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Method for preparing sub-pixel structured planar InGaAs infrared detector chip

An infrared detector and sub-pixel technology, applied in electrical components, semiconductor devices, final product manufacturing, etc., can solve problems such as difficulty in suppression, reduce surface recombination, reduce diffusion thermal damage, and improve response rate and detection rate Effect

Inactive Publication Date: 2012-07-04
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

However, the planar device has the phenomenon of photosensitive cell expansion, and it is difficult to suppress the crosstalk between the photosensitive cells of the line detector. Therefore, it is necessary to suppress the photosensitive cell expansion and crosstalk, further reduce the dark current of the device, and improve the detection rate of the device. new structure, new method

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  • Method for preparing sub-pixel structured planar InGaAs infrared detector chip
  • Method for preparing sub-pixel structured planar InGaAs infrared detector chip
  • Method for preparing sub-pixel structured planar InGaAs infrared detector chip

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Embodiment Construction

[0046] The specific implementation method of the present invention will be further described in detail below in conjunction with the drawings and embodiments.

[0047] as attached figure 2 As shown, the epitaxial wafer used in this embodiment adopts metal-organic chemical vapor deposition (MOCVD) technology with a thickness of 300 μm and a carrier concentration > 3×10 18 cm -3 An N-type InP layer 2 with a thickness of 0.5 μm is sequentially grown on the N-type InP substrate 1, and the carrier concentration is >2×10 18 cm -3 InGaAs intrinsic absorption layer 3 with a thickness of 2.5 μm and a carrier concentration of 5×10 16 cm -3 ; N-type InP capping layer 4 with a thickness of 1 μm and a carrier concentration of 5×10 16 cm -3 . This embodiment includes a total of 10 sub-pixel diffusion window areas 6, each with a size of 25×500 μm 2 , with a pitch of 15 μm.

[0048] The specific preparation process steps of the chip of this embodiment are as follows:

[0049] 1) Cle...

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Abstract

The invention discloses a method for preparing a sub-pixel structured planar InGaAs infrared detector chip, which comprises the following steps of: 1, extension material cleaning; 2, silicon nitride diffusion mask sedimentation; 3, first photoetching ; 4, sub-pixel diffuse window opening; 5, photoresist stripping; 6, closed pipe diffusion; 7, open-pipe piece taking; 8, second photoetching; 9, P electrode growing; 10, photoresist stripping; 11, silicon dioxide antireflection film sedimentation; 12, P electrode annealing; 13, third photoetching; 14, P electrode hole forming; 15, photoresist stripping; 16, fourth photoetching; 17, P electrode thickening; 18, photoresist stripping; 19, back side polishing; 20, N electrode growing; and 21, scribing. According to the invention, under the condition that the quantum efficiency of the prepared detector is not reduced, the photosensor can respond uniformly, the service life of the minority carrier is increased, and the dark current of the device is reduced; and due to the structure, as for a linear detector, the blind pixel rate can be effectively reduced, and the extension and cross talk of the photosensor are suppressed.

Description

technical field [0001] The method for preparing an infrared detector chip involved in the present invention specifically refers to a preparation process for a positively illuminated planar indium gallium arsenide (InGaAs) infrared detector chip. Background technique [0002] InGaAs short-wave infrared detectors can work at room temperature and have broad application prospects. At present, PIN InGaAs detectors are mainly divided into two types: planar type and mesa type. Due to the difficulty of passivation on the side of the mesa device, the reliability of the device is reduced and the dark current is large, which limits the improvement of the detection rate of the device to a large extent. As the mainstream structure of InGaAs detectors, planar detectors have the advantages of easy passivation, low dark current, and high reliability, and are very suitable for the field of aerial remote sensing. However, the planar device has the phenomenon of photosensitive element expans...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 邓洪海唐恒敬李淘李雪魏鹏朱耀明王云姬杨波龚海梅
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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