Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composite abrasive grain as well as preparation method and application thereof

A technology of composite abrasive grains and polymethacrylate, which is applied in the direction of polishing compositions containing abrasives, etc., and can solve problems such as the core-shell structure of composite abrasive grains is not ideal

Inactive Publication Date: 2012-06-13
CHENGDU TIMES LIVE SCI & TECH
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the above polymer / CeO 2 The core-shell structure of composite abrasive grains is not ideal, CeO 2 Nanoparticles are not uniformly coated on the surface of the inner core of polymer microspheres

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite abrasive grain as well as preparation method and application thereof
  • Composite abrasive grain as well as preparation method and application thereof
  • Composite abrasive grain as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1: the preparation of PS latex

[0031] Add distilled water, a certain amount of styrene (St), an appropriate amount of divinylbenzene and α-methacrylic acid into a 250mL four-neck flask equipped with a condenser, a mechanical stirring device and a nitrogen conduit in sequence, stir well and place at a constant temperature Heat the oil bath to a certain temperature, add the initiator potassium persulfate (dissolved in 10 mL distilled water) after 10 minutes, and obtain the PS latex particle dispersion after a period of reaction. figure 1 , figure 2 with image 3 The FESEM images and TEM photos of the PS latex particle dispersion are given respectively. It can be seen from the figure that the PS latex particles in the PS latex particle dispersion are in a regular spherical shape, with a single particle size of about 400nm, clear boundaries between particles, and monodisperse Good performance, uniform particle size distribution.

[0032] Since potassium per...

Embodiment 2

[0033] Embodiment 2: Preparation of polymethacrylate / cerium oxide composite particles

[0034] Measure 4 mL of PS latex dispersion liquid and add it to 200 mL distilled water, after ultrasonic dispersion for 10 min, add a certain amount of analytically pure cerous nitrate hexahydrate (Ce(NO 3 ) 3 ·6H 2 O) and excess hexamethylenetetramine (C 6 h 12 N 4 , HMT), and control the Ce(NO 3 ) 3 ·6H 2 The molar ratio of O and HMT is 1:5. The prepared reaction solution was kept at a constant temperature of 75°C for 2 hours under the condition of electromagnetic stirring. After cooling and standing still, the precipitate was centrifuged, washed twice with distilled water and once with absolute ethanol, and then placed in a blast drying oven at 80°C to Dry to get PS / CeO 2 Composite particles.

[0035] XRD analysis of raw material and product samples, such as Figure 4 Shown are the prepared PS microspheres, pure CeO 2 and PS-CeO 2 XRD spectra of composite microspheres F1-F3....

Embodiment 3

[0036] Embodiment 3: polishing test

[0037] Weigh a certain amount of PS / CeO 2 Composite abrasive grains were prepared into polishing slurry with 0.1mol L-1 Sodium hydroxide solution was used to adjust the pH value, and then an appropriate amount of sodium hexadecylbenzenesulfonate was added as a dispersant, and ultrasonically dispersed for 15 minutes before use. Under the polishing process parameters in Table 1, an IPEC 472 precision polishing machine was used to perform a polishing test on a thermally oxidized silicon wafer (the thickness of the oxide layer was about 1.1 μm). The model of the polishing pad is TWIBP-16 (produced by Thomaswest, USA).

[0038] Table 1 Polishing experiment process parameters

[0039]

[0040]

[0041] Measure the removal rate (in A) of the silicon dioxide wafer after polishing with the oxide measuring machine FT-750, the result is as follows Figure 5-1 to Figure 5-3 shown.

[0042] Figure 6-1 with Figure 7-1 Shown are the surface...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a composite abrasive grain which is prepared by utilizing a simpler preparation process and adopting an in-situ core formation method, is uniformly coated and takes polymethacrylate as a core and cerium oxide as a shell. By virtue of the unique mechanical characteristics of soft inside, hard outside and non-rigidity of the core-shell organic / inorganic composite abrasive grain, the synergy between the elasticity of the organic microsphere inner core and the surface hardness and high chemical activity of the CeO2 shell layer is fully exerted as expected during a CMP (chemical-mechanical polishing) process, thus high-quality ultra-smooth polished surfaces are obtained.

Description

technical field [0001] The invention relates to a composite abrasive grain used for ultra-precision polishing of semiconductor materials, more specifically, the invention relates to a composite abrasive grain with polymethacrylate as the core and cerium oxide as the shell. The invention also relates to the preparation method and application of the composite abrasive grain. Background technique [0002] CeO 2 It has high chemical activity and suitable hardness, especially for the chemical mechanical polishing of the silicon dioxide dielectric layer in the manufacture of VLSI, which has incomparable advantages over other abrasive grains. With the improvement of UISL integration, the feature size of the device has been reduced to submicron or even nanometer level, and CMP technology must be used for comprehensive planarization. While a single CeO 2 Abrasive particles are prone to particle pollution and various surface defects such as scratches and dents caused by large parti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08L25/08C08K3/22C08F212/08C08F212/36C08F220/06C09G1/02
Inventor 张莉娟
Owner CHENGDU TIMES LIVE SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com