Antifeflective composition for photoresists
A photoresist, photoresist layer technology, used in anti-reflection coatings, optics, optomechanical equipment, etc.
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[0079] In J.A. Woollam VASE TM The refractive index (n) and absorption (k) values of the anti-reflection coating in the following example were measured on a 302 ellipsometer.
[0080] Polymer molecular weights were measured on a gel permeation chromatograph.
[0081] Synthesis Example 1
[0082] The dianhydride of 10g butane tetracarboxylic acid, 7g styrene glycol, 0.5g benzyltributylammonium chloride, and 50g propylene glycol monomethyl ether acetate (PGMEA) are packed into a flask, which has a condenser, Thermal controller and mechanical stirrer. The mixture was heated to 110°C under nitrogen with stirring. A clear solution was obtained after about 1-2 hours. The temperature was maintained at 110°C for 4 hours. Upon cooling, 30 g of PGMEA and 8.8 g of isopropyl glycidyl ether and 3.6 g of styrene oxide were mixed with the above solution. The reaction was maintained at 125°C for 24 hours. The reaction solution was cooled to room temperature and slowly poured into a ...
Embodiment 8
[0096] 1.0 g of the polymer solid of Synthesis Example 1 was dissolved in 30.0 g of PGMEA / PGME (70:30) to prepare a 3.3% by weight solution. 0.1 g of tetrakis(methoxymethyl) glycoluril (MX-270 obtained from Sanwa Chemicals, Hiratsuka, Japan), 0.1 g of a 10% solution of triethylamine dodecylbenzenesulfonate in ethyl lactate was added in the polymer solution. The mixture was then filtered through a microfilter with a 0.2 micron pore size. The solution was then coated on a silicon wafer and baked at 200°C for 90 seconds. The antireflection film was found to have an (n) value of 1.84 and a (k) value of 0.46 at 193 nm.
Embodiment 9
[0098] 1 g of the polymer solid of Synthesis Example 2 was dissolved in 30.0 g of a PGMEA / PGME (70:30) solvent to prepare a 3.3% by weight solution. 0.1 g of a 10% solution of dodecylbenzenesulfonate in ethyl lactate was added to the polymer solution. The mixture was then filtered through a microfilter with a 0.2 micron pore size. The solution was then coated on a silicon wafer and baked at 200°C for 90 seconds. The antireflection film was found to have an (n) value of 1.83 and a (k) value of 0.34 at 193 nm.
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