A cutting method of mesa silicon rectifier device

Abstract

The invention relates to a method for cutting a table facet silicon rectifying component. The method comprises the following steps: oxidizing a silicon wafer diffused by phosphorus boron, carrying out double surface lithography on the silicon wafer, corroding the silicon wafer by using a mixed acid to obtain a PN junction table facet, cleaning and carrying out glass passivation, removing an oxidation layer on the surface of the silicon wafer by using a sand blasting method, performing chemical nickel-plating on the silicon wafer, sintering, forming good ohmic contact on the surface of the silicon wafer, cutting the silicon wafer by using a laser cutting machine, putting the silicon wafer on a slide holder with the back surface of the silicon wafer facing downwards, aligning, starting equipment, cutting, and manually cracking the silicon wafer to form single crystals. The process can effectively overcome the defect of the occurrence of microcracks of glass passivated chips caused by using the traditional grinding wheel cutting method, thereby improving the performances of a semiconductor device, and particularly improving the stability, the reliability and the compressive strength of a high back-pressure device.

Description

Technical field [0001] The invention relates to a method for cutting a rectifier device, in particular to a method for cutting a mesa silicon rectifier device. Background technique [0002] The traditional diamond grinding wheel rotates at a high speed. The convex sharp serrated high-hardness diamond particles inlaid on the surface grind the cutting part, generating pressure, friction and shearing force to take away the peeled debris, and at the same time it also itself Being worn, the duller the blade, the higher the cutting temperature will cause the dicing knife to overload. Because these mechanical forces act directly on the surface of the wafer and produce stress and thermal damage inside the crystal, it is easy to cause chipping, micro-damage, cracks, etc. on both sides, and cause debris contamination (Silicondust) . The above problems are difficult to completely solve through the improvement of its own process. [0003] With the increase in device integration, the chip si...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a cutting method for mesa silicon rectifier devices, which overcomes the high-speed rotary cutting of the traditional diamond grinding wheel, which causes easy edge chipping, micro damage, and cracks on the front and back sides, and at the same time causes debris pollution and narrower cutting widths. major defects

Images