupling mirror 6 form a four-pass pumping optical coupling system, and the first spherical coupling mirror 3 and the pumping source are located on the plane On the same side of the concave resonator, the second spherical coupling mirror 6 is located on the other side of the symmetry of the first spherical coupling mirror 3, and the first spheri...

Embodiment 2

[0045] see figure 2 Shown is a schematic structural view of another embodiment of the thin-chip 515nm band all-solid-state green laser of the present invention. The structure of this embodiment is similar to that of Embodiment 1, except that a saturable absorber 10 is inserted in the cavity, and as the pump power increases, a fundamental frequency of 1030nm is generated in Yb-doped crystals such as laser gain medium Yb:YAG or Yb:LuAG Optical oscillation, when the fundamental frequency light passes through the saturable absorber 10, a 1030nm pulse laser is generated, and when the pulse laser 1030nm passes through the frequency doubling crystal 4 (KTP, LBO, BiBO, PPMgLN or other nonlinear crystals), due to the effect of nonlinear optical frequency doubling , so that 515nm pulsed laser output can be obtained.

Embodiment 3

[0047] see image 3 As shown, it is a structural schematic diagram of another embodiment of the thin-chip 515nm band all-solid-state green laser of the present invention. The structure of this embodiment is similar to the coupling structure and resonant cavity type of embodiment 1, except that a saturable absorber 10 is inserted into the cavity, and a 515nm laser pulse output is obtained by frequency doubling outside the cavity.

[0048] The film system of the output coupling mirror 5 needs to be adjusted. It is required to prepare a 1030nm partial reflection film on the concave surface of the output coupling mirror 5, with a reflectivity of 70-80%. %, when the pump light exceeds the oscillation threshold power of the resonator with a wavelength of 1030nm, 1030nm fundamental frequency light is generated in Yb-doped crystals such as laser gain medium Yb:YAG or Yb:LuAG, and 1030nm is at the welding end face of gain medium 7 and Oscillation propagates between the concave surface...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a thin disk 515nm all-solid-state green laser. The laser comprises a pumping source, a first spherical coupling mirror, an output coupling mirror, a second spherical coupling mirror, a gain medium and a heat sink, wherein the gain medium is welded on the heat sink via a welding layer; the rear surface of the gain medium and the concave surface of the output coupling mirror form a plano-concave resonant cavity; the output coupling mirror is arranged on the emergent light path of the gain medium; the pumping source, the first spherical coupling mirror and the second spherical coupling mirror form a four-pass pumped optical coupling system; the first spherical coupling mirror and the pumping source are arranged at the same side of the plano-concave resonant cavity; the first spherical coupling mirror is arranged on the path of the pumping light transmitted by the pumping source; and the second spherical coupling mirror is arranged on the path of the pumping light reflected by the gain medium. The miniaturized thin disk all-solid-state green laser can realize 515nm of wavelength and can replace the dye laser and argon ion laser.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser pumped solid-state lasers, and in particular relates to a thin-chip 515nm-band all-solid-state green laser capable of obtaining frequency-doubled output. [0002] Background technique [0003] The 515nm band laser has important applications in fields such as biochemistry, portable projectors, and medical treatment. Take dentistry as an example: can be used for photonic chemical bleaching and gum disinfection. Also, a 515 nm laser is an ideal pump source for pumping a Ti:Sapphire laser. In the past, dye lasers or argon ion lasers (514.5nm) were mostly used in related fields, but dye lasers have a series of problems such as poor safety, dye degradation and toxicity, high energy consumption, and poor stability, while argon ion lasers are bulky and consume high power consumption. A complex water-cooling system is required, so solid-state lasers of corresponding wavelengths are urgently ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/08
Inventor 田玉冰檀慧明王帆崔锦江董宁宁施燕博能芬
Owner SUZHOU INST OF BIOMEDICAL ENG & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap