Hydrated-structured SnO2 (stannic oxide)/IrO2 (iridium oxide) xH2O oxide film electrode material and preparation method for same

An oxide thin film, iro2 xh2o technology, applied in circuits, capacitors, electrical components, etc., can solve the problems of capacitance storage capacity attenuation, gap, and insufficient stability of capacitors, and achieve good capacitance performance and simple preparation methods.

Inactive Publication Date: 2012-06-20
QUANZHOU NORMAL UNIV
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Problems solved by technology

However, there is a serious disadvantage of hydrated ruthenium oxide: in a strong acid medium, as the number of charge and discharge cycles increases, ruthenium oxide will dissolve, resulting in insufficient continuous...

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  • Hydrated-structured SnO2 (stannic oxide)/IrO2 (iridium oxide) xH2O oxide film electrode material and preparation method for same

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Embodiment Construction

[0016] The following descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the patent scope of the present invention shall fall within the scope of the present invention.

[0017] The present embodiment selects tin tetrachloride and chloroiridic acid as metal precursors, and tin tetrachloride and chloroiridic acid are dissolved to a volume ratio of 1: 1 in ethanol-isopropanol mixed solvent, so that the amount of total metal ions is 0.4mol / L. Add the hydrochloric acid of 35ml in every liter of solution, object is to prevent the hydrolysis of metal ion, add the hydrogen peroxide of 30ml in addition, effect is to make iridium ion and tin ion in the solution keep in the high valence state, through fully stirring, form transparent precursor solution.

[0018] The above-mentioned precursor solution is painted on the surface of titanium with a brush, then dried and solidified under an infrared lamp, and th...

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Abstract

The invention discloses a hydrated-structured SnO2 (stannic oxide)/IrO2 (iridium oxide) xH2O oxide film electrode material, which comprises a substrate and a SnO2/IrO2 xH2O oxide film, wherein the SnO2/IrO2 xH2O oxide film is deposited on the surface of the substrate and is of a hydrated structure, the molar ratio of Sn (stannum) to Ir (iridium) of the oxide film is 30-70:70-30, and the x ranges from 0.2 to 3. The hydrated-structured SnO2/IrO2 xH2O oxide film electrode material can be used for preparing high-quality electrochemical capacitors. Additionally, the film electrode material is simple in preparation process, practical and suitable for industrial production and application.

Description

technical field [0001] The invention relates to an electrode material and a preparation method thereof, in particular to SnO with a hydrated structure 2 / IrO 2 ·xH 2 O oxide thin film electrode material and preparation of the hydrated structure SnO 2 / IrO 2 ·xH 2 Oxide thin film electrode material method. Background technique [0002] Supercapacitors have the advantages of high specific capacitance, high power density, and long cycle life, and have broad application prospects in consumer electronics, power facilities, hybrid vehicles, aerospace and other fields. The performance of supercapacitors mainly depends on the structure and composition of the electrode materials used. Transition metal oxide electrode materials with a hydrated structure are considered to be one of the best electrode materials for supercapacitors and have received extensive attention. Among transition metal oxides, ruthenium oxide has the most outstanding capacitive performance. For example, th...

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Application Information

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IPC IPC(8): H01G9/042
CPCY02E60/13
Inventor 吴允苗
Owner QUANZHOU NORMAL UNIV
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