Preparation method for cuprous oxide micron/nano crystal with controllable morphology
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HARBIN INST OF TECH
- Publication Date
- 2012-07-18
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing cuprous oxide micro / nano crystals; in particular, it relates to a preparation method for shape-controllable cuprous oxide micro / nano crystals. Background technique
[0002] Cuprous oxide is a semiconductor material with a p-type direct bandgap. The forbidden band width is 1.9-2.2ev. Cuprous oxide semiconductor material can be excited under visible light (wavelength 400-800nm), and can be used in solar energy conversion, micro Electronics, magnetic storage, catalysis and gas sensing and other fields.
[0003] The preparation of cuprous oxide nanomaterials has always been one of the hot research areas. Cuprous oxide thin film materials also have good applications in solar energy conversion. For example, Yan Zipeng and others prepared p-type Cu by electrochemical method 2 O semiconductor thin film (Journal of Xi'an Jiaotong University, 2011, 45(3): 121-124), and in the study of direct conversion of solar ...