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Nano air-sensitive thin film and preparation method thereof

A thin-film and gas-sensing technology, applied in the direction of nanotechnology, material resistance, etc., can solve problems such as limited application, high price of long-period fiber gratings, and sensors that have not been widely used and verified, achieving wide application fields and good gas sensitivity Features, low cost effect

Inactive Publication Date: 2012-05-09
HISENSE VISUAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Long Period Fiber Bragg Grating (LPFG) has not been widely used and verified in the field of sensors due to its high price.
Moreover, this type of sensor also requires special writing and reading methods, which limits its application.

Method used

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  • Nano air-sensitive thin film and preparation method thereof
  • Nano air-sensitive thin film and preparation method thereof
  • Nano air-sensitive thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The preparation process of the Sn-doped ZnO nanometer gas-sensitive film of the present invention is as follows:

[0048] 1. Seed preparation:

[0049] The preparation of seeds requires the preparation of a matrix solution and a tin salt solution, respectively, and after mixing the two solutions, a seed layer is prepared.

[0050] (1) Zn(AC) 2 (Zinc acetate) 5.742g with C 3 H 7 NO (ethanolamine) 7.0848ml was added to 10mL (CH 3 ) 2 In CHOH (isopropanol), the matrix solution is obtained;

[0051] (2) SnCl 4 ·5H 2 O (tin tetrachloride) 0.4207g dissolved in 10mL CH 3 CH 2 In OH (absolute ethanol), get tin salt solution;

[0052] (3) mixing the matrix solution and the tin salt solution, and using a magnetic stirrer to fully stir to obtain a seed solution;

[0053] (4) place the cleaned glass substrate in the seed solution in a glue homogenizer, spin-coat at a speed of 7000 rev / min, and form a film;

[0054] (5) Then, gradient heat treatment is adopted, and the t...

Embodiment 2

[0066] The preparation process of the Sn-doped ZnO nanometer gas-sensitive film of the present invention is as follows:

[0067] 1. Seed preparation:

[0068] The preparation of seeds requires the preparation of a matrix solution and a tin salt solution, respectively, and after mixing the two solutions, a seed layer is prepared.

[0069] (1) Zn(AC) 2 (Zinc acetate) 1.914g with C 3 H 7 NO (ethanolamine) 7.0848ml was added to 10mL (CH 3 ) 2 In CHOH (isopropanol), the matrix solution is obtained;

[0070] (2) SnCl 4 ·5H 2 O (tin tetrachloride) 0.5609g dissolved in 10mL CH 3 CH 2 In OH (absolute ethanol), get tin salt solution;

[0071] (3) mixing the matrix solution and the tin salt solution, and using a magnetic stirrer to fully stir to obtain a seed solution;

[0072] (4) place the cleaned glass substrate in the seed solution in a glue homogenizer, spin-coat at a speed of 7000 rev / min, and form a film;

[0073] (5) then treated at 350°C for 15 minutes; then treated ...

Embodiment 3

[0081] The preparation process of the Sn-doped ZnO nanometer gas-sensitive film of the present invention is as follows:

[0082] 1. Seed preparation:

[0083] The preparation of seeds requires the preparation of a matrix solution and a tin salt solution, respectively, and after mixing the two solutions, a seed layer is prepared.

[0084] (1) Zn(AC) 2 (Zinc acetate) 1.914g with C 3 H 7 NO (ethanolamine) 7.0848ml was added to 10mL (CH 3 ) 2 In CHOH (isopropanol), the matrix solution is obtained;

[0085] (2) SnCl 4 ·5H 2 O (tin tetrachloride) 0.4207g dissolved in 10mL CH 3 CH 2 In OH (absolute ethanol), get tin salt solution;

[0086] (3) mixing the matrix solution and the tin salt solution, and using a magnetic stirrer to fully stir to obtain a seed solution;

[0087] (4) place the cleaned glass substrate in the seed solution in a glue homogenizer, spin-coat at a speed of 7000 rev / min, and form a film;

[0088] (5) then treated at 350°C for 10 minutes; then treated ...

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Abstract

The invention provides a nano air-sensitive thin film which is a Sn-doped ZnO nano rod thin film. The nano air-sensitive thin film is formed by doping a tin salt solution into a solution containing a zinc salt to form a seed layer and epitaxially growing the seed layer in a growth solution containing zinc nitrate, wherein the mol ratio of Sn<4+> ions to Zn<2+> ions in the seed layer is (0.01-0.08): 1. In the invention, a sol-gel method is used for preparing the Sn-doped ZnO nano rod thin film; the prepared ZnO nano rod thin film has a very strong air-sensitive property to reductive gas, can be prepared into a thin-film type gas sensor, has the advantages of small volume, stable structure, less material consumption, convenience for integration and the like, and has wide future application field; and because of having good air-sensitive property, the thin film is more applicable to reductive gas detection equipment; therefore, the requirements of miniaturization, low power and the like of modern sensors are met.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide nanometer gas-sensitive film, in particular to a method for preparing a Sn-doped ZnO nanometer film by a sol-gel method. Background technique [0002] Gas-sensitive materials are the core of reducing gas detection equipment. At present, gas detection equipment is expensive and bulky, which brings a lot of inconvenience to gas detection. Low-cost, small-volume reducing gas detection equipment has attracted great attention, and the nano-film material itself is small in size, easy to integrate, and has good film performance, which is especially suitable for gas detection equipment, which can not only greatly reduce the size of gas detection equipment It can also reduce the cost of testing equipment. The main preparation method of gas-sensing nano-films is to bombard high-energy particle beams or directly heat high-purity ZnO targets, so that they are ionized and deposited on low-temperature sub...

Claims

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Application Information

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IPC IPC(8): C03C17/23C04B41/50B82Y40/00G01N27/04
Inventor 李响宋志成
Owner HISENSE VISUAL TECH CO LTD
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